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High-efficiency quantum dot light emitting diode with self-assembly polymer hole transmission layer structure

A technology of quantum dot luminescence and hole transport layer, which is applied in the field of high-efficiency quantum dot light-emitting diodes with a three-layer structure of self-assembled polymer hole buffer transport layer, can solve problems affecting device life and load power, and achieve energy efficiency and high efficiency. Efficiency, the effect of simple preparation method

Inactive Publication Date: 2016-05-25
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, from a thermodynamic point of view, these multi-layer transport layers in the device will affect the lifetime and load power of the device

Method used

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  • High-efficiency quantum dot light emitting diode with self-assembly polymer hole transmission layer structure
  • High-efficiency quantum dot light emitting diode with self-assembly polymer hole transmission layer structure

Examples

Experimental program
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Effect test

Embodiment 1

[0024] High-efficiency quantum dot light-emitting diodes with forward self-assembled polymer hole layers, such as figure 1 As shown, it includes a cathode 1, a hole transport layer 2, a quantum dot light-emitting layer 3, an electron transport layer 4 and an anode electrode 5 formed on the substrate. layer, electron transport layer and anode, wherein the hole transport layer is 10nm thick, the quantum dot light-emitting layer is 20nm thick, and the electron transport layer is 30nm thick.

[0025] The preparation method of the high-efficiency quantum dot light-emitting diode of the above-mentioned forward self-assembled polymer hole layer comprises the following steps:

[0026] (1) Preparation of hole transport layer perfluoroionomer PFIs doped poly3,4-ethylenedioxythiophene monomer PEDOT:PSS on transparent conductive glass substrate by inkjet method, mass fraction of perfluoroionomer PFIs 10%, and sintered under nitrogen atmosphere for 20 minutes, the sintering temperature is...

Embodiment 2

[0031] Efficient quantum dot light-emitting diodes with inverted self-assembled polymer hole layers, such as figure 2 As shown, it includes an anode 1, an electron transport layer 2, a quantum dot light-emitting layer 3, a hole transport layer 4 and a cathode electrode 5 formed on the substrate. , a hole transport layer and a cathode, wherein the thickness of the electron transport layer is 50nm, the thickness of the quantum dot light-emitting layer is 30nm, and the thickness of the hole transport layer is 20nm.

[0032] The preparation method of the high-efficiency quantum dot light-emitting diode of the above-mentioned reverse self-assembled polymer hole layer comprises the following steps:

[0033] (1) Calcium-doped TiO 2 The nanoparticle layer is prepared on the anode electrode Al, and the inorganic nanoparticle light-emitting layer is sintered in oxygen for 20 minutes at a sintering temperature of 200°C.

[0034] (2) Preparation of quantum dots: The quantum dot layer p...

Embodiment 3

[0038] High-efficiency quantum dot light-emitting diodes with forward self-assembled polymer hole layers, such as figure 1 As shown, it includes a cathode 1, a hole transport layer 2, a quantum dot light-emitting layer 3, an electron transport layer 4 and an anode electrode 5 formed on the substrate. layer, electron transport layer and anode, wherein the hole transport layer is 30nm thick, the quantum dot luminescent layer is 40nm thick, and the electron transport layer is 70nm thick.

[0039] The preparation method of the high-efficiency quantum dot light-emitting diode of the above-mentioned forward self-assembled polymer hole layer comprises the following steps:

[0040] (1) The hole transport layer was prepared by inkjet method on the transparent conductive glass substrate. The mass fraction of vinyl PPV was 5%, and the hole transport layer was prepared, and sintered in a nitrogen environment for 20 minutes, and the sintering temperature was 150 degrees.

[0041] (2) Prepa...

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Abstract

The invention discloses and proposes a high-efficiency quantum dot light emitting diode with a self-assembly polymer hole transmission layer structure. Except a positive electrode and a negative electrode, the high-efficiency quantum dot light emitting diode comprises a three-layer structure: a hole transmission layer, a quantum dot light emitting layer and an electron transmission layer, wherein one end of the quantum dot light emitting layer is connected with the hole transmission layer, the other end of the quantum dot light emitting layer is connected with the electron transmission layer, the electron transmission layer is organic nanoparticles after doped, the hole transmission layer is formed by doping a monomer, a polymer, small-molecule, inorganic oxidized metal nanoparticles or a two-dimensional nanometer material into poly(3,4- ethylenedioxythiophene monomer), a quantum dot is quantum dots of zinc sulfide, zinc selenide, cadmium sulfide, cadmium selenide, cadmium telluride, mercury sulfide, mercury selenide, mercury telluride or core-shell nanometer structured cadmium selenide-zinc sulfide, cadmium sulfide-zinc sulfide, cadmium sulfide-zinc selenide and graphene thereof and the like, and the negative electrode is glass or polyethylene terephthalate (PET) with a layer of indium tin oxide (ITO) or fluorine-doped tin oxide (FTO) or graphene.

Description

technical field [0001] The invention belongs to the field of quantum dot light-emitting diode devices, in particular to a three-layer structure high-efficiency quantum dot light-emitting diode of a self-assembled polymer hole buffer transport layer. Background technique [0002] Colloidal inorganic quantum dots with precisely controlled morphology and composition have unique chemical and physical properties and are used in light-emitting devices, solar cells, photodetectors and other devices. Despite improvements in quantum dot synthesis and device architecture, difficulties remain in fabricating high-performance solid-state devices using scheme-processed colloidal stacking. [0003] Quantum dot light-emitting diodes (QLEDs) with single-layer and double-layer structures have been mentioned in many reports. The actual performance of a single-layer quantum dot light-emitting diode that utilizes a functional monolayer that mixes transport and emission at the same time is far...

Claims

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Application Information

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IPC IPC(8): H01L51/50
CPCH10K50/115H10K50/16H10K50/15
Inventor 卡安纳王昕陈静雷威张晓兵
Owner SOUTHEAST UNIV
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