InGaN quantum dot epitaxial wafer prepared through substrate with atom step and preparation method thereof
A technology of quantum dots and epitaxial wafers, applied in the field of InGaN quantum dot light-emitting electrical device epitaxial wafers and its preparation, can solve the problems of high In composition InGaN material growth difficulties, luminous efficiency decline, etc., achieve high luminous efficiency, improve overlap The effect of degree and luminosity uniformity
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[0025] The invention discloses an epitaxial wafer of an InGaN quantum dot light-emitting electrical device prepared by using a substrate with atomic steps, and the preparation method includes the following steps:
[0026] Take a substrate 21 with atomic steps, the substrate 21 can be a sapphire wafer, a silicon wafer, a silicon carbide wafer, or a gallium nitride wafer, and the chamfer angle of the substrate surface is θ. o o , the chamfered angle refers to the included angle between the crystallographic direction of the substrate 21 surface and the surface normal direction.
[0027] An N-type layer 22 , an active region and a P-type layer 25 are sequentially grown on the substrate 21 by using a metal organic chemical vapor deposition (MOCVD) method.
[0028] The active region is n (n≥1) cycles of In M Ga 1-M N quantum dot layer 23 and In N Ga 1-N The light-emitting active region formed by the N barrier layer 24 (0N). The atomic steps on the surface of the substrate 21 wi...
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