The application relates to the technical field of photoelectric sensors, and particularly provides a low-cost
moisture-resistant photoelectric
detector core and a preparation method thereof. The photoelectric
detector core comprises a substrate layer, a
cadmium selenide layer arranged on the substrate layer, an
electrode layer arranged on the end face of the
cadmium selenide layer away from the substrate layer, wherein the
electrode layer comprises positive and negative
electrode regions arranged in an interdigital manner, a PTFE layer deposited in situ and covering the region of the
cadmium selenide layer which is not provided with the electrode layer, and the PTFE layer forms a dense and combined hydrophobic
passivation interface with the
cadmium selenide photosensitive layer through a magnetron
sputtering process. The PTFE layer is used for blocking the penetration of water molecules and passivating the surface defect states of the
cadmium selenide photosensitive layer. The water molecules are prevented from being adsorbed and condensed on the exposed
semiconductor surface between the electrodes, the surface leakage
current channel is
cut off, and the
baseline drift under a high-
humidity environment is reduced. The dangling bonds and defect states on the surface of the
cadmium selenide are passivated, the
dark current is reduced, the
photocurrent is improved, and the photoelectric response performance is improved.