42results about How to "Increases chance of radiative recombination" patented technology

The invention discloses a gallium nitride semiconductor light-emitting diode with a tilt quantum well structure. By means of an energy band engineering design, an InGaN quantum well is designed to be a tilt structure so as to modulate the forbidden band width of the well. According to the invention, a polarization electric field produced due to a polarization effect in the quantum well can be overcome so as to make the distribution of electrons and holes more uniform, and thus, the quantum efficiency of the light-emitting diode is increased.

The invention relates to an epitaxial growth method for improving the inner quantum efficiency of a GaN-based LED, belonging to the technical field of semiconductors. The method comprises the following steps of: alternately inputting ammonia gas as well as Group III metal organic source materials of gallium and indium in a growth reaction chamber in a pulsing way during the growth of an In-Ga-N quantum well layer of a GaN-based blue/green light LED active area; and forming a In-Ga-N quantum well luminous layer with high luminous efficiency in a modulation growth process under a set duration, a set interval and a set pulse period. The method can weaken an internally-built electric field of the In-Ga-N/GaN quantum well, improve the quantum localization effect, enhance the radiative recombination rate and increase the inner quantum efficiency of luminescence so as to improve the luminous efficiency and the brightness of the LED. The method is suitable for the MOCVD (Metallo Organic Chemical Vapor Deposition) epitaxial growth of a nitride-based blue/green light LED epitaxial material with high brightness and high luminous efficiency.

The invention discloses a light-emitting diode with a composite polar face electron blocking layer. The light-emitting diode comprises a substrate (101), a metal polar face n-type nitride layer (102), a metal polar face multiple quantum well layer (103), a metal polar face p-type nitride layer (104), a composite polar face p-type electron blocking layer (105) composed of a metal polar face p-type electron blocking layer (1051) and a nitrogen polar face p-type electron blocking layer (1052), a nitrogen polar face p-type nitride layer (106), an n electrode (7) arranged on the metal polar face n-type nitride layer and a p electrode (8) arranged on the nitrogen polar face p-type nitride layer, and the layers and the electrodes are arranged sequentially from bottom to top. A high electronic barrier is formed on a conduction band by the composite polar face electron blocking layer and blocks electrons from crossing a multiple quantum well active region to enter a p-type region, leakage currents can be reduced, and the probability of radiative recombination of the electrons and holes is improved.

The invention discloses luminescent glass and microcrystalline glass which are used for a white light-emitting diode (LED) and a preparation method for the luminescent glass and the microcrystalline glass. The luminous efficiency of rear earth ions can be improved by doping a certain amount of fluoride AF2 (A is Mg, Ca, Sr or Ba) into rear earth-doped strontium oxide-titanium oxide-silicon oxide (SrO-TiO2-SiO2) system glass, wherein the rare earth ions can be introduced in the form of oxide or fluoride. The luminescent glass is prepared by a high-temperature melting method, and is crystallized by a proper hot treating system to obtain the system microcrystalline glass. The luminescent glass and the microcrystalline glass are high in luminescent performance and stable in physical and chemical performance, can be mainly used in white LED devices for solving the problems of low color stability, high aging possibility of fluorescent powder and packing resin and the like of the conventional white LED, and can also be used in other related fields of lighting, displaying, light sources, detection and the like.

The invention discloses an InGaN quantum dot photoelectric device epitaxial wafer prepared through a substrate with an atom step. The InGaN quantum dot photoelectric device epitaxial wafer comprises the substrate with the atom step, an N-type layer grows on the substrate, the N-type layer has the same atom step as the substrate, an active area grows on the N-type layer, and a P-type layer is arranged on the active area. The atom step is a regular progressive-increasing type step, and the chamfer angle is larger than 0.05 degree and smaller than 10 degrees. Distribution of quantum dots is controlled through the atom step on the surface of the substrate, and through the utilization of changes of the chamfer angle formed by the atom step, InGaN quantum dot active areas of different widths and densities can be prepared to meet more requirements.

The invention provides a deep-ultraviolet light emitting diode capable of effectively improving external quantum efficiency and a method for preparing the deep-ultraviolet light emitting diode and relates to a light emitting diode. The deep-ultraviolet light emitting diode is provided with a substrate, wherein an aluminum nitride (AlN) buffer layer, a negative (n)-aluminum gallium nitride (AlGaN) layer, an active layer, a positive (p)-AlGaN layer and a p-gallium nitride (GaN) cover layer are sequentially grown on the substrate; an aluminum film layer is deposited on the p-GaN cover layer; an n-type electrode is arranged on the n-AlGaN layer; and a p-type electrode is arranged on the p-GaN cover layer. The invention has the advantages that: the AlN buffer layer, the n-AlGaN layer, the active layer, the p-AlGaN layer and the p-GaN cover layer are grown on the substrate; an n-type table surface is etched by using an inductively coupled plasma (ICP) technology, and p-type ohmic contact and n-type ohmic contact are respectively formed by etching, vacuum electron beam evaporation deposition and quick thermal annealing treatment technologies; the aluminum film layer is deposited on the p-GaN cover layer; and the n-type electrode is arranged on the n-AlGaN layer, and the p-type electrode is arranged on the p-GaN cover layer.

