A quantum well green LED epitaxial structure with strain reduction structure

Abstract

The invention belongs to the field of semiconductor optoelectronic materials, and provides a quantum well green LED epitaxial structure with strain-reducing structure, comprising a sapphire substratelayer arranged from bottom to top, a GaN low-temperature nucleation layer, u-GaN layer, n-GaN lay, first strain reducing layer, InGaN / GaN quantum well active region, electron blocking layer and p-GaNlayer; The InGaN / GaN quantum well active region comprises a GaN barrier layer and a periodic structure located on the GaN barrier layer, wherein each period of the periodic structure comprises a second strain reduction layer, an InGaN quantum well layer, a third strain reduction layer and a GaN barrier layer from bottom to top; The first strain reduction layer is an InGaN monolayer or an InGaN / GaNsuperlattice, and the lattice constants of the second strain reduction layer and the third strain reduction layer are smaller than the InGaN quantum well layer and larger than the GaN barrier layer.The invention weakens the polarization effect in the active region of the green LED quantum well and improves the radiation recombination probability of electrons and holes. The defect density in theactive region of InGaN / GaN multiple quantum wells is reduced, which can be used in the green LED field.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials, in particular to a quantum well green LED epitaxial structure with a strain-reducing structure. Background technique [0002] GaN-based LEDs are known as the fourth-generation lighting sources. They have the advantages of low energy consumption, long life, small size, and high brightness. They have gradually replaced traditional incandescent and fluorescent lamps and become the mainstream light source in the lighting market. [0003] There are two main types of mainstream white LED light sources in the market today: one is based on GaN-based blue LED chips, and the surface is coated with yellow phosphor powder, so that blue light and yellow light are mixed to form white light; the other is based on GaN-based blue LED chips. Violet LED chips are used as the basis, combined with red, green, and blue primary color (RGB) phosphors to achieve white light. Both methods have their ...

AI Technical Summary

Problems solved by technology

[0007] The present invention overcomes the deficiencies in the prior art, and the technical problem to be solved is: to provide a quantum well green LED epitaxial structure with a strain-reducing structure to solve the problem of low quantum efficiency in the green LED

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