42results about How to "Increase light output power" patented technology

Provided is an optical fiber distributed type sound wave monitor system. Narrow-linewidth frequency-modulated lasers output by a frequency modulation DFB fiber laser are used as the light source of the optical fiber distributed type sound wave monitor system, the lasers output by the frequency modulation DFB fiber laser enter an acoustic optical modulator and are modulated to be pulse lasers through the acoustic optical modulator, the pulse lasers pass through a first optical amplifier and a first optical filter and then enter a second circulator and sensor fibers, the pulse lasers per unit can emit rayleigh scattering light within the range of the passed sensor fibers per unit length, and signals output by the second circulator pass through a second optical amplifier to enter a second optical filter and output backscattering rayleigh signals. The backscattering rayleigh signals between different unit lengths on one sensor fiber are interfered with the method of an interferometer, the interfered signals pass through electrical signals output by a second photoelectric detector and enter the optical fiber distributed type sound wave monitor demodulation system though a phase carrier demodulation module, and the change analysis of the phases of the sensor signals at corresponding positions is achieved.

The laser device includes a substrate; a Bragg reflector prepared on the substrate; a low limiting layer prepared on the Bragg reflector; a low waveguide layer prepared on the low limiting layer, and band gap wavelength of the low waveguide layer being as indium-gallium-arsenic-phosphor material in 1.2 micron; an active region prepared on the low waveguide layer; an up waveguide layer prepared on the active region, and band gap wavelength of the up waveguide layer being as indium-gallium-arsenic-phosphor material in 1.2 micron; an up limiting layer prepared on the up waveguide layer; an up Bragg reflector prepared at middle on the up limiting layer; being prepared on the up limiting layer, an ohmic contact layer is located at two sides of the up Bragg reflector; being prepared on the ohmic contact layer, an up electrode is located at two sides of the up Bragg reflector; a low electrode prepared underside of the substrate.

The invention relates to a fabrication method of a superluminescent diode chip. The method comprises the following steps of one-step epitaxy, ridge forming, secondary epitaxy, isolation region forming, P-type electrode evaporation, N-type electrode evaporation, alloy and film coating. The invention also relates to a superluminescent diode chip fabricated according to the fabrication method. The chip fabricated according to the invention has the characteristics of low polarization, high output power and low spectrum corrugation.

The invention discloses a liquid flow non-immersive measuring device and a sensing probe. The liquid flow non-immersive measuring device comprises the sensing probe and is characterized in that the sensing probe is connected with a circulator through an optical path, light emitted by a pump light source of 980nm is received by the circulator through a separator, optical signals output by the circulator is sent to a coupler through the separator, two optical signals are output by the coupler, one signal is sent to a first Faraday rotary mirror through a phase modulator, and the other signal is directly sent to a second Faraday rotary mirror; the optical signals output by the coupler are sent to a photoelectric detector, electric signals output by the photoelectric detector enter a phase carrier wave demodulating device, weak dynamic variation of the wave length of a DFB optical fiber laser is demodulated, and flow is calculated according to the variation of the wave length; the sensing probe relates to a section of asymmetric phase shifting optical fiber grating fixed on the outer wall of an oil pipe in the circumferential direction.

The invention provides a laser welding method. According to the method, a laser welding machine and a circuit board to be welded are provided, a plurality of bonding pads to be welded are arranged on the circuit board, the laser welding machine comprises a focusing head and a tin feeding head, the tin feeding head comprises a tin feeding end, the tin feeding end can feed a tin wire continuously, the tin feeding head is located between the focusing head and the bonding pads, before high-power light of the focusing head exits or while high-power light exits, a section of the tin wire is fed by the tin feeding head, and the tin wire, the focusing head and the bonding pads are located on the same straight line. According to the laser welding method, the welding speed is high, the welding precision is high, the requirement for control equipment is not high, the production cost is low, stability is improved greatly, and the laser welding method has high market value.

The invention relates to a side pump source of a vertical-cavity surface-emitting laser and a manufacturing method of the side pump source and relates to the technical field of semiconductor optoelectronics. The side pump source of the vertical-cavity surface-emitting laser comprises a large-channel heat sink in which refrigeration liquid is contained, wherein a horizontal installation plane and an insulating heat sink of serially connected structure, metal films at the surface of the heat sink, gold wire leads and a vertical-cavity surface-emitting laser array are arranged at the upper end of the heat sink. With the adoption of the side pump source of the vertical-cavity surface-emitting laser, a light emitting area is increased when a current is not increased, power is increased, an integration degree is high, and a light beam is good in quality.