The invention belongs to the technical field of luminescent materials, and discloses a single-matrix double-band white light emitting material and a preparation method and application thereof. The chemical formula of the material is (C16H36N)CuI2, and the material can be especially applied to a white light LED. The chemical composition of the material is improved to obtain the (C16H36N)CuI2 material, the single-matrix double-band white light emission can be realized without the participation of rare earth elements, compared with the prior art, the variety of the single-matrix white light material can be effectively expanded, the emission spectrum covers the whole visible light region, the excitation spectrum covers 250-400nm at 400-850nm, and the PLQY is up to 54.3%.

The invention provides a micro-LED epitaxial structure and a manufacturing method thereof, the micro-LED epitaxial structure comprises a substrate and also comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are arranged on the surface of the substrate, and the light-emitting layer comprises an electron deceleration layer, a superlattice active region and a hole aggregation layer. According to the structure, the epitaxial growth structure can be simplified, the light emitting efficiency of a micro-LED is improved, and the application of the micro-LED in the display field is promoted.

The invention provides a light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light emitting diode epitaxial wafer comprises a substrate, and a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, a multi-quantum well layer and a P-type layer which are stacked on the substrate in sequence. Themulti-quantum well layer comprises a plurality of quantum well layers and quantum barrier layers which grow periodically and alternately, each quantum well layer comprises a first sub-layer and a second sub-layer growing on the first sub-layer, the first sub-layer is an InGaN layer, and the second sub-layer is a Si-doped InN layer. By doping Si into the second sub-layer, the enrichment of In in the quantum well layer is facilitated, so that the spontaneous radiation intensity in the quantum well layer is increased, and the effective energy band width is increased, and accordingly the drop effect can be reduced, and the light-emitting efficiency of the diode is improved.

The invention provides an LED epitaxy structure capable of improving GaN crystal quality, and relates to the technical field of LED epitaxy. The LED epitaxy structure sequentially comprises a patterned substrate, a GaN buffer layer, a U type GaN layer, an N type GaN layer, an InGaN well layer, a GaN barrier layer, an electron blocking layer and a P type GaN layer from bottom to top. The LED epitaxy structure is structurally characterized in that the U type GaN layer sequentially comprises a U1 type GaN layer and a U2 type GaN layer from bottom to top; and the U2 type GaN layer comprises 2D type GaN layers and 3D type GaN layers which grow alternately. Compared with the prior art, the LED epitaxy structure can effectively reduce spontaneous polarization and piezoelectric polarity, improves the probability of radiative recombination and therefore can achieve the purpose of enhancing luminous efficiency of an LED.

The invention discloses a zero-dimensional zinc-based halide luminescent material and a preparation method thereof, the zero-dimensional zinc-based halide luminescent material is a Cu < + > and B < 3 + > co-doped Cs3ZnCl5 material, Cu < + > and B < 3 + > are doped into Cs3ZnCl5 crystal lattices and replace Zn crystal lattice sites, the total doping amount is 1%-10% of the stoichiometric ratio of Zn in the Cs3ZnCl5 crystal structure, the doping concentration of Cu < + > is equal to that of B < 3 + >, and B is selected from any one of Al and Ga. The metal halide material is obtained by adopting a solvothermal method or a solid-phase reaction method, and can emit bright cyan light under the irradiation of ultraviolet light; the co-doping of Cu < + > and B < 3 + > not only inhibits the oxidation of Cu < + > due to a charge compensation effect, but also reduces the symmetry of a [CuCl4] < 3-> tetrahedron by triggering local lattice distortion, improves the radiative recombination probability of self-trapping excitons (STEs), and further improves the luminous efficiency of the material.

The invention which relates to the technical field of the LED epitaxial growth, discloses a GaN-based LED epitaxial structure comprising a substrate, a nucleating layer, an un-doped GaN layer, an n type GaN layer, a light emitting layer, an electronic blocking layer, and a p type GaN layer. The structure is characterized in that the electronic blocking layer is formed by a AlxGa1 xN layer, a multi-cycle GaN/InyGa1 yN superlattice structure layer, and a AlzGa1 zN layer, wherein the x is larger than 0 and is less than or equal to 0.8, the y is larger than 0 and is less than or equal to 0.2, and the z is larger than 0 and is less than or equal to 0.5. According to the invention, electronic leakage can be prevented effectively; radiative recombination of electrons and holes can be increased; the internal quantum efficiency of the LED and the light output efficiency can be improved; and the antistatic capacity of the LED can be enhanced.

