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High-frequency surface acoustic wave resonator and preparation method thereof

A high-frequency surface acoustic wave and resonator technology, applied in the direction of electrical components, impedance networks, etc., can solve the problem of low operating frequency of surface acoustic wave resonators, achieve the effect of improving electromechanical coupling coefficient and Q value, and suppressing clutter

Active Publication Date: 2019-08-16
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a high-frequency surface acoustic wave resonator and its preparation method, which is used to solve the problem of low operating frequency of the existing surface acoustic wave resonator

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  • High-frequency surface acoustic wave resonator and preparation method thereof
  • High-frequency surface acoustic wave resonator and preparation method thereof
  • High-frequency surface acoustic wave resonator and preparation method thereof

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Embodiment Construction

[0041] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0042] see Figure 1 to Figure 6 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic concept of the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the shape, quantity and proportion of each component can be changed arbitrarily during actual implementation, and ...

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Abstract

The invention provides a high-frequency surface acoustic wave resonator and a preparation method thereof. The high-frequency surface acoustic wave resonator comprises a high-wave-velocity supporting substrate, a piezoelectric film located on the upper surface of the high-wave-velocity supporting substrate and a top electrode located on the upper surface of the piezoelectric film, wherein the wavevelocity of bulk waves propagated in the high-wave-velocity support substrate is greater than the wave velocity of target elastic waves propagated in the piezoelectric film. According to the high-frequency surface acoustic wave resonator and the preparation method thereof provided by the invention, the problem that the working frequency of an existing surface acoustic wave resonator is relativelylow is solved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, in particular to a high-frequency surface acoustic wave resonator and a preparation method thereof. Background technique [0002] Although acoustic wave resonators (acoustic wave filters) are widely used in radio frequency communication, with the continuous development of radio frequency communication technology, especially the arrival of 5G communication, it requires acoustic wave resonators to work at higher frequencies. [0003] Existing acoustic wave resonators are mainly divided into two types: surface acoustic wave resonators and bulk acoustic wave resonators. The operating frequency of the device is an urgent technical problem to be solved by those skilled in the art. Contents of the invention [0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a high-frequency surface acoustic wave resonator and a prep...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H3/04H03H3/02
CPCH03H9/171H03H9/02015H03H3/02H03H3/04H03H2003/023H03H2003/0407H03H9/02228H03H9/14594H03H9/02574H03H9/02866H03H9/02551H03H9/02559H03H9/13H03H9/25
Inventor 欧欣张师斌周鸿燕王成立郑鹏程黄凯
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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