40results about How to "Improve power handling capacity" patented technology

The invention discloses a surface acoustic wave filter with high power endurance, which comprises a plurality of surface acoustic wave resonators, wherein each of the surface acoustic wave resonators comprises an interdigital transducer and a reflecting grating; at least part of surface acoustic wave resonators are high-resistance surface acoustic wave resonators; two interdigital transducers are arranged in parallel for the high-resistance surface acoustic wave resonators; two reflecting gratings are shared by two interdigital transducers; an output bus bar of a first interdigital transducer is electrically connected with an input bus bar of a second interdigital transducer; the input bus bar of the first interdigital transducer and the output bus bar of the second interdigital transducer are located at the same end; and the two reflecting gratings are located outside the two interdigital transducers. Under same resistance, the high-resistance surface acoustic wave resonators have more finger pairs or shorter pore diameters, the current on each transducer finger is reduced, and the power endurance of the surface acoustic wave filter is greatly increased under the condition of unchanging the electric property of the surface acoustic wave filter.

The invention discloses a phased array radar strong electromagnetic pulse shield, including more than one protective layer and support structure layers located at two sides of the protective layers; each protective layer includes a frequency selection layer, semiconductor diodes loaded on the frequency selection layer and a direct current bias module connected with a radar transmitter, wherein the direct current bias module is connected with the frequency selection layer; the frequency selection layer includes an upper conducting layer, a substrate and a lower conducting layer, wherein the upper conducting layer includes upper conducting layer units, and the lower conducting layer includes lower conducting layer units; each upper conducting layer unit includes a metal square frame in which four square metal sheets are arranged, and a rectangular metal sheet is arranged between adjacent metal sheets; 16 semiconductor diodes are arranged on each upper conducting layer unit, wherein 8 semiconductor diodes are located between the rectangular metal sheets and the square metal sheets, and 8 semiconductor diodes are located between the square metal sheets and the metal square frame; and the lower conducting layers include cross-shaped metal sheets. The phased array radar strong electromagnetic pulse shield provided by the invention can effectively protect a phased array radar.

The invention discloses an optical isolation method. Forward light is split into two polarized light components in a polarization light-splitting device at the incident end, light paths of the two polarized light components are intersected after the two polarized light components are emergent from the polarization light-splitting device at the incident end, a polarization rotator is arranged at the intersection, the two polarized light components are intersected in internal space of the polarization rotator, backward light after passing the polarization rotator deflects angularly and deflect parallelly in the polarization light-splitting device at the incident end, and the backward light is separated from the forward light paths. The invention further discloses an optical isolation device which comprises an input optical fiber, an output optical fiber, two collimating lenses, two polarization light-splitting devices and one polarization rotator. Power bearing capacity can be improved, requirements on clear aperture of the Faraday rotator are lowered, and package size of the device is reduced.

The invention discloses an ultra-wide-band double-ring high-power ferrite phase shifter and belongs to the field of phase shifters. The phase shifter comprises a dielectric slab, ferrites and a waveguide; the upper and lower surfaces of the dielectric slab are respectively provided with two ferrite layers in sequence; exciting wires penetrate through the two ferrite layers; a first-grade matched dielectric and a second-grade matched dielectric are arranged in an inner chamber of the waveguide; the two ends of the dielectric slab and the two ends of the ferrites are both sequentially connected with the first matched dielectric and the second matched dielectric. The phase shifter is as high as 33% in frequency band width, smaller than 1dB in loss, smaller than 1.5 in standing-wave ratio and larger than 420 degrees in phase shift; meanwhile, the double-ring high-power ferrite phase shifter is in a structural form that a ceramic dielectric is loaded between double ferrite rings, so that the phase shifter has the advantages of high power bearing capacity, low insertion loss, wide frequency band and high finished product rate in processing and lot production.