The invention belongs to the field of semiconductor optoelectronic materials, and provides a quantum well green LED epitaxial structure with strain-reducing structure, comprising a sapphire substratelayer arranged from bottom to top, a GaN low-temperature nucleation layer, u-GaN layer, n-GaN lay, first strain reducing layer, InGaN/GaN quantum well active region, electron blocking layer and p-GaNlayer; The InGaN/GaN quantum well active region comprises a GaN barrier layer and a periodic structure located on the GaN barrier layer, wherein each period of the periodic structure comprises a second strain reduction layer, an InGaN quantum well layer, a third strain reduction layer and a GaN barrier layer from bottom to top; The first strain reduction layer is an InGaN monolayer or an InGaN/GaNsuperlattice, and the lattice constants of the second strain reduction layer and the third strain reduction layer are smaller than the InGaN quantum well layer and larger than the GaN barrier layer.The invention weakens the polarization effect in the active region of the green LED quantum well and improves the radiation recombination probability of electrons and holes. The defect density in theactive region of InGaN/GaN multiple quantum wells is reduced, which can be used in the green LED field.

The invention relates to the technical field of display, and provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode and a cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electron transport layer arranged between the quantum dot light-emitting layer and the cathode. Wherein the electron transport layer contains an electron transport material and an active material, and the active material is selected from at least one of organic hydrocarbon with at least one hydrogen atom substituted by carboxyl, organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and unsaturated ketone. The positive aging effect of the quantum dot light-emitting diode is improved by introducing the active material into the electron transport layer.

The invention discloses a preparation method of a blue light perovskite light-emitting diode. The preparation method comprises the following steps: preparing a passivating agent TMBBr, preparing a TMB2PbBr4 solution, synthesizing CsPbBr3 powder, preparing a quasi-two-dimensional blue light perovskite PEAxPA2-x (CsPbBr3) n-1PbBr4: TMBBr precursor solution, and preparing a three-dimensional mixed halogen perovskite light-emitting diode device. According to the invention, bis (trifluoromethylsulfonyl) imide sodium is used as an interface modification layer of nickel oxide (NiOx), and 4-(trifluoromethyl) benzamide hydrobromide is introduced into a quasi-two-dimensional perovskite precursor solution, so that the device has excellent spectral stability and better device performance.

The invention discloses a light emitting diode with a nitrogen polar surface n-type electron barrier layer. The light emitting diode comprises a substrate, a nitrogen polar nitride layer, a polarity reversal nitride layer, an n-type nitride ohmic contact layer, the n-type nitrogen polar surface electron barrier layer, a non-doped superlattice structure layer, a multi-quantum well active layer and a p-type nitride ohmic contact layer distributed from bottom to top in sequence; and an n-type electrode and a p-type electrode are respectively arranged on the n-type nitride ohmic contact layer and the p-type nitride ohmic contact layer. The nitrogen polar surface n-type electron blocking layer can limit spatially the number of electrons entering an active region; and since a traditional p-type doped electron barrier layer is removed, the injection rate of the holes can be increased, the number of the holes and the number of the electrons injected into the active region are kept at a balanced level, and the probability of electron and hole radiation recombination luminescence in the active region can be improved, so that the performance of the light emitting diode is improved.

The invention relates to the technical field of display, and provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode and a cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electronic function layer arranged between the quantum dot light-emitting layer and the cathode. The surface, adjacent to the cathode, of the electronic functional layer is treated by an active material, or an interface layer is arranged between the electronic functional layer and the cathode, and the material of the interface layer contains the active material. Wherein the active material is selected from at least one of organic hydrocarbon with at least one hydrogen atom substituted by carboxyl, organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and unsaturated ketone. According to the invention, the active material is introduced into the quantum dot light-emitting layer, so that the positive aging effect of the quantum dot light-emitting diode is improved.

The invention discloses a composite material and a preparation method thereof. The composite material comprises silicon quantum dots and one of an alkane group, an alkenyl-substituted alkyl group, a phenyl-substituted alkyl group and an amino-substituted alkyl group, which are combined on the surfaces of the silicon quantum dots. After the surfaces of the silicon quantum dots are hydrogenated or halogenated, Si on the surfaces is bonded with H or halogen atoms to form bonds, surface defects of the silicon quantum dots are passivated, and oxidation is prevented. Furthermore, the passivation effect can be further enhanced by reacting the silicon quantum dots of which the surfaces are bonded with hydrogen and the silicon quantum dots of which the surfaces are bonded with halogen atoms with acompound.