GaAs tunnel junction and preparation method thereof

Abstract

The invention provides a GaAs tunnel junction and a preparation method thereof. Excellent tunneling performance and a high peak current are achieved, the requirement for a high-power optically-focused multi-junction battery can be well met, and photoelectric conversion efficiency of the battery is promoted. The GaAs tunnel junction comprises a barrier layer, a first doped layer and a second doped layer, wherein the barrier layer, the first doped layer and the second doped layer are arranged on the surface of a GaAs substrate in sequence, and the GaAs substrate, the barrier layer and the first doped layer have the same conduction type. The GaAs tunnel junction is characterized in that if the first doped layer is in an n type and the first adulterant is Te, the second doped layer is in a p type, and the second adulterant is Mg; if the first doped layer is in a p type and the first adulterant is Mg, the second doped layer is in an n type, and the second adulterant is Te.

Description

technical field [0001] The invention relates to the field of semiconductor device structure and material growth, in particular to a GaAs tunnel junction and a preparation method thereof, and a multi-junction solar cell connected by the GaAs tunnel junction. Background technique [0002] In concentrating multi-junction solar cells, tunnel junctions must be used to realize the transport of photogenerated carriers between sub-cells. Under high concentration conditions, the photogenerated current will increase proportionally with the concentration ratio. Once the photogenerated current is greater than the peak current of the tunnel junction, the fill factor of the cell will decrease sharply, and the cell efficiency will decrease. Therefore, high-power concentrating multi-junction solar cells have an urgent requirement for high peak current of the tunnel junction, and the peak current of the tunnel junction is directly determined by the doping concentration and the diffusion stre...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a GaAs tunnel junction with a novel dopant combination, the GaAs tunnel junction has high doping concentration and high peak current density, thereby improving the conversion efficiency of concentrating multi-junction solar cells to overcome the traditional molecular The GaAs tunnel junction grown by beam epitaxy with Si and Be as doping sources has serious diffusion, and the peak current is too low to be suitable for high-power concentrating multi-junction cells.

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