Inverted type full inorganic nanometer oxide quantum dot light-emitting diode and manufacturing method thereof

Abstract

The invention discloses an inverted type full inorganic nanometer oxide quantum dot light-emitting diode and a manufacturing method of the inverted type full inorganic nanometer oxide quantum dot light-emitting diode. The inverted type full inorganic nanometer oxide quantum dot light-emitting diode comprises a cathode, an electronic transmission layer, a hole transmission layer, a quantum dot light-emitting layer and an anode. One end of the quantum dot light-emitting layer is connected with the hole transmission layer connected with the anode, and the other end of the quantum dot light-emitting layer is connected with the electronic transmission layer connected with the cathode. Titanium dioxide is adopted as the electronic transmission layer, and nickel oxide is adopted as the hole transmission layer. The manufacturing method comprises the following steps that the cathode is manufactured on a glass sheet, and the cathode is coated with titanium dioxide precursor solutions in a spin mode to manufacture the inorganic electronic transmission layer; quantum dots are manufactured in a high temperature metal decomposition method, and the quantum dot light-emitting layer is manufactured on the electronic transmission layer; the nickel oxide is manufactured on the light-emitting layer as the hole transmission layer; the anode is manufactured on the hole transmission layer. According to the light-emitting diode, a light-emitting face is the front face, the inverted type structure and inorganic materials can reduce sensitivity of the light-emitting diode to oxygen and water, and the light-emitting service life of the light-emitting diode is prolonged under the same condition.

Description

technical field [0001] The invention belongs to the field of quantum dot light-emitting diode devices, and in particular relates to a trans-type all-inorganic nano-oxide quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QD-LED) is a new type of electroluminescent display device that uses quantum dot materials as a light-emitting layer in light-emitting diodes. Compared with organic light-emitting materials, quantum dots have many special luminescent characteristics, which mainly include narrow luminescence spectrum, wide absorption spectrum, high excitation photon efficiency, good light resistance, controllable energy band (can be optimized by quantum dot size) and solution processing process Compatibility is very good. Another advantage of quantum dots is that they can be based on any material, including glass and plastic. Therefore, the research of quantum dots has attracted more and more a...

AI Technical Summary

Problems solved by technology

Organic electron transport layers (ETLs) composed of vacuum-deposited small molecules are widely used for equilibration, however, these small molecule ETLs are less thermally stable and more affected by water and oxygen than inorganic quantum dot light-emitting layers.

At present, a lot of work is mainly used to replace organic hole transport layers with inorganic electron transport layers, so as to overcome the shortcomings of organic materials, especially their thermal instability and easy degradation by water and oxygen.

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