303 results about "Cadmium selenide" patented technology

The invention provides a preparation method of an active radical with a surface-enhanced Raman scattering (SERS) effect, belongs to the technical field of spectrum detection, and relates to the preparation technology of the SERS active radical, which is rapid, has high sensitivity and performs a low trace detection function. The preparation method is characterized in that firstly, a nano porous silicon columnar array with a large specific surface area is prepared by utilizing a hydrothermal etching technology; afterwards, a nanowire structure of an II-VI group compound semiconductor (such as zinc oxide, titanium dioxide, cadmium sulfide, cadmium selenide, cadmium telluride, and the like) by utilizing a chemical vapor deposition method; and finally, nano particles of precious metal (such as gold, silver, copper and the like) are finally prepared on the nanowire structure by using a chemical reduction method, so as to obtain an active radical material. The preparation method has a wide application prospect in the aspects of clinical biomolecular fast recognition, trace chemical substance detection, biological sample analysis, and the like. The preparation method has the advantages that the preparation process of each material is simple, the condition is mild and the repetition rate reaches 100 percent.

The invention discloses and proposes a high-efficiency quantum dot light emitting diode with a self-assembly polymer hole transmission layer structure. Except a positive electrode and a negative electrode, the high-efficiency quantum dot light emitting diode comprises a three-layer structure: a hole transmission layer, a quantum dot light emitting layer and an electron transmission layer, wherein one end of the quantum dot light emitting layer is connected with the hole transmission layer, the other end of the quantum dot light emitting layer is connected with the electron transmission layer, the electron transmission layer is organic nanoparticles after doped, the hole transmission layer is formed by doping a monomer, a polymer, small-molecule, inorganic oxidized metal nanoparticles or a two-dimensional nanometer material into poly(3,4- ethylenedioxythiophene monomer), a quantum dot is quantum dots of zinc sulfide, zinc selenide, cadmium sulfide, cadmium selenide, cadmium telluride, mercury sulfide, mercury selenide, mercury telluride or core-shell nanometer structured cadmium selenide-zinc sulfide, cadmium sulfide-zinc sulfide, cadmium sulfide-zinc selenide and graphene thereof and the like, and the negative electrode is glass or polyethylene terephthalate (PET) with a layer of indium tin oxide (ITO) or fluorine-doped tin oxide (FTO) or graphene.

Cadmium selenide, and other quantum dot materials, can be integrated into thin films of poly(para-phenylene vinylene) (PPV) or other polymer compounds without aggregation of the nanocrystals. Solid-state photoluminescence spectra of composite materials prepared by these novel techniques reveal the effect of this greatly enhanced quantum dot-polymer interface relative to cases where the nanoparticles are aggregated, such that electronic communication and energy transfer between the nanoparticle and polymer components is made more efficient.

The invention discloses a preparation method of a cadmium selenide or cadmium sulfide two-dimensional monocrystal nanosheet. The method comprises the steps that the CdSe or CdS two-dimensional monocrystal nanosheet is prepared through a van der Waals epitaxial growth technology, the method is characterized in that a mica sheet which is smooth in surface and free of chemical dangling bond is adopted to serve as a substrate, CdCl2 powder or Se powder or S powder serves as a source material, argon serves as carrier gas, CdCl2 stream is reacted with Se or S steam to form CdSe or CdS steam at high temperature, and the steam is deposited on the mica sheet for nucleation and epitaxially grows into the CdSe or CdS two-dimensional monocrystal nanosheet. The preparation method of the cadmium selenide or cadmium sulfide two-dimensional monocrystal nanosheet is easy to operate, low in cost and strong in controllability, the obtained CdSe or CdS has the advantages of being good in size uniformity, high in degree of crystallinity and the like, and important research value and wide application prospect in the fields of solar cells, field effect transistors, photoelectric detectors, photocatalyses and the like are achieved.

The invention discloses the preparation method of low cost cadmium selenide (CdSe) / cadmium sulphide (CdS) / zinc sulphide (ZnS) quantum point. The invention is characterized in that ethide xanthic acid cadmium and ethide xanthic acid zinc are adopted to be respectively dissolved in the mixed solvent of oleic amine and oleic acid, as well as cadmium stearate and zinc stearate; as the front dirking liquid of clads CdS and ZnS of a SdSe quantum point, the invention is slowly dropped into the mixed liquor of octadecene and octadecylamine dissolved with CdSe quantum point, so as to obtain CdSe / CdS / ZnS quantum points. The invention has the advantages that the price of the raw material is cheap, the toxicity is low, the operation is simple, and the mass synthesis is proper.

