GaN-based LED epitaxial structure

An epitaxial structure and structural layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of electron leakage, low effective radiation recombination rate of electron holes, insufficient electron blocking ability, etc., to improve luminous efficiency, enhance The probability of radiative recombination of electrons and holes in the light-emitting area and the effect of good ESD resistance

Active Publication Date: 2015-12-09
SOUTH CHINA NORMAL UNIVERSITY
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Problems solved by technology

Since the traditional LED structure only uses a single AlGaN electron blocking layer, the blocking ability for electrons is insufficient, resulting in significant electron leakage, resulting in a low effective radiative recombination rate of electron holes inside the LED device, resulting in low quantum efficiency and light emission in the LED. The output efficiency is not high

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  • GaN-based LED epitaxial structure
  • GaN-based LED epitaxial structure
  • GaN-based LED epitaxial structure

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Embodiment Construction

[0014] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings, but the embodiments of the present invention are not limited thereto.

[0015] In this embodiment, the GaN-based LED epitaxial structure is made of sapphire (Al 2 o 3 ) on the substrate first grow a layer of GaN material nucleation layer with a thickness of 25nm, then grow an undoped GaN layer with a thickness of 1um on the surface of the nucleation layer, and then grow an n-type GaN layer (with a thickness of 2um, The concentration is 5×10 18 cm -3 ), 6 cycles In 0.15 Ga 0.85 N / GaN multi-quantum well light-emitting layer (In 0.15 Ga 0.85 N and GaN thicknesses are 2.5nm and 10nm, respectively), electronic barrier layer (as an example, Al x Ga 1-x The x of N is 0.15, In y Ga 1-y y in N is 0.03, Al z Ga 1-z The z in the N layer is 0.15, the thickness of each layer is 1nm, GaN / In y Ga 1-y The period number of the N superlattice stru...

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Abstract

The invention which relates to the technical field of the LED epitaxial growth, discloses a GaN-based LED epitaxial structure comprising a substrate, a nucleating layer, an un-doped GaN layer, an n type GaN layer, a light emitting layer, an electronic blocking layer, and a p type GaN layer. The structure is characterized in that the electronic blocking layer is formed by a AlxGa1 xN layer, a multi-cycle GaN/InyGa1 yN superlattice structure layer, and a AlzGa1 zN layer, wherein the x is larger than 0 and is less than or equal to 0.8, the y is larger than 0 and is less than or equal to 0.2, and the z is larger than 0 and is less than or equal to 0.5. According to the invention, electronic leakage can be prevented effectively; radiative recombination of electrons and holes can be increased; the internal quantum efficiency of the LED and the light output efficiency can be improved; and the antistatic capacity of the LED can be enhanced.

Description

technical field [0001] The invention relates to the technical field of epitaxial growth of nitride semiconductor light emitting devices, in particular to a GaN-based LED epitaxial structure. Background technique [0002] GaN-based light-emitting diodes (LEDs) are typical representatives of nitride semiconductor light-emitting devices. GaN-based LEDs can emit blue light, and can be mixed with YAG yellow phosphor to emit white light. The lighting industry is inseparable from white light sources, and LEDs have many advantages such as safety, high efficiency, and energy saving. They are a new generation of solid-state lighting sources. Therefore, the LED industry and related technologies have developed rapidly in the past ten years. Jobs at the cutting edge are hot content. [0003] The design and growth of epitaxial structure is the frontier key technology of LED, especially the structure design and growth technology of GaN-based LED devices under high power and high current...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/32H01L33/06H01L33/14
CPCH01L33/06H01L33/145H01L33/32
Inventor 郑树文韩振伟何苗李述体
Owner SOUTH CHINA NORMAL UNIVERSITY
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