The invention discloses a dual-layer nanometer array-structure inverted ultraviolet LED and a fabrication method thereof. The ultraviolet LED comprises a support, an LED chip, an organic polymer layerand a lens, wherein the lens is arranged at the top of the support, the LED chip and the organic polymer layer both are arranged in an enclosed space encircled by the support and the lens, the LED chip is arranged at the bottom of the support and comprises a sapphire layer with a first nanometer array structure, the sapphire layer is arranged at one side far away from the bottom of the support, the LED chip is coated with the organic polymer layer, and a second nanometer array structure is arranged at one side, far away from the sapphire layer, of the organic polymer layer. In the dual-layernanometer array structure comprising the high-transmittance organic polymer material and sapphire, vacuum is maintained between the organic polymer material and the sapphire, the limitation of ultraviolet light total reflection of a sapphire/air interface on light extraction efficiency is substantially reduced, so that the light giving-out power of an LED is remarkably improved.

The invention relates to a method for optimizing photonic crystal surface emitting laser, belonging to the technical field of the semiconductor optoelectronics. In the method, an oxidized aperture and a photonic crystal defect aperture are horizontally matched and coupled on the basis of transverse coupling of an oxidation restricted type surface emitting laser and a two-dimensional photonic crystal. By the optimization of the relationship of the oxidized aperture and the photonic crystal defect aperture, the device whose oxidized aperture is greater than the photonic crystal defect aperture by one photonic crystal air hole diameter is prepared to allow the device to work in low threshold current, small series resistance and high single-mode output power state. According to the invention, the method can be applied to oxidation limit photonic crystal surface emitting lasers of different materials and cannot be influenced by the wavelength range.

The embodiment of the invention discloses a vertical distribution feedback surface emitting laser and a preparation method thereof. The laser comprises a first cavity surface, a periodic distribution feedback structure and a second cavity surface; the periodic distributed feedback structure comprises a plurality of distributed feedback structures along a first direction, each distributed feedback structure comprises an oxide layer, an active region and a tunnel junction, the plurality of oxide layers are arranged to replace a second-order grating to adjust uniform distribution of light, the oxide layers are arranged to be high-impedance structures, the current flowing direction is controlled, the light emitting power is improved, and further, the period of the periodical distribution feedback structure is set to be integral multiples of the half-wavelength of the effective emergent wavelength of the vertical distribution feedback surface emitting laser, the emergent wavelength range of the laser is limited, the spectral line width is reduced, and the wavelength stability of the laser is improved. The technical problems that in the prior art, a laser is poor in wavelength stability, low in power density, complex in structure and difficult to achieve mass production and narrow linewidth application requirements are solved.

The invention relates to the field of laser application, in particular to the field of the laser application with more strict temperature change requirement. The invention provides a laser device wide-temperature circuit which achieves that the size is small, and the upper limit of current is set with high accuracy, dynamic regulation is achieved with drive current, laser power is controlled with high accuracy, and response to the temperature change is minimal. The laser device wide-temperature circuit comprises a bias module, a laser power signal module, a power duty radio module, and a drive current module, wherein the bias module and the laser power signal module are both connected with the power duty radio module, and the power duty radio module is connected with the drive current module. According to the laser device wide-temperature circuit, a laser drive circuit with small size, wide temperature and low temperature drift is achieved. The laser device wide-temperature circuit is high in integration level, strong in transportability, easy to process and assemble, and economical in cost. The laser device wide-temperature circuit can be used in the fields of military, measurement and other fields with more strict requirements on size and which need a wider range of temperature.

The invention relates to the field of ultraviolet sources, and in particular relates to a deep ultraviolet source of electron beam activated fluorescent powder. The electron beam activated fluorescentpowder comprises a fluorescent screen, an electronic gun and a glass shell, wherein the fluorescent screen comprises quartz sand and an ultraviolet fluorescent layer coated to the quartz glass; the electronic gun is arranged in the glass shell, electron beams generated by the electronic gun faces the ultraviolet fluorescent powder layer, and the ultraviolet fluorescent powder layer sends out ultraviolet light through the quartz sand under electron beam activation; and the fluorescent screen is hermetically connected to the glass shell through transitional glass. The deep ultraviolet source provided by the invention is free from pollution, low in cost and easy for scaled production.

