InGaN quantum dot epitaxial wafer prepared through substrate with atom step and preparation method thereof

Abstract

The invention discloses an InGaN quantum dot photoelectric device epitaxial wafer prepared through a substrate with an atom step. The InGaN quantum dot photoelectric device epitaxial wafer comprises the substrate with the atom step, an N-type layer grows on the substrate, the N-type layer has the same atom step as the substrate, an active area grows on the N-type layer, and a P-type layer is arranged on the active area. The atom step is a regular progressive-increasing type step, and the chamfer angle is larger than 0.05 degree and smaller than 10 degrees. Distribution of quantum dots is controlled through the atom step on the surface of the substrate, and through the utilization of changes of the chamfer angle formed by the atom step, InGaN quantum dot active areas of different widths and densities can be prepared to meet more requirements.

Description

technical field [0001] The invention relates to an epitaxial wafer of an InGaN quantum dot light-emitting device and a preparation method thereof, in particular to an epitaxial wafer of an InGaN quantum dot light-emitting device prepared by using atomic steps on the surface of a substrate and a preparation method thereof. Background technique [0002] GaN-based light-emitting devices mainly include GaN-based lasers (LDs) and GaN-based light-emitting diodes (LEDs). At present, the methods for preparing InGaN quantum dots are mainly divided into two categories: one is through a mask, that is, a layer of mask is evaporated on the GaN layer, and then a window is etched on the mask, and InGaN is selected at the window. The other is self-organized growth, that is, two-dimensional growth of InGaN film is first formed, and the two-dimensional InGaN film is transformed into three-dimensional growth of InGaN quantum dots under the action of stress. [0003] Among the two methods, the...

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Problems solved by technology

However, due to the strong polarization effect of nitride materials, especially for the high In composition InxGa1-xN / GaN (x>0.2) quantum well structure, the large polarization electric field reduces the overlap of electron and hole wave functions, Moreover, it is very difficult to grow high-quality, high-In composition InGaN materials, so that when the wavelength of GaN light-emitting devices extends to the direction of green light, the luminous efficiency drops significantly.

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