A light emitting diode with a nitrogen polar face n-type electron blocking layer

A technology of electron blocking layer and light-emitting diode, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of radiation recombination efficiency and luminous efficiency reduction, reduction of carrier radiation recombination efficiency, heterojunction interface energy band bending, etc. , to achieve the effect of reducing the two-dimensional electron gas density, increasing the probability of radiative recombination, and increasing the effective potential barrier
CN113257968BActive Publication Date: 2022-07-01SOUTHEAST UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SOUTHEAST UNIV
Publication Date
2022-07-01

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Abstract

The invention discloses a light emitting diode with a nitrogen polar surface n-type electron blocking layer, which comprises a substrate, a nitrogen polar nitride layer, a polarity inversion nitride layer, and an n-type nitride ohmic contact layer in order from bottom to top , n-type nitrogen polar surface electron blocking layer, non-doped superlattice structure layer, multiple quantum well active layer, p-type nitride ohmic contact layer. An n-type electrode and a p-type electrode are respectively provided on the n-type nitride ohmic contact layer and the p-type nitride ohmic contact layer. The n-type electron blocking layer with nitrogen polar face provided by the present invention can spatially limit the number of electrons entering the active region, and because the traditional p-type doped electron blocking layer is removed, it can increase the amount of electrons entering the active region. The injection rate of holes keeps the number of holes and electrons injected into the active region at a balanced level, which can improve the probability of electrons and holes in the active region radiating recombination light, thereby improving the performance of the light-emitting diode.
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Description

technical field

[0001] The invention provides a light emitting diode (LED) with a nitrogen polar plane n-type electron blocking layer, which belongs to the technical field of semiconductor optoelectronic materials and device manufacturing. Background technique

[0002] Because LED has the advantages of high efficiency, energy saving, high reliability and long life, and has great advantages over traditional lighting sources in terms of energy saving, emission reduction and environmental protection, it has gradually replaced traditional lighting methods such as fluorescent lamps and incandescent lamps. . However, research shows that if figure 2 As shown, under the condition of high current injection, the internal quantum efficiency of LED decreases rapidly, and electrons can easily overcome the limitation of quantum wells to reach the p region for non-radiative recombination with holes. The main factors seriously restrict the application and development of LED. Therefore, r...

Claims

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