Microstrip thin-film resistor and waveguide power synthesis network thereof

A technology of microstrip film and resistors, applied in waveguide devices, circuits, electrical components, etc., can solve problems such as large insertion loss, limited application, and large power capacity

Pending Publication Date: 2020-10-30
成都玖信科技有限公司
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The microstrip synthesis network is small in size, but at mmWave frequency bands, the insertion loss becomes very large and the power capacity is limited
Radial combination has inherent advantages in multi-channel power combination, with small insertion loss and large power capacity, but the volume is very large, and its application in miniaturized devices is limited.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microstrip thin-film resistor and waveguide power synthesis network thereof
  • Microstrip thin-film resistor and waveguide power synthesis network thereof
  • Microstrip thin-film resistor and waveguide power synthesis network thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0038] See figure 1 with figure 2, in order to solve the problem of power synthesis and power amplifier miniaturization, the present embodiment provides a microstrip thin film resistor 100, which includes a ceramic substrate 110, a TaN resistor 120 and a microstrip probe 130 disposed on the ceramic substrate 110, and the TaN resistor 120 Proximate to the edge of the ceramic substrate 110 , the TaN resistor 120 is connected to a microstrip probe 130 extending to the opposite edge of the ceramic substrate 110 . The microstrip thin film resistor 100 is arranged at the center of the E-T section of the microwave and millimeter wave solid-state device. The ceramic substrate 110 is a microstrip substrate of a high thermal conductivity material. What the ceramic substrate 110 in this embodiment selects is an Al2O3 ceramic substrate. In other embodiments, the Al2O3 ceramic substrate is replaced with a microstrip of BeO or other high thermal conductivity material With a substrate, th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a microstrip thin-film resistor and a waveguide power synthesis network thereof, which can solve the problems of power synthesis and miniaturization of a power amplifier. The microstrip thin-film resistor comprises a ceramic substrate, a TaN resistor and a microstrip probe, the TaN resistor and the microstrip probe are arranged on the ceramic substrate, the TaN resistor clings to the edge of the ceramic substrate, the TaN resistor is connected with the microstrip probe, and the microstrip probe extends to the opposite edge of the ceramic substrate. The waveguide power synthesis network comprises a power distribution network, a power amplifier module and a power synthesis network, the power distribution network divides microwave signals into N paths of signals with the same amplitude and the same phase, each path of signals is amplified by the power amplifier module and then fed into the power synthesis network, and the microstrip thin-film resistor is arranged atthe joint of the power distribution network and the power synthesis network.

Description

technical field [0001] The invention relates to the field of multi-channel waveguide synthesis, in particular to a microstrip thin film resistor and a waveguide power synthesis network thereof. Background technique [0002] With the development of microwave and millimeter-wave solid-state devices, solid-state microwave and millimeter-wave high-power amplification technology has attracted widespread attention. Due to the limited output power capability of a single MMIC, it is difficult to meet the requirements of engineering applications. Power combining technology is the most important and effective way to obtain high-power solid-state microwave and millimeter wave sources. The performance of power distribution / synthesis technology directly affects the energy distribution and synthesis efficiency of the entire system. The most commonly used synthesis methods in the industry include microstrip synthesis, radial synthesis, and waveguide synthesis. [0003] Microstrip synthes...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01P5/08H01P5/107H01P5/12
CPCH01P5/08H01P5/107H01P5/12
Inventor 曾华
Owner 成都玖信科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap