Ultraviolet led epitaxial structure and its preparation method

An epitaxial structure, ultraviolet technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as degradation, low internal quantum efficiency, low light output power and efficiency, and achieve improved luminous efficiency, enhanced confinement, and enhanced radiation The effect of compounded chances

Active Publication Date: 2021-06-22
UNILUMIN GRP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the technical problem to be solved by the present invention is to provide a UV LED epitaxial structure and its preparation method to solve the problems of low internal quantum efficiency, low light output power and efficiency drop in existing UV LEDs

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  • Ultraviolet led epitaxial structure and its preparation method
  • Ultraviolet led epitaxial structure and its preparation method
  • Ultraviolet led epitaxial structure and its preparation method

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Embodiment 1

[0030] The first embodiment of the present invention provides an ultraviolet LED epitaxial structure, such as figure 1 As shown, it includes from bottom to top: substrate, buffer layer, N-type AlGaN layer, multi-quantum well light-emitting layer, electron blocking layer, P-type AlGaN layer and P-type GaN layer; figure 2 As shown, each quantum barrier layer in the multi-quantum well light-emitting layer includes a plurality of sublayers, preferably the number of sublayers is an odd number; the thickness of the sublayers and the content of aluminum molecules increase first according to the growth direction from bottom to top Post-decrement, increment and decrement boundary layers are located in the middle sublayers of each quantum barrier layer. The multi-quantum well light-emitting layer includes a plurality of quantum barrier layers, and the aluminum composition of the intermediate sublayers of the plurality of quantum barrier layers gradually increases from bottom to top acc...

Embodiment 2

[0034] The second embodiment of the present invention provides a method for preparing an ultraviolet LED epitaxial structure, including:

[0035] The sapphire substrate is placed in a metal organic compound chemical vapor deposition epitaxy reaction chamber, a hydrogen environment is set at a temperature of 1280°C, and the substrate is baked for 5 minutes;

[0036] A hydrogen environment is set at a temperature of 950-1200°C, and a buffer layer is grown on the substrate;

[0037] A hydrogen environment is set at a temperature of 1000°C-1200°C, and an N-type AlGaN layer is grown on the buffer layer;

[0038] A nitrogen environment is set at a temperature of 900-1000° C., and a multi-quantum well layer is grown on the N-type aluminum gallium nitride layer, and each quantum barrier layer in the multi-quantum well light-emitting layer includes a plurality of sublayers, and the sublayers are The thickness and the content of aluminum molecules increase first and then decrease accor...

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Abstract

The invention discloses an ultraviolet LED epitaxial structure and a preparation method thereof, belonging to the technical field of epitaxial growth of nitride semiconductor light-emitting devices, comprising: a substrate, a buffer layer, an N-type aluminum gallium nitrogen layer, a multi-quantum well light-emitting layer, and an electron barrier Layer, P-type aluminum gallium nitride layer and P-type gallium nitride layer; each quantum barrier layer in the multi-quantum well light-emitting layer includes multiple sub-layers, and the thickness of the sub-layers and the content of aluminum molecules grow according to the bottom-up growth The direction increases first and then decreases, and the increasing and decreasing boundary layer is the middle sublayer of each quantum barrier layer. The invention improves the internal quantum efficiency and light output power of the AlGaN-based ultraviolet LED.

Description

technical field [0001] The invention relates to the epitaxial growth of a nitride semiconductor light-emitting device, in particular to an ultraviolet LED epitaxial structure and a preparation method thereof. Background technique [0002] With the application and development of GaN-based blue LEDs, researchers have found that purple LEDs have broad application value in lighting, biomedicine, anti-counterfeiting identification, air and water purification, biochemical detection, and high-density information storage. Compared with the existing ultraviolet mercury lamp, it has the advantages of small size, low energy consumption, long life, environmental protection and non-toxicity. Therefore, UV LEDs are likely to completely replace traditional UV light sources in the future. [0003] At present, the materials for making ultraviolet LEDs are mainly AlGaN materials. However, due to the difficulty in obtaining high-quality AlGaN materials and the strong polarization effect betwe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/00H01L33/06H01L33/32
Inventor 李光郑悠赵平林廖加成白耀平
Owner UNILUMIN GRP
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