The invention provides a method for rapidly cutting silicon wafers with an electroplating diamond wire with ultrahigh efficiency. The method includes the following steps that firstly, bar sticking is conducted; secondly, feeding is conducted; thirdly, a cutting solution is prepared; fourthly, cutting is conducted; fifthly, discharging is conducted; sixthly, degumming and cleaning are conducted; and seventhly, checking and packaging are conducted. According to cutting, a cutting rack drives a silicon bar to move towards the electroplating diamond wire, and meanwhile a main roller drives an electroplating diamond wire net to conduct reciprocating movement to achieve cutting; in the cutting process, the linear speed of the electroplating diamond wire ranges from 1300 m/min to 1500 m/min, the workpiece cutting speed ranges from 1 mm/min to 4.5 mm/min, and the thickness of a diamond particle coating on the electroplating diamond wire ranges from 3 microns to 5 microns; and in the cutting process, the manner of conducting forward feeding firstly and backward feeding secondly is adopted in the electroplating diamond wire, and before each workpiece is machined, the 3 km-5 km electroplating diamond wire is fed to a wire collecting wheel. By means of the cutting method, 8.4 inch and 650 mm crystalline silicon bars can be smoothly cut within 1 h, and the problem that in the prior art the efficiency for cutting silicon wafers with electroplating diamond wire is low is solved.