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Synthesis method for cadmium selenide and cadmium telluride quantum dot

A technology of cadmium telluride quantum dots and cadmium selenide, which is applied in the field of synthesis of cadmium selenide and cadmium telluride quantum dots, can solve the problems of unfavorable large-scale industrial production and wide size distribution, so as to reduce energy consumption and operate Simple, low reaction temperature effect

Inactive Publication Date: 2005-06-29
CHANGZHOU INST OF ENERGY STORAGE MATERIALS &DEVICES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, this method is still not conducive to large-scale industrial production
There are also people trying to synthesize semiconductor quantum dots by solvothermal method (Chem.Commun.2001, 629-630), but the size distribution of the resulting product is wide, showing a wide fluorescence emission spectrum

Method used

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  • Synthesis method for cadmium selenide and cadmium telluride quantum dot
  • Synthesis method for cadmium selenide and cadmium telluride quantum dot
  • Synthesis method for cadmium selenide and cadmium telluride quantum dot

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Effect test

Embodiment 1

[0013] Heat the mixture of 0.1mmol (0.0235g) cadmium acetate, 0.6mmol (0.2320g) TOPO and 20ml benzene at a temperature of 90±10°C until it is colorless and transparent. After cooling down to below 40°C, mix the solution with The solution of 0.05mmol (0.004g) selenium and 0.06g TOP is mixed and added together into a 30ml autoclave with Teflon lining, the autoclave is sealed and put into the furnace to heat at 160°C for 1 hour, after cooling, selenium Cadmium oxide quantum dot generation. The fluorescence emission peak position of its benzene solution at room temperature is around 521nm, and the half-maximum width is 31nm.

Embodiment 2

[0015] Heat a mixture of 1.0mmol (0.5671g) cadmium tetradecyl carboxylate, 3.2mmol (0.891g) oleic acid and 70ml toluene at a temperature of 90±10°C until it is colorless and transparent, and after cooling to below 40°C, Then this solution was mixed with a solution containing 5.0mmol (0.3948g) selenium and 4.3g TOP, and then they were added together into a 100ml autoclave with a polytetrafluoroethylene lining, and the autoclave was sealed and heated at 180°C for 10 hours in a furnace , after cooling, cadmium selenide quantum dots are formed. The fluorescence emission peak position of its toluene solution at room temperature is around 643nm, and the half-peak width is 26nm.

Embodiment 3

[0017] Heat the mixture of 0.6mmol (0.4071g) cadmium stearate, 1.2mmol (0.4640g) TOPO and 40ml cyclohexane at a temperature of 90±10°C until it is colorless and transparent, and after cooling to below 40°C, put This solution is mixed with a solution containing 0.6mmol (0.0474g) of selenium and 0.32g of TOP, and is added to a 50ml autoclave with a polytetrafluoroethylene liner. After that, cadmium selenide quantum dots are formed. The fluorescence emission peak position of its cyclohexane solution at room temperature is around 494nm, and the half-peak width is 30nm.

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Abstract

The invention belongs to the method for compounding cadmium selenide and quanta of cadmium telluride, which is: use cadmium oxide containing 2~18 carbon atom as cadmium source, selenium powder as selenium source and tellurium powder as tellurium source, and the mol ratio of cadmiumsource and selenium source or tellurium source is 5:1-1:5, dissolve the selenium and tellurium powder with tricapryl phosphine, make oleic acid, and tricapryl phosphine oxide as enveloping agent and the mol ratio of cadmium source and enveloping agent is 1:2-1:6, use benzene, toluene, cyclohexane, normal hexane and normal heptane as solvent, under the condition that the density of cadmium source is 0.001-0.015M, the temperature in autoclave is 140-180deg.C, heat them for 0.8-16 hours and obtain cadmium selenide and quanta of cadmium telluride with different sizes by changing the reaction time. The cadmium selenide and quanta of cadmium telluride has narrower size distribution which is shown as narrower shooting of fluorescence whose half-peak width of quanta of cadmium selenide is 22-33nm and that of quanta of cadmium telluride is 29-35nm.

Description

technical field [0001] The invention belongs to a synthesis method of cadmium selenide and cadmium telluride quantum dots. Background technique [0002] Inorganic semiconductor nanocrystals differ from bulk materials in many physical properties. For example, due to the quantum confinement effect, II-VI semiconductor quantum dots (Semiconductor Quantum Dots), that is, semiconductor nanocrystals with three-dimensional dimensions smaller than their exciton Bohr diameter, exhibit size-dependent optical properties, and this property It can be applied to the preparation of light-emitting diodes, solar cells, single-electron lasers, biological labels and other fields. Therefore, the synthesis of size-controllable semiconductor quantum dots has become the focus of extensive research in recent years. In the synthesis of II-VI semiconductor quantum dots, the method of thermal decomposition of metal organic compound precursors developed by the Bawendi group is one of the methods widel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04C01G11/00
Inventor 王强潘道成聂伟蒋世春姬相玲安立佳
Owner CHANGZHOU INST OF ENERGY STORAGE MATERIALS &DEVICES
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