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Substrate holder and method for growing monocrystalline diamond

A technology of microwave plasma and chemical vapor phase, applied in chemical instruments and methods, crystal growth, from chemically reactive gases, etc.

Inactive Publication Date: 2016-10-26
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the shortcomings of the existing substrate stage, the technical problem to be solved by the present invention is to provide a substrate stage and method for growing single crystal diamond by microwave plasma chemical vapor phase method

Method used

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  • Substrate holder and method for growing monocrystalline diamond
  • Substrate holder and method for growing monocrystalline diamond
  • Substrate holder and method for growing monocrystalline diamond

Examples

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Embodiment 1

[0026] Example 1. Growth of high-quality single crystal diamond using a newly designed grooved substrate stage

[0027] Step 1: During the implementation process, we designed a series of molybdenum substrate stages with series grooves (see figure 2 ). The grooves of any one of the substrate tables are formed by nesting inner grooves and outer grooves. The inner groove is a square structure with dimensions (a+0.2) mm x (a+0.2) mm, where a is the width of the diamond seed (in this example, 4 mm). The outer groove is a square structure with dimensions (a+0.4) mm x (a+0.4) mm. There is a step between the inner groove and the outer groove, the width of the step is 0.2 mm, and the height of the step (that is, the depth of the inner groove) is 0.5 mm smaller than the depth of the outer groove. The difference between different substrate stages in the whole series is that the total depth of their grooves is different, and the depth from the smallest to the largest is 0.5mm, 1.0mm, ...

Embodiment 2

[0033] Example 2. Growth using a common substrate platform (comparison).

[0034] The ordinary molybdenum substrate stage is used for growth, and the controlled growth conditions are exactly the same as the growth conditions of the new groove substrate stage (reaction chamber pressure, microwave power, seed crystal size used), that is, except that the sample stage is an ordinary molybdenum substrate stage In addition, the above-mentioned steps 2, 3 and 4 were also carried out. After about 24 hours of growth, it was found that the surface of the diamond single crystal was extremely uneven, and the growth rate around it was much higher than that in the middle. Due to the uneven surface temperature and the different deposition rates of C atoms , resulting in polycrystalline and some amorphous carbon at the edges (see Figure 4 ).

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Abstract

The invention relates to a substrate holder and a method for growing monocrystalline diamond and belongs to the field of crystal synthesis. The substrate holder is a molybdenum piece with a square groove formed in the smooth upper surface, the groove is in the shape of a step composed of an inner groove and an outer groove and is used for containing diamond seed crystals, depth of the groove is equal to thickness of the diamond seed crystals placed in, and depth of the outer groove is 0.5 mm. Effects of the groove on inhibiting excessively-fast growing and maintaining uniformity and flatness of a growing face are utilized, so that quality of the monocrystalline diamond grown artificially is improved remarkably. In the process of growing, shape and size of the groove need to be adjusted to enable growing speed of the whole growing face of the diamond to be uniform. The substrate holder has the advantages of simplicity in design and manufacture, wide using range and high quality of the diamond grown.

Description

technical field [0001] The invention relates to a substrate platform and a method for growing single crystal diamond by a microwave plasma chemical vapor phase method, belonging to the field of crystal synthesis. Background technique [0002] Microwave plasma chemical vapor (MPCVD) is a low-cost, high-quality, and easy-to-manipulate method for artificially preparing diamond. The basic principle is to use microwaves to excite plasma in a gas mixture of low-molecular hydrocarbon gas (such as methane) and hydrogen. In the high temperature environment of this plasma, carbon atoms will be deposited on the seed crystal placed on the substrate table, thus realizing the artificial growth of single crystal diamond. [0003] The structural design of the substrate table is an important factor affecting the quality of single crystal diamond growth. A commonly used common substrate stage is a molybdenum sheet of suitable size, on which a single crystal diamond seed crystal is placed to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/04C30B25/12
CPCC30B29/04C30B25/025C30B25/12
Inventor 贾俊基刘佳伟刘雄辉王耀光刘刚
Owner WUHAN UNIV
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