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Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of QLED device aging effects, etc., to achieve balance of charge injection, increase recombination probability, and improve The effect of the aging effect

Pending Publication Date: 2022-07-01
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem that the positive aging effect on blue and red QLED devices is not obvious when using saturated / unsaturated carboxylic acid and other active materials to encapsulate the device

Method used

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  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof

Examples

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preparation example Construction

[0068] like figure 2 As shown, the first method for preparing a quantum dot light-emitting diode includes the following steps:

[0069] S01. Provide a prefabricated device, the prefabricated device includes an anode substrate, a quantum dot light-emitting layer combined on the anode substrate, and an electronic functional layer combined on the surface of the quantum dot light-emitting layer away from the anode;

[0070] S02. use active material solution to clean the electronic functional layer, wherein, the active material in the active material solution is selected from organic hydrocarbons with at least one hydrogen atom substituted by carboxyl groups, organic esters containing carbon-carbon double bonds or carbon-carbon triple bonds or benzene rings and at least one of unsaturated ketones;

[0071] S03. Prepare a cathode on the surface of the electronic functional layer away from the quantum dot light-emitting layer to obtain a quantum dot light-emitting diode.

[0072] ...

Embodiment 1

[0104] like Figure 5 As shown, a red quantum dot light-emitting diode, an anode 110 located on a substrate 100, and a hole functional layer 120, a quantum dot light-emitting layer 130, an electron functional layer 140 and a cathode 150 are stacked in sequence, wherein the substrate 100 The material is silicon glass, the material of the anode 110 is ITO, the material of the hole function layer 120 is TFB, the material of the quantum dot light-emitting layer 130 is CdZnSe / ZnSe / ZnS, the material of the electron function layer 140 is ZnO, and the material of the electron function layer 140 is ZnO. The surface of 140 adjacent to the cathode 150 is treated with acrylic acid, and the material of the cathode 150 is Ag.

[0105] A preparation method of a quantum dot light-emitting diode, comprising:

[0106] On the anode substrate, spin-coating a hole functional material to prepare a hole functional layer 120, and prepare a quantum dot light-emitting layer 130 on the hole functional l...

Embodiment 2

[0110] A red quantum dot light-emitting diode with the same composition and material as Example 1, the difference lies in the manner of "the surface of the electronic functional layer 150 is treated with acrylic acid". Specifically, the method of “the surface of the electronic functional layer 140 is treated with acrylic acid” in Example 2 is:

[0111] The resulting prefabricated device was placed in N 2 Or in an atmosphere composed of Ar and acrylic vapor for 20 minutes, the surface of the electronic functional layer 140 is treated with acrylic acid; wherein, the volume of acrylic acid accounts for 30% of the total gas volume, the temperature of the gaseous environment is 80 ° C, and the total pressure is 1 MPa .

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Abstract

The invention relates to the technical field of display, and provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode and a cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electronic function layer arranged between the quantum dot light-emitting layer and the cathode. The surface, adjacent to the cathode, of the electronic functional layer is treated by an active material, or an interface layer is arranged between the electronic functional layer and the cathode, and the material of the interface layer contains the active material. Wherein the active material is selected from at least one of organic hydrocarbon with at least one hydrogen atom substituted by carboxyl, organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and unsaturated ketone. According to the invention, the active material is introduced into the quantum dot light-emitting layer, so that the positive aging effect of the quantum dot light-emitting diode is improved.

Description

technical field [0001] The invention belongs to the technical field of display, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum Dot Light Emitting Diodes (QLED) are electroluminescent devices based on quantum dots (QDs) technology. A series of excellent characteristics such as flexible panels, good temperature characteristics, fast response speed, energy saving and environmental protection have become the research hotspot and key development direction of new display technology. [0003] Although QLED devices borrow and utilize the structure of organic light-emitting diodes (Organic Light-Emitting Diode, OLED), due to the difference in material composition, the aging phenomenon and aging mechanism of the two are very different. For example, QLED devices have various efficiencies (current, power or external quantum efficiency) that decay or increase over time, namely "negative aging effect...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/16H10K71/00
Inventor 王劲杨一行曹蔚然
Owner TCL CORPORATION
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