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Preparation method of competitive photoelectrochemical sensor of manganese-doped cadmium selenide enhanced bismuth tungstate-cadmium sulfide beta amyloid protein

An amyloid, photoelectrochemical technology, applied in the direction of material electrochemical variables, scientific instruments, instruments, etc., to achieve the effects of short response time, improved sensitivity and specificity, and good photoelectric performance

Active Publication Date: 2018-12-21
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The application of bismuth tungstate materials in photoelectrochemical sensors has not been reported

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Embodiment 1 Preparation of photoelectrochemical sensor

[0041] (1) Preparation of flower-like bismuth tungstate materials

[0042] Dissolve 0.5 g of sodium tungstate in 30 mL of water to obtain solution A; dissolve 1.0 g of bismuth nitrate in 10 mL of water for solution B; After reacting for 16 h, after the end of the reaction; cooling naturally, the product was washed 3 times with absolute ethanol and ultrapure water, and vacuum-dried at 30 °C for 10 h to obtain a flower-shaped bismuth tungstate material;

[0043] (2) Preparation of cadmium sulfide quantum dots

[0044] Dissolve 0.3 g of sodium sulfide nonahydrate in 10 mL of ultrapure water, and dissolve 0.4 g of cadmium acetate in 10 mL of ultrapure water; mix the two solutions evenly, transfer them to a reaction kettle, and heat them under 160 °C Reacted for 20 h; after cooling to room temperature, the resulting product was washed three times with absolute ethanol and ultrapure water; vacuum-dried at 40 °C for 1...

Embodiment 2

[0057] Example 2 Preparation of photoelectrochemical sensor

[0058] (1) Preparation of flower-like bismuth tungstate materials

[0059] Dissolve 0.6 g of sodium tungstate in 30 mL of water to obtain solution A; dissolve 1.5 g of bismuth nitrate in 15 mL of water to obtain solution B; After the reaction was completed for 17 h, the reaction was completed; naturally cooled, the product was washed 3 times with absolute ethanol and ultrapure water, and vacuum-dried for 10 h at 30 ° C to obtain a flower-shaped bismuth tungstate material;

[0060] (2) Preparation of cadmium sulfide quantum dots

[0061] Dissolve 0.35 g of sodium sulfide nonahydrate in 15 mL of ultrapure water, and dissolve 0.4 g of cadmium acetate in 15 mL of ultrapure water; mix the two solutions evenly, transfer them to a reaction kettle, and heat them at 170 °C React for 21 h; after cooling to room temperature, the resulting product was washed three times with absolute ethanol and ultrapure water; vacuum-dried ...

Embodiment 3

[0074] Example 3 Preparation of photoelectrochemical sensor

[0075] (1) Preparation of flower-like bismuth tungstate materials

[0076] Dissolve 0.8 g of sodium tungstate in 30 mL of water to obtain solution A; dissolve 2.0 g of bismuth nitrate in 25 mL of water to obtain solution B; After the reaction was completed for 18 h, the reaction was completed; naturally cooled, the product was washed 3 times with absolute ethanol and ultrapure water, and vacuum-dried at 40 ° C for 12 h to obtain a flower-shaped bismuth tungstate material;

[0077] (2) Preparation of cadmium sulfide quantum dots

[0078]Dissolve 0.4 g of sodium sulfide nonahydrate in 25 mL of ultrapure water, and dissolve 0.45 g of cadmium acetate in 20 mL of ultrapure water; mix the two solutions evenly, transfer them to a reaction kettle, and heat them under 180 °C React for 22 h; after cooling to room temperature, the resulting product was washed three times with absolute ethanol and ultrapure water; vacuum-drie...

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PUM

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Abstract

The invention relates to a preparation method of a competitive photoelectrochemical sensor of manganese-doped cadmium selenide enhanced bismuth tungstate-cadmium sulfide beta amyloid protein. According to the method, bismuth tungstate-cadmium sulfide is used as a base material to acquire a photoelectric current, and the photoelectric conversion efficiency of flower-like bismuth tungstate sensitized by cadmium sulfide is greatly improved; and manganese-doped cadmium selenide is used as a marker to mark a beta amyloid protein antigen, the sensitivity of the sensor is improved through competitiveimmune reactions between the marked antigen and an antibody and between a non-marked antigen and the antibody, and sensitivity detection of amyloid protein is realized, wherein the detection limit is0.068 pg / mL.

Description

technical field [0001] The invention relates to a preparation method of a competitive photoelectrochemical sensor based on manganese-doped cadmium selenide enhanced bismuth tungstate-cadmium sulfide beta amyloid (1-42). Specifically, cadmium sulfide-sensitized bismuth tungstate is used as the base photosensitive material, and manganese-doped cadmium selenide is used as the marker to label the antigen. There is a competitive immune reaction between the labeled antigen and the unlabeled antigen and antibody. A competitive electrochemical sensor for detecting β-amyloid (1-42) belongs to the field of new functional materials and biosensing detection technology. Background technique [0002] In recent years, the incidence of Alzheimer's disease (AD) has been increasing year by year. It is a neurodegenerative disease with insidious onset and progressive development. Clinically, it is characterized by comprehensive dementia such as memory impairment, aphasia, apraxia, agnosia, imp...

Claims

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Application Information

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IPC IPC(8): G01N27/30G01N27/327G01N33/531
CPCG01N27/30G01N27/327G01N33/531
Inventor 魏琴徐芮张勇吴丹王超杜斌
Owner UNIV OF JINAN
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