The invention discloses a manufacturing method of an electrically injected GaN-based resonant cavity, which relates to a GaN-based resonant cavity luminescent device. The method comprises the steps of growing a p type current expanding layer ITO on a GaN-based epitaxial wafer with a sapphire substrate, sequentially carrying out etching, polishing and ICP (Inductively Coupled Plasma) etching on the surface of the p type current expanding layer ITO to form a n type table facet, manufacturing a current limiting layer, a n type metal contact layer, a p type metal contact layer and a top dielectric film DBR (Distributed Bragg Reflector), bonding the components with a temporary substrate, removing the sapphire substrate by a laser lift-off technology, grinding and polishing the GaN surface subjected to laser lift-off, growing a bottom dielectric film DBR on the polished GaN surface, bonding the obtained component with a permanent substrate, and removing the temporary substrate, thus completing the manufacturing of the electrically injected GaN-based resonant cavity. The high-performance GaN-based resonant cavity is realized by adopting the two high-quality dielectric film DBRs and the low-loss p type current expanding layer ITO.

The open-loop fiber optic gyroscope signal detection method using 3×3 couplers is characterized in that three detectors are used in the signal detection system, and the signal detection model is obtained by accurately analyzing the signals of the detectors.

The invention provides an epitaxial structure of a deep ultraviolet LED chip, which includes a P-type GaN layer, a P-type AlGaN layer, a multiple quantum well active layer, an N-type AlGaN layer, an AlN layer and a sapphire substrate which are arranged in order of superposition. The structure is characterized in that the multiple quantum well active layer and the N-type AlGaN layer together form an adjusting layer, the adjusting layer has at least one inclined side surface, the included angle between the inclined side surface and the horizontal section near the center side of the adjusting layer is a top etching included angle, and the top etching included angle is 28-40 degree controllable. The invention also provides a preparation method of the epitaxial structure of the deep ultravioletLED chip, wherein the etching angle and the etching depth of the top are adjusted by controlling different dry etching parameters; the method can effectively extract the deep ultraviolet light of TEand TM mode, and improve the light-emitting efficiency of the deep ultraviolet LED.

The invention discloses a high-power LED backlight module. The high-power LED backlight module comprises a plurality of LED lamps arranged on the surface of a partition board at intervals and connected in series, a heat transfer plate, a semiconductor refrigerator, a radiator and a framework. The upper surface of the heat transfer plate is attached to the lower surface of the partition board. The hot end of the semiconductor refrigerator is attached to the lower surface of the heat transfer plate. The upper surface of the radiator is attached to the cold end of the semiconductor refrigerator. An accommodating cavity is formed in the framework, through holes are formed in the bottom of the framework, and a display screen is arranged on the front portion of the framework. The radiator, the semiconductor refrigerator, the heat transfer plate and the partition board are sequentially arranged in the accommodating cavity. The lower surface of the radiator is arranged on the bottom of the accommodating cavity. The LED lamps face the display screen. By the adoption of the high-power LED backlight module, heat dissipation of a high-power LED light emission array is achieved, and accordingly the light emission efficiency of the backlight module is improved and thinning of the backlight module is achieved.

The invention belongs to the field of lasers, and particularly relates to a laser-based frequency tripling device and a laser system. The laser-based frequency tripling device comprises a first frequency doubling unit arranged at a first preset position; a second frequency doubling unit arranged at a second preset position, wherein the first frequency doubling unit and the second frequency doubling unit are symmetrically arranged; a nonlinear crystal arranged between the first frequency doubling unit and the second frequency doubling unit; a third frequency doubling unit arranged at a third preset position; a fourth frequency doubling unit arranged at a fourth preset position, wherein the third frequency doubling unit and the fourth frequency doubling unit are symmetrically arranged; and a nonlinear sum frequency crystal arranged between the third frequency doubling unit and the fourth frequency doubling unit.

The invention discloses a light source with a small beam angle. The light source comprises a semiconductor light-emitting element and a lens, the semiconductor light-emitting element is embedded in the lens and is seamlessly combined with the lens. The lens is provided with a top surface and a side surface connected with the top surface; the semiconductor light-emitting element is provided with more than one light-emitting surface, at least one light-emitting surface is arranged towards the top surface of the lens, and at least part of light emitted to the side surface of the lens by the semiconductor light-emitting element can be reflected by the side surface of the lens and then transmitted out along the optical axis. The light source with the small beam angle is simple in structure, andthe light utilization efficiency in reflective lighting application is greatly improved; compared with a light source without a lens, the light emitting power is improved by more than 10%; compared with a secondary lens, the primary lens is small in size and light in weight, seamless connection with a chip is achieved in the light source packaging process, installation is convenient, and the light emitting rate is improved; meanwhile, the manufacturing process is simple, convenient, low in cost, small in size and suitable for large-scale manufacturing and application.