A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group VI elements in the II-VI semiconductor material are Sulfur, Selenium, and Tellurium. In one example of the laser an edge emitting heterostructure includes two active layers of zinc cadmium selenide, two waveguide layers of zinc magnesium sulfoselenide, and two cladding layers, also of zinc magnesium sulfoselenide. Proportions of elements in the cladding layer material and the waveguide layer material are selected such that the waveguide layer material has a higher bandgap than the material of the waveguide layers. In another example, a two dimensional array of InGaN diode-lasers is arranged to optically pump a one dimensional array of II-VI edge-emitting heterostructure lasers.

The invention relates to the material field and discloses a method for embedding cadmium selenide quantum dots in a mesoporous titanium dioxide framework. The method utilizes solvent volatilization induction self assembly technology and includes the following steps: first preparing a precursor solution containing a titanium source, a cadmium source and a surfactant, conducting aging to obtain gel, then removing organics in a sample through roasting and finally conducting ion exchange processing with a solution containing a selenium source to obtain the cadmium selenide quantum dots embedded in the mesoporous titanium dioxide framework. An obtained product has good crystallinity degree and has obvious crystal lattices and visible light effects. The method is simple in preparation, convenient to operate, mild in condition and suitable for preparing monodisperse CdSe quantum dots with passivated surface and regular feature.

The invention discloses a preparation method of a semiconductor nano-wire-based organic / inorganic composite solar cell, belonging to the technical field of new energy resources. The method is characterized by comprising the following steps: preparing nano silicon with good light absorption performance in a visible light area by an electrochemical corrosion or hydrothermal corrosion technology; growing a zinc oxide or titanium dioxide or cadmium selenide nano-wire array on the nano silicon substrate by a high-temperature chemical vapor deposition method or low-temperature liquid phase chemical method; spinning poly-3-hexylthiophene (P3HT) or poly[2-methoxy-5-(2-ethyhexyloxy)-1,4-p-phenylene vinylene] (MEH-PPV) or poly(3-octylthiophene) (P3OT) on the nano-wire array to form a three-layer composite structure system; and finally preparing a magnesium fluoride or calcium fluoride surface anti-reflection film and metal film electrode to form a solar cell device. The process disclosed by the invention is simple, the operation is simply and easily implemented, the preparation conditions are mild, the repetition rate reaches 100%, and the prepared organic / inorganic composite material system is an important material for manufacturing a full-silicon-based solar cell device in the future.

The invention relates to a method for preparing a photoelectric adapter sensor for detecting 17beta-estradiol. The photoelectric adapter sensor takes a prepared cadmium selenide nano particle modified titanium dioxide nano tube as a matrix electrode; after the surface of the electrode is functionalized by chitosan and glutaraldehyde, and a 17beta-estradiol adapter is dropwise added onto the surface of the electrode so as to prepare the 17beta-estradiol photoelectric adapter sensor. Compared with the prior art, the method combines the 17beta-estradiol photoelectric adapter sensor with specific recognition capability with a supersensitive photoelectric analysis technique for detecting an environmental internal-secretion interfering-substance 17beta-estradiol, so that not only is high sensitivity acquired, but also interference of a complex matrix environment is prevented, and high selectivity is achieved; when the method is used in low-concentration 17beta-estradiol detection, a wide working curve range of 5*10<-13> mol / L to 15*10<-12> mol / L is obtained, the minimum detection limit can be 3.3*10<-14> mol / L, and moreover, the 17beta-estradiol photoelectric adapter sensor is simple in preparation method, low in cost and good in stability and repeatability.

A method for synthesizing cadmium selenide or zinc selenide quantum dots from selenium dioxide is to add the selenium dioxide precursor solution into the fatty acid cadmium or fatty acid zinc precursor solution under stirring, and react at 150-320° C. After the end, it is separated and purified with low carbon alcohol. The method completely does not use alkylphosphine and other environmentally harmful solvents and surfactants, and can obtain high-quality quantum dots with narrow size distribution.

The invention discloses a method for synthesizing a cadmium selenide quantum dot modified titanium dioxide compound photocatalyst. The method for synthesizing the cadmium selenide quantum dot modified titanium dioxide compound photocatalyst comprises the following steps: 1) preparing cadmium selenide quantum dots in different grain diameters by adopting an aqueous phase synthesis method by virtue of selenide powder and CdCl2 under an alkali condition; 2) by adopting a sol-gel method, preparing spherical titanium dioxide powder with tetrabutyl titanate as a titanium source and ethanol as a solvent while the synthesized cadmium selenide quantum dots are added, so that the compound photocatalyst is prepared. The method for synthesizing the cadmium selenide quantum dot modified titanium dioxide compound photocatalyst has the advantages that narrow-bandwidth semiconductor cadmium selenide quantum dot modified titanium dioxide is used for preparing the compound photocatalyst which can absorb visible light, operation is easy, and performance is stable; meanwhile, a better pollutant degradation effect is realized, so that the method for synthesizing the cadmium selenide quantum dot modified titanium dioxide compound photocatalyst has a good application prospect.

