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Epitaxial structure of blue-green light chip for phototherapy and preparation method thereof

An epitaxial structure, blue-green light technology, applied in the direction of phototherapy, semiconductor devices, electrical components, etc., can solve the problems that are not conducive to improving the effective radiation intensity of phototherapy instruments

Active Publication Date: 2021-07-06
BEIJING TRUWIN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the related technologies mentioned above, the inventor believes that the half-wave width of the light emitted by the GaN-based blue-green LED epitaxial wafer is relatively wide, which is not conducive to improving the effective irradiation intensity of the phototherapy instrument

Method used

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  • Epitaxial structure of blue-green light chip for phototherapy and preparation method thereof
  • Epitaxial structure of blue-green light chip for phototherapy and preparation method thereof
  • Epitaxial structure of blue-green light chip for phototherapy and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0056] refer to figure 2 , an epitaxial structure of a blue-green light chip for phototherapy, prepared according to the following steps:

[0057] (1) Using MOCVD equipment, under the conditions of 1050°C and 75Torr, a 41nm thick GaN layer and a 43nm thick GaAlN layer are alternately deposited on the substrate 6, and a GaN layer and a GaAlN layer constitute a pair of III-V group compounds Layer, after the deposition of the III-V group compound layer is completed, the reflective DBR layer 7 is obtained, wherein the substrate 6 is a sapphire substrate, and the doping concentration of the reflective DBR layer 7 is 0;

[0058] (2) Under the conditions of 1050°C and 75Torr, deposit a doping concentration of 1E19cm on the reflective DBR layer 7 -3 n-type GaN to obtain a first n-type GaN layer 8 with a thickness of 2000nm;

[0059] (3) Under the conditions of 750° C. and 250 Torr, alternately deposit 3 nm thick quantum well layer InGaN and 4 nm thick quantum barrier layer GaN on t...

Embodiment 12-15

[0068] As shown in Table 2, the difference between Examples 12-15 and Example 10 lies in the different doping concentrations of the layers.

[0069] The doping concentration of the layer of table two embodiment 12-15

[0070]

Embodiment 16

[0072] refer to image 3 , The difference between this embodiment and Embodiment 14 is that in step (8), firstly, under the conditions of 1075° C. and 75 Torr, a doping concentration of 1E20 cm is deposited on the second quantum well layer 132 -3 p-type AlGaN to obtain a p-type AlGaN layer 134 with a thickness of 70 nm; and then grow a second p-type GaN layer 133 on the p-type AlGaN layer 134 .

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Abstract

The invention relates to the technical field of electronic device manufacturing, and particularly discloses an epitaxial structure of a blue-green light chip for phototherapy and a preparation method thereof. The epitaxial structure of the blue-green light chip for phototherapy comprises a substrate, and a reflection DBR layer, a first n-type GaN layer, a first quantum well layer, a first p-type GaN layer, an emergent DBR layer, a tunnel junction and a GaN-based LED epitaxial wafer which are sequentially arranged on the substrate, the preparation method comprises the step of sequentially generating the reflection DBR layer, the first n-type GaN layer, the first quantum well layer, the first p-type GaN layer, the emergent DBR layer, the tunnel junction and the GaN-based LED epitaxial wafer on the substrate. The epitaxial structure of the blue-green light chip for phototherapy has the advantages of relatively large light emitting angle and relatively narrow half-wave width; in addition, the preparation method provided by the invention is helpful for reducing light loss.

Description

technical field [0001] This application relates to the field of electronic device manufacturing technology, more specifically, it relates to an epitaxial structure and preparation method of a blue-green light chip for phototherapy. Background technique [0002] Phototherapy is a method of preventing and treating diseases by using visible and invisible rays in sunlight and artificial light sources. The light source of the phototherapy instrument has a large luminous angle, which helps to improve the uniformity of the light source of the phototherapy instrument. The half-wave width of the light emitted by the light source of the phototherapy instrument is narrow. It helps to enhance the effective irradiance intensity of the light source of the phototherapy device. Therefore, choosing a suitable light source helps to improve the therapeutic effect of the phototherapy device. Some medical phototherapy devices use GaN-based blue-green LED epitaxial wafers as light sources. The st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/04H01L33/06H01L33/10H01L33/12H01L33/14H01L33/36H01L33/00A61N5/06
CPCH01L33/04H01L33/06H01L33/10H01L33/105H01L33/145H01L33/36H01L33/025H01L33/12H01L33/007A61N5/06H01L2933/0016A61N2005/065A61N2005/0662
Inventor 罗轶张健郭庆霞易斌吴雪
Owner BEIJING TRUWIN OPTOELECTRONICS
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