An yttrium iron garnet ferrite material and a preparation method thereof are disclosed. The chemical formula of the material is Y<3-x-y-z>GdxCayCuzFe<5-a-b-c>InaVbAlcO12. The preparation method mainlyincludes mixing ball milling; pre-firing; secondary ball milling; granulation molding; and sintering. The main advantages are that the prepared ferrite material has fine and uniform grains, which helps to obtain a dense microstructure, thereby improving the high-power endurance of the material; the material is suitable for the use of various high-power isolators in communication base stations; through Cu<2+> doping, the sintering temperature of the material is reduced properly, which is beneficial to material mass production.

The invention relates to a phase change cooling-based optical fiber cooling device for a fiber laser. The device comprises a cooling heat sink (1). An optical fiber groove (12) is arranged on the cooling heat sink (1). A gain optical fiber (13) of which the coating layer is removed is fixed in the optical fiber groove (12). The device is characterized in that the a phase change material (14) fillsaround the gain optical fiber (13) in the optical fiber groove (12) and completely wraps the gain optical fiber (13) in the optical fiber groove (12); a cooling water channel (11) is arranged insidethe cooling heat sink (1); and the cooling water channel (11) is located below the optical fiber groove (12). In addition to the functions of a conventional fiber optic cooling heat sink, the phase change cooling-based optical fiber cooling device of the invention has the functions of preventing sudden temperature change and enduring higher power. With the device adopted, the capability of a fiberlaser system to withstand high-power can be increased, the risks of sudden temperature change can be reduced, and the reliability of the system can be ensured.

The invention discloses a novel microwave and continuous-wave high-power amplitude limiter. The novel microwave and continuous-wave high-power amplitude limiter comprises a microwave power coupler, a microwave power detector, a detection signal amplifier, a threshold comparator, a PIN switch driver, a microwave high-power PIN switch and a PIN pulse amplitude limiter; the output end of the microwave power coupler is respectively connected to the input end of the microwave high-power PIN switch and the input end of the microwave power detector; the microwave power detector is connected to the input end of the PIN pulse amplitude limiter through the detection signal amplifier, the lagging threshold comparator, the PIN switch driver and the microwave high-power PIN switch sequentially; the design requirement of continuous-wave high-power PIN pulse amplitude limiting is reduced; the power bearing capability of a microwave receiving system to microwave and continuous-wave or broad-pulse broad-power signals can be improved; the problem that the bearing power of the traditional microwave and continuous-wave high-power amplitude limiter can be solved; and the reliability of the microwave receiving system is improved.

The invention discloses a spinel Li-series ferrite material for an x-band to millimeter wave-band lock phase shifter, which has a chemical formula: Li0.5(1-a+b-c-d-e)ZnaMgeTibCucCodBinMnmFe0.5(5-a-3b-c-d-e)-m-n-sigma O4, wherein a is more than or equal to 0 and less than or equal to 0.4; b is more than or equal to 0 and less than or equal to 0.5; c is more than or equal to 0.002 and less than or equal to 0.006; d is more than or equal to 0.002 and less than or equal to 0.008; e is more than or equal to 0 and less than or equal to 0.5; m is more than or equal to 0.03 and less than or equal to 0.08; n is more than or equal to 0.002 and less than or equal to 0.006; sigma is an iron lack amount, and is more than or equal to 0.02 and less than or equal to 0.08. According to the spinel Li-seriesferrite material, a small amount of Cu<2+> replaces Li<1+> and Fe<3+> of the Li0.5Fe2.5O4 system, thereby reducing the coercive force of the material and increasing the remanence ratio of the material; an appropriate amount of Co<3+> is added for improving the power bearing capacity of the material. When the residual magnetic induction intensity Br of the microwave ferrite material is between 148mT and 343 mT, the spin wave line width deltaHk is 400 to 800 A/m, the coercive force Hc is less than or equal to 80 A/m, the remanence ratio R is 0.89 to 0.96, and the Curie temperature Tc is 450 to500 DEG C; moreover, the material has low electromagnetic loss characteristics and can be applied to the x-band to millimeter wave-band high-power lock phase shifter.

