Quantum dot, preparation method thereof and application thereof

A technology of quantum dots and core-shell quantum dots, applied in the field of quantum dot materials, can solve the problems of low fluorescence efficiency and achieve high quantum yield, narrow half-peak width, and high crystal purity

Active Publication Date: 2018-08-17
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a quantum dot, its preparation method and its application, so as to solve the problems of the blue light quantum dots in the prior art with wide half-peak width and low fluorescence efficiency in the blue light region

Method used

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  • Quantum dot, preparation method thereof and application thereof
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  • Quantum dot, preparation method thereof and application thereof

Examples

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preparation example Construction

[0032] In a typical implementation of the present application, a method for preparing quantum dots is provided, the preparation method comprising: step S1, providing a mixed precursor of a zinc-containing precursor and a cadmium-containing precursor, wherein the mixed precursor contains zinc The molar ratio of cadmium is greater than or equal to 10; step S2, reacting the first sulfur precursor and the mixed precursor to obtain a CdS / ZnS core-shell quantum dot system; step S3, performing alloying treatment on the CdS / ZnS core-shell quantum dot system to obtain Contains Cd x Zn 1-x S quantum dot system; And step S4, to containing Cd x Zn 1-x Adding cadmium carboxylate and the second sulfur precursor to the S quantum dot system to grow the shell to obtain Cd x Zn 1-x S / Cd Y Zn 1-Y S core-shell quantum dots, where 0

[0033] The above preparation method first forms CdS / ZnS core-shell quantum dots, and then performs alloying treatment to form CdS / ZnS x Zn 1-x S...

Embodiment 1

[0057] Cd x Zn 1-x S / Cd Y Zn 1-Y Synthesis of S (mixed ligand, shell doped cadmium content is 12.5% ​​of the sulfur precursor used when coating) core-shell quantum dots: weigh CdO (0.0512g, 0.4mmol), dodecanoic acid (3.3g, 16mmol), basic zinc carbonate (0.66g, 1.2mmol), and 12mL ODE were mixed in a 100mL three-necked flask. After exhausting with an inert gas for 10 minutes, the temperature was raised to 280°C to obtain a clear solution (ie, the mixed precursor) . Cool the clear solution to 250°C, inject 3mL0.2mmol / mL (S-ODE) into it, and react for 5 minutes (that is, to obtain the CdS / ZnS core-shell quantum dot system); then add 6mmol oleic acid, and raise the temperature to 300°C, carry out the alloying reaction for 30 minutes, then add 1mL TBP, and react for 10 minutes to obtain a Cd-containing x Zn 1-x S nuclear quantum dot system. Cd x Zn 1-x S nuclear quantum dot system was added dropwise at a speed of 6mL / h 20mL 0.2mmol / mL S-TBP, 5mL oleic acid and 2.5mL 0.2mmol...

Embodiment 2

[0059] The difference from Example 1 is that the clear solution was cooled to 220°C, and 3mL of 0.2mmol / mL (S-ODE) was injected into it, and reacted for 20 minutes (that is, a CdS / ZnS core-shell quantum dot system was obtained).

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Abstract

The invention provides a quantum dot, a preparation method thereof and application thereof. The preparation method comprises the following steps: S1, providing a precursor mixture of a zinc-containingprecursor and a cadmium-containing precursor, wherein a molar ratio of zinc in the precursor mixture is greater than and equal to 10; S2, reacting first sulfur precursor with the precursor mixture toobtain a CdS / ZnS core-shell quantum dot system; S3, performing alloying treatment on the CdS / ZnS core-shell quantum dot system to obtain a quantum dot system containing Cd[x]Zn[1-x]S; and S4, addingcadmium carboxylate and a second sulfur precursor into the quantum dot system containing Cd[x]Zn[1-x]S to grow a shell layer, thereby obtaining a Cd[x]Zn[1-x]S / Cd[Y]Zn[1-Y]S core-shell quantum dot, wherein X is greater than 0 and smaller than 1, and Y is greater than 0 and smaller than 1. The Cd[x]Zn[1-x]S / Cd[Y]Zn[1-Y]S core-shell quantum dot obtained by the preparation method is relatively narrowin half-peak width in a blue-light area and is relatively high in fluorescence efficiency.

Description

technical field [0001] The invention relates to the field of quantum dot materials, in particular to a quantum dot, its preparation method and its application. Background technique [0002] Solution semiconductor nanocrystals (solution quantum dots) with sizes in the quantum confinement size range have received extensive attention in the fields of biological imaging and labeling, display, solar cells, light-emitting diodes, and single-photon sources due to their unique optical properties. And in the fields of biological labeling and imaging, light-emitting diodes, lasers, quantum dot photovoltaic devices, etc., quantum dot research has become one of the hot spots in their respective fields. In fields that affect people's daily life such as display (quantum dot backlight TV), lighting, etc., quantum dots have been initially applied in practice. [0003] As an emerging class of luminescent and optoelectronic materials, especially as a class of potential advantages for next-ge...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y40/00
CPCC09K11/02C09K11/883B82Y20/00B82Y40/00
Inventor 周健海乔培胜
Owner NANJING TECH CORP LTD
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