Preparation method of inorganic nanomaterial, inorganic nanomaterial and light-emitting diode

A technology of inorganic nanomaterials and light-emitting diodes, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as surface defects of zinc oxide nanomaterials, reduce irreversible effects, balance electron transfer rates, and improve quantum The effect of efficiency

Active Publication Date: 2022-06-07
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The main purpose of the present invention is to provide a method for preparing inorganic nanomaterials, aiming at solving the problem that there are a large number of surface defect states on the surface of existing zinc oxide nanomaterials

Method used

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  • Preparation method of inorganic nanomaterial, inorganic nanomaterial and light-emitting diode
  • Preparation method of inorganic nanomaterial, inorganic nanomaterial and light-emitting diode
  • Preparation method of inorganic nanomaterial, inorganic nanomaterial and light-emitting diode

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preparation example Construction

[0023] A preparation method of inorganic nanomaterials, such as figure 1 shown, including the following steps:

[0024] S01. Provide nano zinc oxide and zinc alkyl dithiophosphate;

[0025] S02, disperse the nano zinc oxide and the zinc alkyl dithiophosphate in a solvent to obtain a mixed solution;

[0026] S03, heating the mixed solution, so that the zinc alkyl dithiophosphate is decomposed to form zinc sulfide during the heating process, and the nano-zinc oxide is used as the core and the zinc sulfide is used as the shell layer. Inorganic Nanomaterials.

[0027] Specifically, in step S01, the zinc alkyl dithiophosphate can be decomposed under heating to form zinc sulfide, which can be used as a precursor of zinc sulfide to prepare the nano-zinc oxide as the core and the zinc sulfide as the shell At the same time, the alkyl dithiophosphate zinc contains a bidentate ligand of the alkyl dithiophosphate ion, and the alkyl dithiophosphate ion can simultaneously interact with t...

Embodiment 1

[0061] This embodiment prepares a quantum dot light-emitting diode, which specifically includes the following steps:

[0062] 1. Preparation of inorganic nanomaterials with the nano-zinc oxide as the core and zinc sulfide as the shell

[0063] Weigh 15 mL of the nano-zinc oxide solution with a concentration of 25 mg / mL prepared by the low temperature solution method, add 72 mg of zinc diisooctyl dithiophosphate, and mix well to obtain a mixed solution; react the mixed solution at 250 ° C for 1 h, After the reaction is completed, precipitating agent ethyl acetate is added to carry out the substrate, and then centrifugal separation is performed to obtain the inorganic nanomaterial ZnO / ZnS based on the surface modification of diisooctyl dithiophosphate ion.

[0064] 2. Preparation of quantum dot light-emitting diodes

[0065] An anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode are sequentially de...

Embodiment 2

[0067] This embodiment prepares a quantum dot light-emitting diode, which specifically includes the following steps:

[0068] 1. Preparation of inorganic nanomaterials with the nano-zinc oxide as the core and zinc sulfide as the shell

[0069] Weigh 15 mL of the nano-zinc oxide solution with a concentration of 25 mg / mL prepared by the low temperature solution method, add 72 mg of zinc diisooctyl dithiophosphate, and mix well to obtain a mixed solution; react the mixed solution at 250 ° C for 1 h, After the reaction is completed, precipitating agent ethyl acetate is added to carry out the substrate, and then centrifugal separation is performed to obtain the inorganic nanomaterial ZnO / ZnS based on the surface modification of diisooctyl dithiophosphate ion.

[0070] 2. Preparation of quantum dot light-emitting diodes

[0071] An anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode are sequentially de...

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Abstract

The invention belongs to the field of display technology, and in particular relates to a preparation method of an inorganic nanometer material, an inorganic nanometer material and a light emitting diode. The preparation method provided by the present invention includes: providing nano-zinc oxide and zinc alkyl dithiophosphate; dispersing nano-zinc oxide and zinc alkyl dithiophosphate in a solvent to obtain a mixed solution; heating the mixed solution, The alkyl zinc dithiophosphate is decomposed to form zinc sulfide during the heating process, and an inorganic nanometer material with nano zinc oxide as the core and zinc sulfide as the shell is prepared. The method solves the problem that a large number of surface defect states exist on the surface of the existing zinc oxide nanometer material.

Description

technical field [0001] The invention belongs to the technical field of display, and in particular relates to a preparation method of an inorganic nano material, an inorganic nano material and a light emitting diode. Background technique [0002] In recent years, zinc oxide nanomaterials prepared by low-temperature solution method not only have abundant raw materials and low cost, but also have the advantages of green environmental protection, simple preparation method, fast operation and convenient large-scale production, etc., and are widely favored by researchers. Solar cells, field effect transistors and other fields show great application prospects. After long-term research, it has been shown that the existing low-temperature solution preparation technology is mature, and the obtained zinc oxide nanomaterials often show excellent electrical conductivity (mobility of up to 2 × 10 -3 cm 2 V -1 s -1 ), much higher stability than organic transport materials, and low sens...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50
CPCH10K50/115H10K50/16
Inventor 聂志文刘文勇
Owner TCL CORPORATION
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