The invention relates to a QWLED of a three-dimensional
heterojunction quantum well composite light-emitting layer based on
cadmium selenide and
lead sulfide quantum dots and a preparation method of the QWLED, and belongs to the field of LED preparation. The QWLED sequentially comprises an
electrode layer, an inorganic
electron transport layer, a CdSe / PbS three-dimensional
heterojunction quantum well composite light-emitting layer, an organic
hole transport layer and an ITO glass substrate from top to bottom, and the CdSe / PbS three-dimensional
heterojunction quantum well composite light-emitting layer is of a three-dimensional heterojunction
quantum well structure formed by compounding wide bandgap
cadmium selenide quantum dots and narrow bandgap
lead sulfide quantum dots. The CdSe / PbS
quantum well composite material prepared by the invention has a three-dimensional
depletion region and a three-dimensional heterojunction structure, high
quantum efficiency, good optical characteristics and
structural stability, and the prepared LED device with the three-dimensional
depletion region and the three-dimensional heterojunction quantum well structure has excellent electroluminescent efficiency and external
quantum efficiency, and can be used as a
light emitting diode device of the three-dimensional
depletion region and the three-dimensional heterojunction quantum well structure. And the method has huge application potential in the fields of high-brightness, long-service-life and high-resolution display technology and the like.