32results about How to "Enhanced tunneling effect" patented technology

The invention discloses a method for preparing a tunneling crystal silicon solar cell. The method comprises the following steps of: depositing a layer of silicon dioxide nano particle film on the front surface of a cleaned and felted p-type crystal wafer and preparing an ITO (Indium Tin Oxide) film on the silicon dioxide nano particle film for being used as a front electrode; or depositing a layer of silicon dioxide nano particle film on the back surface of a cleaned and felted n-type crystal wafer and preparing a layer of ITO film on the surface of the silicon dioxide nano particle film for being used as a back electrode. Compared with the traditional method for preparing the crystal silicon solar cell, the method disclosed by the invention has the advantages of simplicity, easy operation, greatly simplifies the preparation process, reduces the preparation cost and has broad application prospect.

The invention belongs to the technical field of solar cells and relates to a contacting passivation crystalline silicon solar cell structure and preparation method. Double face polishing of an N or P type crystal silicon wafer is performed and then double face silicon oxide layer or aluminum oxide preparation is performed; than double face golden or silver nano particle preparation is performed; back face non-crystalline silicon N (P) type layer preparation is performed; light receiving face quasi crystalline state P (N) type silicon film preparation is performed; 70 nm thick ITO film and grid electrode is prepared on the P (N) type silicon film; and back face silver film preparation is performed. The invention has beneficial effects that metal nano particles wrapped by a passivation coating realizes an effect of a carrier tunneling channel, so that the carrier tunneling channel effect is improved, the fill factors of a crystalline silicon solar cell can be increased integrally and the surface plasma effect of the metal nano particles realizes an antireflection effect.

The invention provides a GaAs tunnel junction and a preparation method thereof. Excellent tunneling performance and a high peak current are achieved, the requirement for a high-power optically-focused multi-junction battery can be well met, and photoelectric conversion efficiency of the battery is promoted. The GaAs tunnel junction comprises a barrier layer, a first doped layer and a second doped layer, wherein the barrier layer, the first doped layer and the second doped layer are arranged on the surface of a GaAs substrate in sequence, and the GaAs substrate, the barrier layer and the first doped layer have the same conduction type. The GaAs tunnel junction is characterized in that if the first doped layer is in an n type and the first adulterant is Te, the second doped layer is in a p type, and the second adulterant is Mg; if the first doped layer is in a p type and the first adulterant is Mg, the second doped layer is in an n type, and the second adulterant is Te.

The present invention provides a non-volatile memory and a manufacturing method for the same. In the non-volatile memory, a floating gate structure has a first sharp portion and a second sharp portion, and a corner formed by a side surface of the floating gate structure and a part of a top surface of the floating gate structure is not covered by a control gate structure. The corner is connected between the first sharp portion and one end of the second sharp portion. A tunneling dielectric layer of an erasing gate structure covers the first sharp portion, the second sharp portion, and a tip part of the corner.

The invention provides a micro-LED epitaxial structure and a manufacturing method thereof, the micro-LED epitaxial structure comprises a substrate and also comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are arranged on the surface of the substrate, and the light-emitting layer comprises an electron deceleration layer, a superlattice active region and a hole aggregation layer. According to the structure, the epitaxial growth structure can be simplified, the light emitting efficiency of a micro-LED is improved, and the application of the micro-LED in the display field is promoted.

The invention discloses a novel heterojunction photoelectric device based on perovskite and a preparation method thereof. The photoelectric device comprises a semiconductor substrate and a hafnium dioxide layer located on the upper surface of the semiconductor substrate, a source electrode and a drain electrode are arranged on the upper surface of the hafnium dioxide layer, a perovskite film is arranged on the upper surface of the hafnium dioxide layer and located between the source electrode and the drain electrode, and a gate electrode is arranged on the lower surface of the semiconductor substrate. The photoelectric device disclosed by the invention has the advantages of small size, low cost, high performance, simplicity in manufacturing, high detection sensitivity and ultrahigh external quantum efficiency, and has great application potential in the field of photoelectric devices.

The invention discloses a p-GaN ohmic contact electrode and a preparation method and an application thereof. The p-GaN ohmic contact electrode comprises a p-GaN material layer which is provided with aheavily doped p-GaN layer. A bottom contact metal layer is formed on the heavily doped p-GaN layer. An upper cap metal layer is formed on the bottom contact metal layer. In the heavily doped p-GaN layer, the doping concentration of Mg is greater than or equal to 1*10<20>cm<-3>. The p-GaN ohmic contact electrode provided by the invention has the ohmic contact characteristic of low specific contactresistivity.