The invention belongs to the method for compounding cadmium selenide and quanta of cadmium telluride, which is: use cadmium oxide containing 2~18 carbon atom as cadmium source, selenium powder as selenium source and tellurium powder as tellurium source, and the mol ratio of cadmiumsource and selenium source or tellurium source is 5:1-1:5, dissolve the selenium and tellurium powder with tricapryl phosphine, make oleic acid, and tricapryl phosphine oxide as enveloping agent and the mol ratio of cadmium source and enveloping agent is 1:2-1:6, use benzene, toluene, cyclohexane, normal hexane and normal heptane as solvent, under the condition that the density of cadmium source is 0.001-0.015M, the temperature in autoclave is 140-180deg.C, heat them for 0.8-16 hours and obtain cadmium selenide and quanta of cadmium telluride with different sizes by changing the reaction time. The cadmium selenide and quanta of cadmium telluride has narrower size distribution which is shown as narrower shooting of fluorescence whose half-peak width of quanta of cadmium selenide is 22-33nm and that of quanta of cadmium telluride is 29-35nm.

The invention discloses an assembling method of quantum point in the dielectric silica, which comprises the following steps: adopting SBA-15 as mould; making amino propyl trimethoxy silane to decorate dielectric silica; adding cadmium acetate; adsorbing Cd2+ in the channel to form SBA-15-Cd2+; reacting with TOPO, Se or Te; controlling reacting time to the grain size of cadmium selenide of quantum point of or cadmium telluride in the channel.

The invention relates to a preparation method of a competitive photoelectrochemical sensor of manganese-doped cadmium selenide enhanced bismuth tungstate-cadmium sulfide beta amyloid protein. According to the method, bismuth tungstate-cadmium sulfide is used as a base material to acquire a photoelectric current, and the photoelectric conversion efficiency of flower-like bismuth tungstate sensitized by cadmium sulfide is greatly improved; and manganese-doped cadmium selenide is used as a marker to mark a beta amyloid protein antigen, the sensitivity of the sensor is improved through competitiveimmune reactions between the marked antigen and an antibody and between a non-marked antigen and the antibody, and sensitivity detection of amyloid protein is realized, wherein the detection limit is0.068 pg / mL.

The invention discloses a ratiometric fluorescent probe and a preparation thereof, and an application of the ratiometric fluorescent probe in detection of glutathione. The ratiometric fluorescent probe is prepared through the following steps: with green quantum dots as cores, carrying out embedding in silica nanoparticles, then subjecting the surface of the silica nanoparticles to amination modification, and covalently coupling red quantum dots onto the amination modified surface of the silica nanoparticles so as to obtain the ratiometric fluorescent probe, wherein the green quantum dots are cadmium telluride quantum dots modified by N-acetyl-L-cysteine. According to the invention, a St ber method is utilized to prepare quantum dot embedded silica nanoparticles, so the synthetic method issimple and has less time consumption. The probe provided by the invention has low detection limit and can realize specific detection during detection of GSH; meanwhile, the probe has advantages like simple preparation and good stability, reduces the detection limit of glutathione to 45 nM, and provides convenience for rapid visual detection.

The invention discloses a method and a device for preparing a cadmium selenide sulfide nano material with monotonous and continuous variable band gap. According to the preparation method, based on a vapor deposition method, the positions of a cadmium sulfide quartz boat and a cadmium selenide quartz boat in a tubular high-temperature furnace are adjusted through a magnet to continuously adjust the vapor concentration ratio of cadmium sulfide to cadmium selenide during growing the nano material so as to realize monotonous continuous transition of the band gap on the same nano band or nano wire. The preparation method is simple and low in cost; the ratio of sulfur element to selenium element on the prepared single nano material can be continuously transited to 0: 1 from 1: 0; and the nano material has potential application value in the fields of tunable lasers, wideband lasers, white light LEDs, wide spectrum detectors and the like.

