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Carrier transport material, preparation method thereof and quantum dot light-emitting diode

A quantum dot light-emitting and transmission material technology, applied in the field of quantum dot light-emitting diodes, can solve the problems of many surface defects, achieve the effects of improving compactness, improving stability, and reducing the possibility of mutual agglomeration

Pending Publication Date: 2022-07-01
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a carrier transport material, a preparation method of the carrier transport material, and a quantum dot light-emitting diode, aiming to solve the problem that there are many surface defect states in the existing zinc oxide electron transport layer technical issues

Method used

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  • Carrier transport material, preparation method thereof and quantum dot light-emitting diode
  • Carrier transport material, preparation method thereof and quantum dot light-emitting diode
  • Carrier transport material, preparation method thereof and quantum dot light-emitting diode

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preparation example Construction

[0032] Correspondingly, an embodiment of the present invention also provides a method for preparing a carrier transport material, which includes the following steps:

[0033] S1. Provide metal acetate, 1,4,8,11-tetraazacyclotetradecane, organic amine, precipitant and solvent, the metal element in the metal acetate is the metal in the metal oxide semiconductor nanocrystal element;

[0034] S2. The metal acetate, 1,4,8,11-tetraazacyclotetradecane, organic amine and solvent are mixed and processed, and the metal acetate is hydrolyzed to obtain 1,4,8,11- A solution of tetraazacyclotetradecane coordination-modified metal oxide nanocrystals;

[0035] S3. The solution is mixed with the precipitant, and the obtained solid is a metal oxide semiconductor nanocrystal modified by 1,4,8,11-tetraazacyclotetradecane coordination through solid-liquid separation.

[0036] Specifically, in S1, metal acetate is used as a raw material for preparing metal oxide semiconductor nanocrystals through...

Embodiment 1

[0066] This embodiment provides a method for preparing a carrier transport material and a quantum dot light-emitting diode, including the following steps:

[0067] (101) Weigh 3mmol of Zn(Ac) 2 ·2H 2 O and 0.15mmol of 1,4,8,11-tetraazacyclotetradecane were placed in a three-necked flask, 30ml of DMSO was added, and then stirred at 25°C until completely dissolved to obtain a solution;

[0068] (102) 5.8mmol of tetramethylammonium hydroxide was dissolved in 10ml of ethanol to obtain a dispersion;

[0069] (103) At room temperature, the dispersion liquid in the step (102) is slowly added dropwise to the solution obtained in the step (101), so that the Zn(Ac) 2 ·2H 2 O hydrolysis reaction occurs, and after the reaction is completed, ethyl acetate is added to the obtained mixed solution for precipitation, and the supernatant is discarded after centrifugation;

[0070] (104) adding absolute ethanol to the precipitate to dissolve it, then adding ethyl acetate to carry out precipi...

Embodiment 2

[0076] This embodiment provides a method for preparing a carrier transport material and a quantum dot light-emitting diode, including the following steps:

[0077] (201) Weigh 3mmol of Zn(Ac) 2 ·2H 2 O and 0.18mmol of 1,4,8,11-tetraazacyclotetradecane were placed in a three-necked flask, 30ml of DMSO was added, and then placed at 35°C and stirred until completely dissolved to obtain a solution;

[0078] (202) 5.5mmol of tetramethylammonium hydroxide is dissolved in 10ml of ethanol to obtain dispersion;

[0079] (203) At room temperature, the dispersion liquid in the step (202) is slowly added dropwise to the solution obtained in the step (201), so that the Zn(Ac) 2 ·2H 2 O hydrolysis reaction occurs, and after the reaction is completed, methyl acetate is added to the obtained mixed solution for precipitation, and after centrifugation, the supernatant is discarded;

[0080] (204) adding absolute ethanol to the precipitate to dissolve it, then adding ethyl acetate for precip...

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Abstract

The invention relates to the technical field of quantum dot light-emitting diode materials, and provides a carrier transport material, a preparation method thereof and a quantum dot light-emitting diode. The carrier transport material provided by the invention comprises a metal oxide semiconductor nanocrystal modified by 1, 4, 8, 11-tetraazacyclotetradecane in a coordination manner. According to the invention, 1, 4, 8, 11-tetraazacyclotetradecane is used as a ligand to carry out coordination modification on the metal oxide semiconductor nanocrystal, so that the defect state on the surface of a metal oxide semiconductor nanocrystal particle material can be effectively passivated, thereby avoiding adverse effects on a quantum dot material when the metal oxide semiconductor nanocrystal particle material is in contact with a quantum dot light-emitting layer; and the problems of interface fluorescence quenching and easy initiation of non-auger recombination are reduced. Besides, the 1, 4, 8, 11-tetraazacyclotetradecane ligand passivates the metal oxide semiconductor nanocrystals, so that the roughness of a thin film formed by the carrier transport material can be remarkably reduced, the compactness of the thin film is improved, the problem of leakage current of a device is favorably inhibited, and the working stability and performance of the device are improved.

Description

technical field [0001] The invention belongs to the technical field of quantum dot light emitting diode materials, and particularly relates to a carrier transport material, a preparation method of the carrier transport material, and a quantum dot light emitting diode. Background technique [0002] Quantum dot light-emitting diode (QLED), as a new type of thin-film light-emitting display device, inherits the unique optoelectronic properties of quantum dots and exhibits important commercial application value. The industry has begun to pay attention to quantum dots. Point display technology, such as: QD Vision and Nanosys in the United States, LG and Samsung in South Korea, TCL and BOE in China, etc. Therefore, quantum dot display technology will surely become the new darling of the display and lighting market as a new type of display technology. Compared with the existing liquid crystal display (LCD) and organic light-emitting diode (OLED) technologies in the display market, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10K71/12H10K85/321H10K85/30H10K85/331H10K85/361H10K85/371H10K85/381H10K50/115H10K50/16H10K71/00
Inventor 聂志文
Owner TCL CORPORATION
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