The invention discloses a cement soil wall inner inserting rigidity adjustable I-shaped prefabricated pile support structure. The cement soil wall inner inserting rigidity adjustable I-shaped prefabricated pile support structure comprises a cement soil wall for water stopping and rigidity adjustable I-shaped prefabricated piles arranged in the cement soil wall and used for stopping soil. A concrete crown beam is arranged at the top ends of the rigidity adjustable I-shaped prefabricated piles. The specific value of the short edge to the long edge of a pile body of each rigidity adjustable I-shaped prefabricated pile ranges from 0.55 to 0.6. The concrete strength grade of the rigidity adjustable I-shaped prefabricated piles ranges from C55 to C80. The adaptive stratum range of the cement soil wall is wide, discreteness is small, strength is high, up-down strength is uniform, and the water isolation performance is good. The support structure is easy to operate, and construction is convenient, fast and reliable. Meanwhile, the characteristics that the concrete strength grade of the rigidity adjustable I-shaped prefabricated piles is high, and the prestress can be adjusted according to the field are brought into full play, the purposes of shortening of the construction period and reducing the project manufacturing cost are achieved, accordingly, the usage amount of concrete and steel can be reduced, and the safety requirement can be met.

The invention provides a manufacturing method for a split-gate flash memory, and the method comprises the following steps: providing a semiconductor substrate, wherein a protective layer, a polycrystalline silicon material layer and a dielectric layer are sequentially formed on the semiconductor substrate; etching the dielectric layer to form a first trench; etching the polycrystalline silicon material layer in the first trench, so that the surface of the polycrystalline silicon material layer is in an arc shape; removing the remaining dielectric layer; forming a functional layer on the polycrystalline silicon material layer; etching the functional layer to form a second trench in the functional layer; and etching the polycrystalline silicon material layer in the second trench until the protective layer is exposed to form a floating gate layer, wherein a tip structure is formed at the vertex angle of the floating gate layer. The tip structure enables the electric field intensity to beimproved from the floating gate layer to a word line, so that electrons in the floating gate layer easily penetrate through the tunneling oxide layer from the tip structure to the word line through atunneling effect under an electric field with high intensity, thereby improving the tunneling effect, and improving the erasing efficiency.

The invention belongs to the technical field of full-face tunnel boring machine tool anomaly detection. The invention discloses a static detection test bed for abnormal vibration of a cutter of a full-face tunnel boring machine. The static detection test bed comprises a container body, a supporting door frame, a cutter box seat, a cutter conveying trolley, a protective cover, a warm air unit, a spraying unit, a control cabinet and a detection sensor, a lifting unit is arranged between the cutter box seat and the supporting door frame, and a vibration motor is arranged on the cutter box seat; the cutter conveying trolley is arranged in the container body in a walking mode, a cutter supporting tool is arranged on the cutter conveying trolley, and a crane is arranged on the side portion of the supporting door frame. The protective cover is arranged on the outer sides of the supporting door frame and the cutter box seat in a covering manner; and the detection sensor is used for acquiring detection data of the cutter. The invention further discloses a static detection method for abnormal vibration of the cutter of the full-face tunnel boring machine. The vibration detection signals of different abnormal damaged cutters are collected, accurate recognition of the cutters is facilitated, the tunneling performance of the tunneling machine is optimized, and the service life of the cutters is prolonged.

The invention discloses a PIN diode based on n-type gallium oxide and p-type diamond, which comprises an n +-Ga2O3 substrate layer, an n-Ga2O3 layer, a p + type diamond layer, a p + + type diamond layer, a cathode layer and an anode layer, and is characterized in that the cathode layer, the n +-Ga2O3 substrate layer, the n-Ga2O3 layer and the p + type diamond layer are sequentially arranged from bottom to top, the p + + type diamond layer is arranged on the upper surface of the p + type diamond layer, a plurality of grooves are formed in the p + + type diamond layer, and the anode layer covers the interiors of the grooves and the upper surface of the p + + type diamond layer; the doping concentration of the n-Ga2O3 layer is smaller than the doping concentration of the n +-Ga2O3 substrate layer, and the doping concentration of the p + + type diamond layer is larger than the doping concentration of the p + type diamond layer. According to the PIN diode structure based on the n-type gallium oxide and the p-type diamond, the voltage resistance of the PIN diode can be enhanced, the on resistance is reduced, the reverse leakage current is reduced, the heat conduction performance is improved, and the reliability of a device is improved.

