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Method for preparing polycrystalline doping molybdenum zinc oxide transparent conductive film

A transparent conductive film, zinc oxide technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve problems such as high valence state difference, and achieve the effect of good process stability

Inactive Publication Date: 2008-04-09
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, the research on the preparation of molybdenum-doped zinc oxide ZnO:Mo(ZMO) transparent conductive oxide films with high valence difference is a research goal with great application value, and there is no report of such research results so far.

Method used

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  • Method for preparing polycrystalline doping molybdenum zinc oxide transparent conductive film
  • Method for preparing polycrystalline doping molybdenum zinc oxide transparent conductive film
  • Method for preparing polycrystalline doping molybdenum zinc oxide transparent conductive film

Examples

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Embodiment 1

[0034] Example 1, preparation of zinc-molybdenum metal mosaic target: at a temperature of 450°C, Zn metal with a purity of 99.99% was melted into a target, and molybdenum wire with the same purity of 99.99% was embedded uniformly and symmetrically at 2at%. The target diameter was 60mm and a thickness of 3mm. The substrate is a common glass slide, which has been washed by pure water, alcohol and acetone ultrasonic waves for 15 minutes each.

[0035] Substrate temperature: 200°C.

[0036] The distance between the target and the substrate was fixed at 130 mm.

[0037] Before film deposition, the reaction chamber was evacuated to less than 2×10 -3 Pa, then the O through the variable air pilot valve 2 And Ar gas into the reaction chamber. The working pressure in the reaction chamber is 2.5×10 -1 Pa, sputtering current is 200mA, sputtering voltage is 150-160V, control O 2 The percentage of reaction gas 5.0%. The films were prepared on ordinary glass slides.

[0038] Th...

Embodiment 2

[0039] Example 2, at a substrate temperature of 200°C, the same method as in Example 1 was used to prepare a polycrystalline ZMO thin film under the following conditions: the O 2 and Ar gas into the reaction chamber and control the O 2 The percentage of P(O 2 ) is 10%. The sputtering time is 60 minutes, and the film thickness is 150 nm. The resistivity of the prepared ZMO film is 5.54×10 -3 Ω·cm.

Embodiment 3

[0041] Change the percentage of molybdenum to zinc in the zinc-molybdenum metal target: 1.2% and 1.5% respectively, and the rest of the preparation conditions are the same as in Example 1. Its X-ray diffraction pattern is shown in Figure 2.

[0042] The thickness d of the film was measured with a surface profiler (Kosaka ET3000 type), and the sheet resistance R of the sample was measured with a four-probe instrument (BD-90 type) 0 The resistivity ρ of the film was thus calculated. At room temperature, the Hall effect of the thin film was measured using a Hall tester (BIO-RadMicroscience HL5500 Hall system), so as to obtain the carrier mobility and carrier concentration of the thin film. The crystal structure of the film was analyzed by X-ray diffractometer (XRD) (Rigaku D / max-rB type, CuKa ray source); the surface morphology of the film was analyzed by atomic force microscope (AFM) (Park Scientific Instrument, AutoProbe CP, USA). appearance.

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Abstract

The invention belongs to the transparent conductive film technical field, in particular to a preparation method of a polycrystalline molybdenum doped zinc oxide transparent conductive film. The steps of the method are that: a zinc inlay molybdenum target is taken as a target and ordinary glass is taken as substrate, the substrate temperature is 100-300 DEG C, through a reactive dc magnetron sputtering method, an Ar ion beam bombards and sputters the target, the sputtering current is 150-300mA, the sputtering voltage is 100-400 V, the work pressure of a reaction chamber is 0.45-2.5 Pa, the percentage of the parcial pressure P (O 2 ) = Po 2 / (Po 2 +P Ar ) of the reactive gas O 2 is 4.0 to 10.0%, the sputtering time is 40-100 minutes, thus forming the molybdenum-doped zinc oxide transparent conductive film with a polycrystalline structure. The film thickness is 100-250 nm. The film prepared by the invention is characterized by low resistivity, high visible light range of optical transparency and high carrier mobility. The invention has industrial production prospect and has good technological stability. The invention is a novel method in the preparation of ZMO transparent conductive oxide films and the guarantee of excellent quality of parts produced by films.

Description

technical field [0001] The invention belongs to the technical field of transparent conductive films, in particular to a method for preparing a polycrystalline molybdenum-doped zinc oxide ZnO:Mo (ZMO) transparent conductive oxide film. Background technique [0002] Transparent conductive oxide (TCO) thin films are highly degenerate semiconductor materials that are widely used in optoelectronic devices (such as flat panel displays and solar cells) due to their unique combination of transparency and conductivity. One of the most representative materials is In 2 o 3 :Sn(ITO), SnO 2 :F and ZnO:Al(AZO) films. TCO thin film materials generally have a high carrier concentration, the Fermi level (E F ) at the conduction band level (E C ) above, the resistivity can be as low as 10 -4 Ω·cm; and has a wide band gap (> 3eV), so that the film has a high transmittance (> 80%) in the range of visible light and near-infrared light. [0003] The carrier concentration of the curre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/54C23C14/08
Inventor 沈杰王三坡章壮健
Owner FUDAN UNIV
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