The invention discloses a high-performance piezoelectric ceramic and a preparation method thereof. The chemical general formula is Pb<n>Sr<m>(Mg<1/3>Nb<2/3>) Zr<y>Ti<x>O<3>+g%CeO<2>+h%PbO+b%CuO+d%Nb<2>O<5>, in the formula, 0.927 < = n < = 0.976, 0.024 < = m < = 0.073, 0.25 < = z < = 0.25, 0.35 < = y < = 0.35, 0.50 < = x < = 0.60, 0.4<=g<=0.7, 0.1<=h<=0.3, 0.1<=b<=0.3, 0.1<=d<=0.3. According to thepreparation method, Pb(Mg<1/3>Nb<2/3>)O<3> is synthesized, and adding into a PZT system is adopted to realize high intensity. The prepared product is high in density, high in power, high in efficiency, and high in quality. The piezoelectric ceramic is a modified hard PZT system piezoelectric ceramic, has high power bearing capacity and high comprehensive performance, can meet the requirements ofpeople, is extremely suitable for power type transducers with extremely high power and high driving requirements, and can be widely applied to sensors with extremely high power requirements such as high-power sound wave welding and fishery group detection.

The invention provides a microstrip thin-film resistor and a waveguide power synthesis network thereof, which can solve the problems of power synthesis and miniaturization of a power amplifier. The microstrip thin-film resistor comprises a ceramic substrate, a TaN resistor and a microstrip probe, the TaN resistor and the microstrip probe are arranged on the ceramic substrate, the TaN resistor clings to the edge of the ceramic substrate, the TaN resistor is connected with the microstrip probe, and the microstrip probe extends to the opposite edge of the ceramic substrate. The waveguide power synthesis network comprises a power distribution network, a power amplifier module and a power synthesis network, the power distribution network divides microwave signals into N paths of signals with the same amplitude and the same phase, each path of signals is amplified by the power amplifier module and then fed into the power synthesis network, and the microstrip thin-film resistor is arranged atthe joint of the power distribution network and the power synthesis network.

The present invention is suitable for the laser technology field, and provides a beam combiner. The beam combiner comprises a dual fiber collimator, a single fiber collimator and an optical filter. The dual fiber collimator comprises input fibers configured to transmit pump light, active fibers configured to perform light amplification and a first lens in non-interface welding with the end portions of the input fibers and the active fibers, wherein the welding end of the first lens is a plane, one end opposite to the welding end is a curve, the optical filter is arranged on the output light path of the curve, the pump light is reflected to the active fibers and transmits signal light, the single fiber collimator comprises output fibers and a second lens in non-interface welding with the end portion of the output fibers, and the non-welding end of the first lens is opposite to the non-welding end of the second lens. Because there is no interface between each fiber and each lens, there is no attenuation when the pump light and the signal light are transmitted between the fibers and the lens, and the optical coupling efficiency is high; the power bearing capacity is high, and the high-power transmission is realized; a fiber fusion-elongation technology is not employed, the fiber performance itself can be maintained, the pump conversion efficiency is high, and the product performance is stable.

The invention relates a high-power superconduction filter with a superimposed structure, which belongs to the technical field of microwave engineering. The filter comprises an incoming feeder installed in an encapsulation box, an outgoing feeder and a plurality of components, wherein, the components are opposite up and down and are put in a staggered manner; and each component comprises one or more harmonic oscillators which are arrayed sequentially and arranged on a substrate. The designed high-power superconduction filter is not limited by the size of a thin film superconductor, so that the superconduction filter with higher order and larger power bearing capacity can be prepared by using the thin film superconductor with limited size, so as to increase the power bearing capacity and the frequency response characteristic of the superconduction filter.

The invention relates to a vibrating diaphragm component processing device and processing method. The vibrating diaphragm component processing device comprises a bottom plate, a heating base arrangedbelow the bottom plate, a template sleeve fixedly arranged on the upper surface of the bottom plate, a processing die head fixedly arranged in the template sleeve, and an air pressure cavity that is mutually covered with the template sleeve to form a closed space, wherein a to-be-processed diaphragm is placed between the template sleeve and the air pressure cavity, the heating base is used for generating heat to soften the diaphragm, the air pressure cavity is used for forming a high pressure to fixedly attach the diaphragm to the upper surface of the processing die head, a steel ring is sleeved on the upper surface of the processing die head, the steel ring is glued with the lower surface of the diaphragm, and the steel ring is used for preventing the diaphragm in the processed vibratingdiaphragm component from shrinking. The vibrating diaphragm component manufactured by the vibrating diaphragm component processing device provided by the invention has the advantages of good power bearing capacity and waterproof performance.

