Epitaxial structure of near-infrared VCSEL laser and manufacturing method thereof

Abstract

The present invention provides an epitaxial structure of a near-infrared VCSEL laser, comprising a GaAs substrate, on which a GaAs buffer layer, an N-type doped DBR, an active layer, an oxidation confinement layer, and a P-type doped DBR are sequentially deposited. DBR and ohmic contact layer, the active layer includes a confinement layer, a waveguide layer, a quantum well, a symmetrical waveguide layer and a symmetrical confinement layer from bottom to top, and the quantum well is composed of multiple groups of quantum well layers, and two adjacent groups of quantum wells A thick barrier layer is provided between the well layers, and the thickness of the thick barrier layer is greater than 50nm. The epitaxial structure of the near-infrared VCSEL laser reduces the leakage loss of carriers by inserting multiple thick barrier layers in the quantum wells of the active region, increases the recombination probability of carriers in the active region, and increases the differential gain of the active region , thereby increasing the radiation power of the VCSEL laser, and at the same time increasing the confinement factor of photons in the active region, and improving the response rate of the VCSEL laser.

Description

technical field [0001] The invention relates to a near-infrared VCSEL laser, in particular to an epitaxial structure and a preparation method of the near-infrared VCSEL laser. Background technique [0002] The vertical cavity surface emitting laser (VCSEL) forms a resonant cavity through a Bragg reflector (DBR), and the light is emitted from the direction perpendicular to the surface of the semiconductor substrate. Compared with edge-emitting semiconductor lasers, VCSEL has no optical cavity surface damage, has low threshold current, dynamic single-mode operation, small far-field divergence angle, near-circular spot and light direction perpendicular to the substrate surface, and has the characteristics of optical fiber coupling efficiency. High, easy to integrate two-dimensional array, so VCSEL has a wide range of applications in optical interconnection, optical communication, optical signal processing, WDM optical fiber communication, neural network, and computer chips. Ba...

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Problems solved by technology

[0005] The disadvantage of using this process is that the optical power of VCSEL is relatively small, and it is difficult to meet the application requirements of most near-infrared sensors.

The reason for the above defects is that the above method is that the carrier gain in the active area is not large enough, which may be caused by the growth quality of the material in the active area, or may be caused by the unreasonable design of the MQW structure in the active area.

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