A kind of fabrication method of electric injection gan-based resonator

A manufacturing method and resonant cavity technology, applied in the field of GaN-based resonant cavity light-emitting devices, can solve the problems of difficult lateral expansion of holes, decrease of cavity quality factor, and affecting the performance of resonant cavity, so as to achieve good electrical and optical characteristics and improve Q value, performance-enhancing effects

Active Publication Date: 2016-02-17
XIAMEN UNIV
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Problems solved by technology

Secondly, the extremely low carrier concentration of p-GaN material makes it difficult for holes to expand laterally effectively in the p-type layer, so the semi-transparent conductive layer ITO must be used as the current s

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  • A kind of fabrication method of electric injection gan-based resonator
  • A kind of fabrication method of electric injection gan-based resonator
  • A kind of fabrication method of electric injection gan-based resonator

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[0022] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following takes a GaN-based RCLED as an example and refers to the accompanying drawings to further describe the present invention in detail.

[0023] See Figure 1-9 , The embodiment of the present invention includes the following steps:

[0024] 1) Using the MOCVD method on the sapphire substrate 11, grow a low-temperature buffer layer, an undoped GaN buffer layer, a Si-doped GaN layer, an InGaN / GaN multiple quantum well active layer, a Mg-doped AlGaN layer, and a Mg-doped layer in sequence. GaN-based epitaxial layer 12 such as a GaN layer, and high-temperature annealing is performed after the epitaxial wafer growth is completed to increase the hole concentration;

[0025] 2) Using electron beam evaporation equipment to prepare a 250nm thick p-type current spreading layer ITO13 on the above epitaxial wafer, the AFM scan of the grown ITO surface is as follows Figure 7 As...

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Abstract

The invention discloses a manufacturing method of an electrically injected GaN-based resonant cavity, which relates to a GaN-based resonant cavity luminescent device. The method comprises the steps of growing a p type current expanding layer ITO on a GaN-based epitaxial wafer with a sapphire substrate, sequentially carrying out etching, polishing and ICP (Inductively Coupled Plasma) etching on the surface of the p type current expanding layer ITO to form a n type table facet, manufacturing a current limiting layer, a n type metal contact layer, a p type metal contact layer and a top dielectric film DBR (Distributed Bragg Reflector), bonding the components with a temporary substrate, removing the sapphire substrate by a laser lift-off technology, grinding and polishing the GaN surface subjected to laser lift-off, growing a bottom dielectric film DBR on the polished GaN surface, bonding the obtained component with a permanent substrate, and removing the temporary substrate, thus completing the manufacturing of the electrically injected GaN-based resonant cavity. The high-performance GaN-based resonant cavity is realized by adopting the two high-quality dielectric film DBRs and the low-loss p type current expanding layer ITO.

Description

technical field [0001] The invention relates to a GaN-based resonant cavity light-emitting device, in particular to a GaN-based resonator that uses two high-quality dielectric films DBR and a p-type current expansion layer ITO with less loss to realize a high-performance GaN-based resonant cavity. cavity method. Background technique [0002] GaN-based semiconductor materials mainly include GaN, InN, AlN and their ternary or quaternary alloys, which have stable mechanical and chemical properties, and belong to the direct transition energy band structure, and can emit light covering the entire visible light band. Ideal material. These devices have broad application prospects in the fields of general lighting, optical fiber communication, high-density optical storage, laser display and laser printing, among which GaN-based resonant cavity light-emitting diodes (RCLEDs) and vertical cavity surface-emitting lasers (VCSELs) are currently research hotspots. [0003] Due to the u...

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Application Information

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IPC IPC(8): H01L33/00H01S5/10
Inventor 张保平胡晓龙刘文杰张江勇应磊莹
Owner XIAMEN UNIV
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