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Water and oxygen self-blocking type quantum dot and preparation method thereof

A technology of quantum dots and water oxygen, applied in the field of quantum dots, can solve the problems of ligand shedding, high cost, agglomeration, etc., and achieve the effect of improving the use efficiency and service life, reducing the cost of device fabrication and application, and improving the recombination probability.

Inactive Publication Date: 2019-03-05
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a water-oxygen self-blocking quantum dot and its preparation method, aiming at solving the problem that the existing quantum dot materials are easy to interact with water and oxygen in the environment, resulting in the phenomenon of ligand falling off, being oxidized and agglomerated; and When an additional water-oxygen barrier film is introduced, there are problems of high cost and easy material falling off

Method used

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preparation example Construction

[0015] On the other hand, the embodiments of the present invention provide a method for preparing water-oxygen self-blocking quantum dots, comprising the following steps:

[0016] S01. Provide a quantum dot solution, disperse the quantum dot solution on the substrate, and dry it to obtain dispersed quantum dots;

[0017] S02. Using atomic layer deposition technology to deposit aluminum oxide on the surface of the quantum dots to prepare water and oxygen self-blocking quantum dots.

[0018] The method for preparing water-oxygen self-barrier quantum dots provided in the embodiments of the present invention uses atomic layer deposition technology to introduce alumina inorganic materials with water-oxygen barrier properties into the outer layer of quantum dots, and deposits layer by layer to form dense and uniform oxide particles. Aluminum layer, so as to endow the quantum dots with water and oxygen self-barrier properties. The preparation method of the water-oxygen self-blocking...

Embodiment 1

[0031] A method for preparing aluminum oxide-coated water-oxygen self-blocking type CdSeS / ZnS quantum dots, comprising the steps of:

[0032] S11. Disperse the dried CdSeS / ZnS quantum dots in n-hexane to obtain a CdSeS / ZnS quantum dot solution for future use. Wherein, the preparation method of CdSeS / ZnS quantum dots comprises the following steps:

[0033] (a)Zn(OA) 2 Solution preparation: Take 10mmol of ZnO powder in a three-necked flask, add 20mL of oleic acid, and heat it to 150°C under the condition of argon flow. After ZnO is completely dissolved, Zn(OA) is obtained. 2 Solution, cooled to 110°C for later use;

[0034](b) 256.8mg CdO (2mmol), 2.5ml oleic acid (OA) and 20ml tri-n-octylamine (TOA) were placed in a 100mL three-necked flask, and heated to 300°C under the protection of argon to obtain a colorless solution , which is the Cd precursor solution. When the temperature was stabilized at 300 °C, the TOP mixed solution of S (3.0 mL, 64 mg / mL) and Se (0.6 mL, 15.79 m...

Embodiment 2

[0041] A method for preparing aluminum oxide-coated water-oxygen self-blocking type CdSe quantum dots, comprising the steps of:

[0042] S21. Disperse the dried CdSe quantum dots in n-hexane to obtain a CdSe quantum dot solution for future use. Wherein, the preparation method of described CdSe quantum dots comprises the steps:

[0043] Take 0.3mmol of CdO, put it in a three-necked bottle, add 0.8ml of oleic acid and 6ml of octadecene into the three-necked bottle, seal the three-necked bottle, pass argon, and after one hour, heat it to 250°C for ten minutes, then drop to At room temperature, 2 g of octadecylamine and 1 g of TOPO were added into the three-necked flask, and argon was passed for 1 hour. Take 1.0mmol of Se powder, put it in a 6mL high-temperature-resistant glass bottle, add 1ml of TOP, and wait for the solution to be clarified at 140°C for later use. Heat the three-neck flask to 280°C, quickly inject Se-TOP, keep it warm for 10 minutes, cool down to 100°C, add ac...

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Abstract

The invention provides a water and oxygen self-blocking type quantum dot comprising a quantum dot and an aluminum oxide layer covering the surface of the quantum dot. According to the water and oxygenself-blocking type quantum dot, the surface of the quantum dot is covered with the aluminum oxide layer capable of blocking water and oxygen, and the water and oxygen self-blocking performance is given to the quantum dot. According to the water and oxygen self-blocking type quantum dot, the surface of a quantum dot material layer does not need to be additionally provided with a water and oxygen blocking layer, therefore, the device manufacturing and applying cost can be remarkably reduced, meanwhile, surface defect modes of the quantum dot can be reduced by introducing the aluminum oxide covering layer, therefore, electrons and holes can directly and effectively emit light compositely, the compositing probability of interface electrons and holes is improved, therefore the using efficiencyof the quantum dot is improved, and the service life of the quantum dot is prolonged.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, in particular to a water-oxygen self-blocking quantum dot and a preparation method thereof. Background technique [0002] Liquid crystal display technology has been widely used in people's production and life. With the development of technology, people have higher and higher requirements for color gamut. Quantum dots are expected to play an important role in high color gamut based on their excellent performance. However, in the process of actual use, quantum dots lose the protection of the solvent, and are easy to interact with oxygen and water vapor in the environment, causing problems such as ligand shedding, oxidation, and agglomeration, which will reduce the dispersion and stability of quantum dots. The probability of fluorescence quenching is greatly increased. Therefore, in practical applications of quantum dots, water and oxygen barrier layers often need to be provided on both side...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/455G02F1/1335
CPCC23C16/403C23C16/45525G02F1/1335
Inventor 杨成玉杨一行
Owner TCL CORPORATION
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