The invention relates to the process for preparing cadmium selenide and cadmium telluride nano sticks , wherein cadmium oxide is used as the monomer, and tetradecanoic acid is used as ligand, by controlling the nucleation and growth procedure of the nanocrystalline, and injecting selenium or tellurium precursor solution into the cadmium precursor solution at the temperature of 190 deg. C to 230 deg. C, the nano sticks can be prepared at the temperature of 160-180 deg. C. The advantages of the cadmium selenide and cadmium telluride nano sticks are high yield, narrow dimension distribution, uniform shapes and fine repeatability for experiment.

The invention relates to the technical field of semiconductor photoelectrons, in particular to a full-color high-resolution micro-display chip based on gallium nitride LEDs and the quantum dot technology.Cadmium selenide (CdSe) quantum dots (QD) of different scales are stimulated by light emitting of the gallium nitride LEDs to generate red, green and blue three radical colors respectively.The chip is composed of the red micron-grade LED capable of independently emitting light, the green micron-grade LED capable of independently emitting light and the blue micron-grade LED capable of independently emitting light.Each stimulated quantum dot is composed of n-Gan and p-Gan, wherein an inverted GaN-based LED is adopted for a Gan-based blue light chip of the stimulated quantum dot, electrodes of the p-GaN are transferred to another substrate through a bonding method, and a drive circuit of pixels is formed on the substrate.The scheme of generating a red, green and blue full-color micro displayer by stimulating the CdSe quantum dots through the GaN blue light chip is adopted, and therefore a better color gamut cover rate, higher color control accuracy and higher red, green and blue color purity are achieved.The advantages of the simple process and low cost are achieved.

The invention discloses a NiO / CdSe / MoS2 laminar composite photocathode and a preparation method thereof. The preparation method comprises the following steps: (1) with ITO conductive glass as a base, preparing a uniform and consistent nickel oxide layer employing a hydrothermal process; (2) loading cadmium selenide on the surface of nickel oxide by adopting an ion alternate adsorption method; and (3) with a NiO / CdSe electrode as a cathode, and (NH4)2[MoS4] as a deposition liquid, depositing MoS2 particles on the surface of the NiO / CdSe electrode by adopting a light-assisted potentiostatic deposition method, so as to obtain a MoS2-modified electrode. According to the method for preparing the photocathode, the amounts of an absorption agent and a cocatalyst are controllable; and under visible light irradiation, the composite photocathode shows good photoelectrocatalytic activity and visible light response characteristics, is stable in performance, and can be effectively applied to the field of photoelectrocatalysis of water decomposition to produce hydrogen.

A housing for a portable electronic device includes a molded base and a nano-particle coating. The nano-particle coating is formed on the molded base. The nano-particle coating has nano-particles comprising a material selected from the group of zinc sulfide (ZnS), cadmium sulfide (CdS), tellurium sulfide (TeS), zinc selenide (ZnSe), cadmium selenide (CdSe), cerium oxide (CeO2), zinc oxide (ZnOx), tin oxide (SnO2), zinc-europium orthosilicate (Eu—ZnSiOx), barium-magnesium-europium aluminate (BaMgAlOx—Eu), and gadolinium-yttrium-europium borate ((Y, Gd)BO3—Eu), the nano-particles have predetermined sizes for producing different color.

The invention discloses a synthesizing method of cadmium selenide quantum point through microbe cell, which comprises the following steps: A. A. preparing microbe cell; B. selenidizing the microbe cell; C. cadmating the cell to culture continuously; D. extracting CdSe quantum point from cell; E. purifying the CdSe quantum point. The invention simplifies the operation without organic metal compound and inert gas to protect, which is beneficial to do industrialization synthesis of nanometer particle (quantum point).

The invention discloses an aqueous phase synthesis for high quality cadmium selenide quantum dots in temperature controlled microwave reactor by using water as solvent, mixing cadmium salt or cadmium oxide with water-soluble mercapto compounds, reacting sodium borohydride or potassium borohydride with selenium powder, obtaining cadmium selenide precursor solution, placing the solution in air-tight polytetrafluoroethylene tank, reacting in temperature controlled microwave reactor, thus rapidly synthesizing cadmium selenide fluorescent light quantum dots.

The invention provides a graphene-cadmium selenide nanoribbon heterojunction, relates to a graphene-cadmium selenide nanoribbon heterojunction solar cell, provides a method for preparing the solar cell, and relates to a parallel module of the graphene-cadmium selenide nanoribbon heterojunction solar cell and a preparation method of the parallel module. The graphene-cadmium selenide nanoribbon heterojuntion consists of a graphene thin film and a cadmium selenide nanoribbon; and the solar cell comprises the graphene-cadmium selenide nanoribbon heterojuntion, a wire and various substrates. The heterojunction, the solar cell and the cell module provided by the invention have the advantages of simple structure and small volume, can be stable for a long time in the air, are applicable to mass production and have good application prospects. Moreover, the preparation method is simple and convenient.

