Light emitting diode and manufacturing method thereof
A technology of light-emitting diodes and light-emitting layers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of light-emitting efficiency drop, peak efficiency shift, etc., and achieve simplified structure layers, small stress, and reduced piezoelectric polarization effects Effect
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[0020] The specific implementation of the light-emitting diode (LED) and its manufacturing method provided by the present invention will be described in detail below in conjunction with the accompanying drawings.
[0021] attached figure 2 Shown is a schematic diagram of the structure of the LED described in this specific embodiment, including a self-supporting substrate layer, and an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer on the surface of the self-supporting substrate, wherein the light-emitting The layers include an electron spreading layer (ESL), a superlattice active zone (SL-SZ), and a hole enhancing layer (HEL).
[0022] In this specific embodiment, the self-supporting substrate is a GaN self-supporting substrate, which can be polar or non-polar. The n-type semiconductor layer, light-emitting layer, and p-type semiconductor layer are sequentially an n-type GaN layer, a light-emitting layer, and a p-type GaN layer, and the ...
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