Quantum dot synthesis method

A synthesis method and quantum dot technology, applied in chemical instruments and methods, nanotechnology for materials and surface science, nanotechnology, etc., can solve the problem of low alloying degree of CdZnS transition layer, reduced luminous efficiency of quantum dots, semi- Increased peak width and other issues to achieve the effect of reducing internal defects, uniform growth of quantum dots, and narrow half-peak width

Active Publication Date: 2018-09-28
苏州一佳一生物科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, traditional zinc sources such as zinc oleate, zinc stearate, zinc myristate, zinc dodecanoate, zinc nonanoate, zinc chloride-oleylamine, etc., in the coating process, due to the interaction between Cd, Zn, and S The difference in activity between the CdZnS transition layer leads to a low degree of alloying and large lattice defects, which leads to a decrease in the luminous efficiency of quantum dots and a larger half-peak width

Method used

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  • Quantum dot synthesis method

Examples

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preparation example Construction

[0020] In some preferred embodiments, the preparation method of the zinc source comprises: reacting a mixed reaction system comprising short-chain fatty acid zinc, amine, phosphine source and solvent at 80-120° C. for 30 min-3 h.

[0021] Further, the zinc source concentration in the mixed reaction system is >0 and ≤2mmol / ml, preferably 1-2mmol / ml.

[0022] Further, the molar ratio of the phosphine source, short-chain fatty acid zinc and amine is 2:3:3˜1:8:32.

[0023] Further, the short-chain fatty acid zinc comprises zinc acetate (Zn(Ac) 2 ), zinc acetate dihydrate (Zn(Ac)·2H 2 O) and zinc propionate, etc., any one or a combination of two or more, preferably zinc acetate, zinc acetate dihydrate, but not limited thereto.

[0024] Further, the amines include any one or a combination of two or more of oleylamine, octadecylamine, cetylamine, tetradecylamine, dodecylamine, n-octylamine and trioctylamine, preferably oleylamine , but not limited to this.

[0025] Further, the p...

Embodiment 1

[0059] The zinc source preparation process used in the present embodiment is as follows:

[0060] Zinc acetate dihydrate 8.6g 40mmol Alpha reagent 97%

[0061] Oleylamine 40mmol Sigma Reagent 70%

[0062] Octadecene 80ml Alpha Reagent 90%

[0063] Put the above-mentioned raw materials in a 250ml three-necked flask, vacuumize and replace the argon three times, then raise the temperature to 100°C until there are no bubbles, insert the needle under the liquid surface and blow argon for 30min, and add 5ml of diphenylphosphine.

[0064] Preparation method of quantum dots

[0065] 1mlCd(OA) 2 , 10mlZn(OA) 2 Put 20ml of ODE in a 100ml three-neck flask, heat up to 120°C and evacuate until there are no bubbles. After obtaining a colorless transparent liquid, blow argon, heat up to 300°C, inject TOPSe 2M ​​0.2ml at 300°C, and then inject at 300°C Leave on for 30 minutes. Add Cd(OA) dropwise at 300°C 2 , Zinc source, TOPS, then cool down to end the reaction.

[0066] The optical ...

Embodiment 2

[0068] The zinc source preparation process used in the present embodiment is as follows:

[0069] Zinc acetate dihydrate 8.6g 40mmol Alpha reagent 97%

[0070] Octadecylamine 40mmol Sigma Reagent 70%

[0071] Put the above-mentioned raw materials in a 250ml three-necked flask, vacuumize and replace the argon three times, then raise the temperature to 100°C until there are no bubbles, insert the needle under the liquid surface and blow argon for 30min, and add 1ml of diphenylphosphine.

[0072] Preparation method of quantum dots

[0073] 1mlCd(OA) 2 , 10ml Zn(OA) 2 Put 20ml of ODE in a 100ml three-necked flask, heat up to 120°C and evacuate until there are no bubbles. After obtaining a colorless and transparent liquid, blow argon, heat up to 300°C, inject TOPSe 2M0.2ml at 300°C quickly, and then Leave on for 30 minutes. Add Cd(OA) dropwise at 300°C 2 , Zinc source, TOPS, then cool down to end the reaction.

[0074] The optical properties of the quantum dots obtained in t...

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Abstract

The invention discloses a quantum dot synthesis method. The synthesis method comprises the steps that a CdZnSe quantum dot serving as a nucleus is provided; a mixed reaction system containing the CdZnSe quantum dot, a cadmium source, a zinc source and a sulfur source reacts, and a CdZnS transition layer is formed on the CdZnSe quantum dot, wherein the zinc source comprises a precursor obtained byshort chain zinc fatty acid and amine which react under activation of a phosphine source. Accordingly, by means of the zinc source high in activity, the phenomenon that CdS is generated simply, so that the quantum dot efficiency is low can be avoided, the activity difference among Cd, Zn and S can be reduced, the quantum dot internal defects brought by the lattice parameter difference are reduced,and the quantum dot efficiency is improved. The obtained quantum dots are high in absorbance, high in luminous efficiency, uniform in size, good in monodispersion and narrow in half peak width.

Description

technical field [0001] The invention relates to a synthesis method of quantum dots, in particular to a method for synthesizing quantum dots with high efficiency and high light absorption by using an active zinc source to grow a CdZnS transition layer, and belongs to the technical field of nanomaterial preparation. Background technique [0002] In the application of quantum dot photoluminescence, a large number of quantum dots are usually required to absorb blue light, so as to obtain appropriate light effect or light intensity. Traditional applications will greatly increase the amount of quantum dots used and increase production costs. In addition, the use of a large number of quantum dots will make the luminescent layer of the product too thick, which will lead to serious self-absorption, resulting in a decrease in light efficiency or light intensity. In the end, the too thick quantum dot light-emitting layer also reduces the aesthetic performance of the end product, resul...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/56B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/565C09K11/883
Inventor 陈雨
Owner 苏州一佳一生物科技有限公司
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