The invention relates to a method for synthesizing powder of cadmium selenide quanta dots capable of emitting blue light, belonging to the technical field of processing nanometer inorganic compound material of semiconductor. With cadmium acetate dehydrate and sodium selenite as raw material, disodium ethylenediamintetraacetate as chelating agent, and in the aqueous solution with weak alkaline, cadmium selenide quanta dots are synthesized by being radiated by electron beams. The powder of cadmium selenide quanta dots is obtained after separating the synthesized product. The cadmium selenide powder prepared by the invention has extremely good water solubility, good monodispersity, and even size with an average particle size of three nanometers. The cadmium selenide powder emits blue light, has good fluorescence characteristics and is used for manufacturing biological fluorescence probe.

Provided is a selenium precursor liquid which is achieved by the preparation of heating and dissolving the elemental selenium in oleoyl morpholine under the protection of inert gas. The process for the preparation of cadmium selenide or zinc selenide quantum dots with the selenium precursor liquid is to generate pyrolytic reaction by stirring and mixing the selenium precursor liquid and fatty acid cadmium or fatty acid zincum precursor liquid under the protection of inert gas at a temperature of 150 DEG C to 330 DEG C, and the last is to separate and purify the mixture with low carbon alcohols. The dissolving capacity of the oleoyl morpholine for the elemental selenium is strong, the compatibility of the oleoyl morpholine with other green common solvents is perfect, which can increase the volume productivity of selenide nanocrystalline, thereby achieving quantum dots with relatively narrower size and higher quality.

Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

The invention discloses a method for continuously preparing quantum dots through a microchannel reactor and belongs to the field of chemical engineering. The quantum dots are cadmium selenide mononuclear quantum dots or cadmium selenide / zinc sulfide nuclear shell type quantum dots. The method comprises the steps of heating a prepared cadmium precursor solution and a selenium precursor solution to the reaction temperature, then mixing the solutions, and conducting a reaction, so that a solution of cadmium selenide quantum dots small in grain size is obtained; continuously adding the cadmium precursor solution, and making the cadmium selenide quantum dots small in grain size grow, so that a solution of cadmium selenide quantum dots large in grain size is obtained; or mixing the solution of the cadmium selenide quantum dots small in grain size with a prepared zinc sulfide precursor solution at the room temperature, and then heating the mixture to the reaction temperature for a reaction, so that a cadmium selenide / zinc sulfide nuclear shell type quantum dot solution is obtained; then conducting post-treatment on the quantum dot solution, so that the cadmium selenide nononuclear quantum dots or cadmium selenide / zinc sulfide nuclear shell type quantum dots are finally obtained. The preparation method is simple in operation and accurate to regulate, continuous production can be conducted, and the method is beneficial to industrialized production of the quantum dots.

The invention relates to a preparation method of zirconium silicate wrapped high-temperature sulfur cadmium selenide bright red pigment, which comprises the following steps that: acid and alkaline solution is first prepared; then gel is synthesized; ingredients are dried; a cadmium red pigment protective layer zirconium silicate is generated after calcination and synthesis; acid and alkali treatment is carried out, and cadmium red pigment which is not wrapped is removed by acid and alkali, so that the product coloring quality is not affected when the pigment is used in high-temperature glaze.The preparation method of the zirconium silicate wrapped high-temperature sulfur cadmium selenide bright red pigment solves the problems of the prior art that the sintering temperature is quite high and the synthesis time is quite long, the prepared bright red pigment has bright colors, the washing time and the synthesis time are shortened, the preparation cost is low, and wide market prospect isrealized.

Luminescent solar concentrators in accordance with various embodiments of the invention can be designed to minimize photon thermalization losses and incomplete light trapping using various components and techniques. Cadmium selenide core, cadmium sulfide shell (CdSe / CdS) quantum dot (“QD”) technology can be implemented in such devices to allow for near-unity QDs and sufficiently large Stokes shifts. Many embodiments of the invention include a luminescent solar concentrator that incorporates CdSe / CdS quantum dot luminophores. In further embodiments, anisotropic luminophore emission can be implemented through metasurface / plasmonic antenna coupling. In several embodiments, red-shifted luminophores are implemented. Additionally, top and bottom spectrally-selective filters, such as but not limited to selectively-reflective metasurface mirrors and polymeric stack filters, can be implemented to enhance the photon collection efficiency. In some embodiments, luminescent solar concentrator component is optically connected in tandem with a planar Si subcell, forming a micro-optical tandem luminescent solar concentrator.