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Method for enhancing luminous intensity of LED by electron beam irradiation

A technology of electron beam irradiation and luminous intensity, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of LED luminous intensity increase, carrier mobility decay, carrier lifetime decay, etc., to improve LED luminous intensity. The effect of luminous intensity, ease of operation, and increased probability of radiation recombination

Inactive Publication Date: 2011-06-15
TIANJIN POLYTECHNIC UNIV
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Problems solved by technology

At high doses, the effect is more obvious, leading to the attenuation of the lifetime of minority carriers, the removal of majority carriers, the attenuation of carrier mobility, and the increase of LED luminous intensity

Method used

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  • Method for enhancing luminous intensity of LED by electron beam irradiation
  • Method for enhancing luminous intensity of LED by electron beam irradiation

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Effect test

Embodiment 1

[0013] Embodiment 1: Place the AlGaInP-based low-power red LED chip under the GJ-15 type Dinamil electron accelerator, the radiated electron energy is 1MeV, the irradiation atmosphere is 1 standard atmospheric pressure, ordinary air atmosphere, and the electron beam irradiation dose is 10KGy, the irradiation time is 10S.

Embodiment 2

[0014] Embodiment 2: The GaN-based high-power blue LED chip is placed under the GJ-15 type denami electron accelerator, the radiated electron energy is 1.5 MeV, the irradiation atmosphere is 1 standard atmospheric pressure, ordinary air atmosphere, and the electron beam irradiation dose is 100KGy, the irradiation time is 30S.

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Abstract

The invention relates to a method for enhancing luminous intensity of an LED (Light Emitting Diode) by electron beam irradiation, which is characterized in that a GJ-15 electronic dynamitron is adopted in an atmosphere of common air under standard atmospheric pressure to generate a low-energy electron beam in order to irradiate an LED chip, the defect center concentration in the LED chip is increased and the life, concentration and migration characteristics of current carriers are changed by choosing appropriate irradiation dose, thus optical and electrical properties of the LED are changed and the luminous intensity of the LED is enhanced. The method is simple and fast in process, irrelevant to complex epitaxial wafer growing process and chip manufacturing process of the LED, and accordingly, suitable for improving the optical properties of the LED chip.

Description

technical field [0001] The invention relates to a method for improving LED luminous intensity by electron beam irradiation. The present invention adopts the electron beam produced by the GJ-15 type denami electron accelerator to irradiate the LED, and will introduce defect centers in the semiconductor material, and these defect centers will serve as recombination centers under certain conditions to increase the rate of carrier radiation recombination. Chance, improve LED luminous intensity. It belongs to the field of optoelectronics and semiconductor technology. Background technique [0002] LED is the core of semiconductor lighting and an important solid-state light source, which has the advantages of low cost, long life, small size, extremely fast response speed, shock resistance and impact resistance, green environmental protection, and safe use. Therefore, improving the luminous intensity of LED and making it a third-generation lighting source is one of the research ho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/02
Inventor 牛萍娟于莉媛梁亮
Owner TIANJIN POLYTECHNIC UNIV
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