The invention is suitable for the technical field of coal mining equipment, and provides a coal mine roadway angle adjusting type tunneling system. The tunneling system comprises a base, wherein a driving structure is arranged in the base, a buffer structure, an angle adjusting structure and a tunneling structure are sequentially arranged on the upper portion of the base, the angle adjusting structure comprises an angle adjusting plate, the angle adjusting end of the angle adjusting plate is movably connected with an arc-shaped groove of the auxiliary adjusting plate, a plurality of angle adjusting assemblies are arranged at the bottom of the angle adjusting plate, the tunneling structure comprises a supporting table, the supporting table is rotationally connected with a main rotating shaft, one end of the main rotating shaft is fixedly connected with a rotating seat, a plurality of branch rotating shafts are rotationally connected to the rotating seat, and the ends, away from the rotating seat, of the branch rotating shafts are provided with spiral blades. According to the tunneling system, tunneling operation at different heights can be conducted in the mine, the tunneling effectis good, meanwhile, the safety and stability of the tunneling system are high, and the service life of the tunneling system is prolonged.

The invention discloses a rotary excavating device. The rotary excavating device comprises a slicing mechanism and a conical rotary machine head cap, wherein a slurry inlet and outlet hole is formed in the side wall of the rotary machine head cap, a rotatable and telescopic connector is arranged at the tip end of the rotary machine head cap, the slicing mechanism comprises a rotary middle shaft and at least two strip-shaped slicing knives, one end of the rotating middle shaft is detachably connected with the connector, the other end of the rotating middle shaft is provided with a connecting part used for being connected with a drill rod, one end of each slicing knife is fixed to the rotating middle shaft, the other end of each slicing knife inclines towards the rotating machine head cap, and the slicing knives are distributed around the rotating middle shaft at intervals. The invention discloses a rotary excavating method. The rotary excavating method comprises the following steps that the rotary excavating device and a directional drilling machine are installed, the directional drilling machine works; connection is carried out; excavation construction is carried out; and a tube push bench retreats. According to the rotary excavating device and the rotary excavating method, a plastic drainage plate can be cut up, a pipe jacking machine tool bit is prevented from being stuck, and the construction cost is reduced.

The invention belongs to the field of solar cells in the photovoltaic industry and particularly relates to a P-type monocrystalline silicon battery front film coating structure and a preparation method thereof. The method comprises the steps of texturing, diffusion, etching, front SiO<2> layer deposition, back film coating, front masking, front doped P polycrystalline silicon (n-Si) deposition, front mask removal, front SiN<x> layer deposition, silk-screen printing and metallization. According to the prepared P-type monocrystalline silicon battery front film coating structure, a layer of dopedP polycrystalline silicon is added to a front electrode pattern, the doped polycrystalline silicon layer can achieve a good tunneling effect on a battery front in combination with a thin oxidized layer, and holes in a battery are prevented from migrating to the front surface; and a front metal electrode makes contact with the doped polycrystalline silicon layer, the problem that surface recombination is high due to direct contact between the metal electrode and a silicon substrate is avoided, Voc and Isc of the battery are improved, and therefore the conversion efficiency of the battery is effectively improved.

The invention relates to the technical field of roadway engineering, in particular to an underground roadway construction method suitable for double-shield tbm tunneling, which comprises the following steps of: firstly, circularly starting a hydraulic pump station, immediately rotating a cutter head after the stability is determined, adjusting the posture of a tunneling machine, slowly increasing a pressure knob of a thrust cylinder to a position suitable for normal cutting of the lithology, and starting tunneling; after the propelling displacement reaches the rated displacement, the propelling pressure is zeroed, then rotation of the cutterhead is stopped, step changing is prepared after the rotating speed of the cutterhead is zero, during step changing, the front shield stabilizer is stretched out, the supporting shoe is withdrawn, then the propelling oil cylinder retracts to pull the tight supporting shield to move forwards, and when the propelling displacement becomes the initial value, step changing is finished, and the next tunneling cycle is prepared to be started. By means of the structure, under the condition that the lithology of the TBM is soft and the shield supporting device cannot provide strong jacking force, additional jacking force is still provided for the whole equipment, it is ensured that the equipment can continue to advance under the condition that the lithology is slightly soft, and the working efficiency of the device is effectively improved.

The embodiment of the invention provides a solar cell and a manufacturing method thereof, a plurality of stacked sub-cells and a tunnel junction structure located between adjacent sub-cells are included, the tunnel junction structure comprises a first superlattice layer, a tunnel junction layer and a second superlattice layer which are stacked, the first superlattice layer and the second superlattice layer can restrain doping ions in the tunneling junction layer from diffusing into adjacent sub-cells, so that the doping concentration of the tunneling junction layer is prevented from being reduced, the characteristic of high doping of the tunneling junction layer is maintained, the tunneling effect of the tunneling junction layer is good, the tunneling current is large, and the large-current transportation requirement is met. Moreover, the first superlattice layer and the second superlattice layer can effectively inhibit the doping ions in the tunnel junction layer from diffusing into the adjacent sub-cells, and can also prevent the doping concentration of the tunnel junction layer from being reduced, thereby preventing the loss of the open-circuit voltage of the solar cell from being increased by the tunnel junction layer.