Deep-ultraviolet light emitting diode capable of effectively improving external quantum efficiency and method for preparing deep-ultraviolet light emitting diode

A technology of external quantum efficiency and light-emitting diodes, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of low external quantum efficiency, achieve high frontal light extraction efficiency, and enhance the effect of radiation recombination probability

Inactive Publication Date: 2012-07-04
XIAMEN UNIV
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  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a new type of deep ultraviolet light-emitting diode that can effectively improve the external quantum efficiency and its preparation method in view of the problems that the existing deep ultraviolet light-emitting diodes have low external quantum efficiency.

Method used

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  • Deep-ultraviolet light emitting diode capable of effectively improving external quantum efficiency and method for preparing deep-ultraviolet light emitting diode
  • Deep-ultraviolet light emitting diode capable of effectively improving external quantum efficiency and method for preparing deep-ultraviolet light emitting diode
  • Deep-ultraviolet light emitting diode capable of effectively improving external quantum efficiency and method for preparing deep-ultraviolet light emitting diode

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preparation example Construction

[0023] The preparation method of the deep ultraviolet light-emitting diode that effectively improves the external quantum efficiency comprises the following steps:

[0024] 1) growing an AlN buffer layer 2, an n-AlGaN layer 3, an active layer 4, a p-AlGaN layer 5 and a p-GaN capping layer 6 on a substrate 1;

[0025] 2) Use ICP technology to etch the n-type mesa, and form p-type and n-type ohmic contacts through photolithography, vacuum electron beam evaporation deposition and rapid thermal annealing treatment technology;

[0026] 3) Depositing an aluminum film layer 9 on the p-GaN capping layer 6;

[0027] 4) An n-type electrode 8 is provided on the n-AlGaN layer 3 , and a p-type electrode 7 is provided on the p-GaN capping layer 6 .

[0028] The thickness of the p-GaN cap layer 6 is controlled within 20nm, on the one hand, in order to effectively couple the surface plasmons at the interface with the dipoles in the quantum well, and on the other hand, to weaken the effect of...

Embodiment 1

[0045] Utilize photolithography technology, and then deposit ultra-thin aluminum film structure on the p-GaN cover layer by vacuum electron beam evaporation deposition technology. In the process of preparing the metal thin film, first, pre-program the thickness of the aluminum thin film to be deposited within 10nm, bombard the corresponding aluminum target with an electron gun, heat the material to evaporate and adsorb on the p-GaN capping layer, forming a continuous flat Metallic aluminum film.

Embodiment 2

[0047] Using photolithography technology, aluminum source is used as the target, and then a large number of target atoms are bombarded by magnetron sputtering to deposit a film on the p-GaN cap layer to form an ultra-thin aluminum film structure. The thickness of the aluminum film is Control within 10nm, and use highly integrated automation software for real-time monitoring.

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Abstract

The invention provides a deep-ultraviolet light emitting diode capable of effectively improving external quantum efficiency and a method for preparing the deep-ultraviolet light emitting diode and relates to a light emitting diode. The deep-ultraviolet light emitting diode is provided with a substrate, wherein an aluminum nitride (AlN) buffer layer, a negative (n)-aluminum gallium nitride (AlGaN) layer, an active layer, a positive (p)-AlGaN layer and a p-gallium nitride (GaN) cover layer are sequentially grown on the substrate; an aluminum film layer is deposited on the p-GaN cover layer; an n-type electrode is arranged on the n-AlGaN layer; and a p-type electrode is arranged on the p-GaN cover layer. The invention has the advantages that: the AlN buffer layer, the n-AlGaN layer, the active layer, the p-AlGaN layer and the p-GaN cover layer are grown on the substrate; an n-type table surface is etched by using an inductively coupled plasma (ICP) technology, and p-type ohmic contact and n-type ohmic contact are respectively formed by etching, vacuum electron beam evaporation deposition and quick thermal annealing treatment technologies; the aluminum film layer is deposited on the p-GaN cover layer; and the n-type electrode is arranged on the n-AlGaN layer, and the p-type electrode is arranged on the p-GaN cover layer.

Description

technical field [0001] The invention relates to a light emitting diode, in particular to a deep ultraviolet light emitting diode which can effectively improve the external quantum efficiency and a preparation method thereof. Background technique [0002] As a new type of high-efficiency solid-state light source, light-emitting diodes have significant advantages such as energy saving, environmental protection, and rich colors. Among them, deep ultraviolet light-emitting diodes (Deep Ultraviolet Light Emitting Diode, DUV-LED) with a wavelength between 220 and 350 nm are used in air purification, biomedical and other fields have a wide range of applications. However, due to the constraints of high film defect density, polarity mixing, and light absorption by electrodes, the light output power is seriously lost, which restricts the further improvement of the external quantum efficiency of DUV-LEDs. [0003] Surface Plasmon Polariton (SPP) is a localized electromagnetic wave mod...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/00
Inventor 康俊勇高娜黄凯李书平李金钗杨旭
Owner XIAMEN UNIV
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