The invention relates to a Schottky diode and a preparation method thereof. A Schottky diode includes: a substrate layer; a first structure and a second structure which are located on the substrate layer, wherein an isolation groove structure is arranged between the first structure and the second structure, the first structure comprises a first main body region and a cantilever beam extending fromthe first main body region, the second structure comprises a second main body region, and the second main body region comprises a heavily doped layer located on the substrate layer and a lightly doped layer located on the heavily doped layer; and a Schottky contact structure including a contact metal layer on the lightly doped layer and connected to an end portion of the cantilever beam and a passivation layer on the lightly doped layer and surrounding the contact metal layer, wherein the heavily doped layer has one or more regions in a position corresponding to the contact metal layer, the one or more regions being in contact with the lightly doped layer and forming depletion regions at the contact interface with corresponding regions of the lightly doped layer.

The invention discloses a 30W 12db aluminum nitride ceramic substrate attenuation slice which comprises an aluminum nitride ceramic substrate with the dimension of 5*5*1MM; the back conduction layer is printed on the back side of the aluminum nitride ceramic substrate; a leading wire and resistors are printed on the front side of the aluminum nitride ceramic substrate; the resistors are connected through the leading wire to form a TT-type attenuation circuit; the attenuation circuit is symmetrical along the central line of the aluminum nitride ceramic substrate; the output end and the input end of the attenuation circuit are respectively connected with a bonding pad; the two bonding pads are symmetrical along the central line of the aluminum nitride ceramic substrate. All performance indexes of the attenuation slice are fully considered in design, high frequency and non-inductance are achieved, the situation that the original attenuation slice is only applied to be in low frequency state is broken, the application requirement of the current 3G network can be met, and meanwhile, the series product line of the fixed resistor type attenuation slice is extended.

The invention discloses a thin-film low resistor and an L-type resistor adjusting method therefor and relates to the technical field of electronic products. The method comprises the steps of (S1) cutting a linear resistor fine-adjusting port in the position, close to a first end face electrode, of a first side end, wherein the extension direction of the resistor fine-adjusting port is parallel tothe first side end and the vertical interval between the resistor fine-adjusting port and the first end face electrode is 0.2-0.4mm; (S2) cutting an L-type resistor coarse-adjusting port in the position, close to a second end face electrode, of a second side end, wherein the resistor coarse-adjusting port is provided with communicating horizontal adjusting port and vertical adjusting port; the extension direction of the horizontal adjusting port is parallel to the second side end; the extension direction of the vertical adjusting port is vertical to the second side end; the vertical adjustingport extends along the direction far away from the second side end; and the vertical interval between the horizontal adjusting port and the second end face electrode is 0.2-0.4mm; and (S3) debugging the thin-film low resistor at the positions of the resistor fine-adjusting port and the resistor coarse-adjusting port. The thin-film low resistor prepared by adopting the method is high in heat dissipation capability.

The invention provides a strip line circulator and a TR assembly. The strip line circulator comprises a first shell; the second shell is used for being assembled with the first shell; the cover body is used for being assembled with the second shell; a first cavity is formed between the first shell and the second shell; a second cavity is formed between the second shell and the cover body; the first cavity is internally provided with two ferrite gyromagnetic sleeve sheets and a central conductor located between the two ferrite gyromagnetic sleeve sheets; a uniform magnetic sheet and a permanent magnet are sequentially arranged in the second cavity; the ferrite gyromagnetic sleeve sheet comprises a ferrite wafer and a heat conduction circular ring fixed on the edge of the ferrite wafer in a surrounding manner. The strip line circulator is low in loss, small in heating value, excellent in heat dissipation performance and high in reliability under high-power electromagnetic wave signals, and can well meet the high-power requirement of a TR assembly.