The invention discloses a waveguide coupling type separate absorption and multiplication avalanche diode, which relates to the field of semiconductor photoelectric devices and the field of optical interconnection. The waveguide coupling type separate absorption and multiplication avalanche diode comprises a p plus type ohmic contact electrode, a p plus type ohmic contact layer, an absorption layer, a p type charge region, a multiplication region, an n plus type ohmic contact electrode, an n plus type ohmic contact region, an insulated burial layer, a substrate and a single-mode waveguide; the waveguide coupling type separate absorption and multiplication avalanche diode is characterized that the p type charge region is positioned at the tail end of the single-mode waveguide, the absorption layer is positioned at the top part of the p type charge region, the multiplication region and the n plus type ohmic contact region are coplanar with the single-mode waveguide and are tightly close to the p type charge region to be sequentially arranged, stretching directions of the p type charge region, the multiplication region and the n plus type ohmic contact region are vertical to a light transmission direction of the single-mode waveguide, and the p type charge region, the multiplication region and the n plus type ohmic contact region are in the same thickness with the single-mode waveguide. According to the waveguide coupling type separate absorption and multiplication avalanche diode disclosed by the invention, the optical coupling efficiency is increased by a device by utilizing the coupling of the single-mode waveguide while the separate absorption and multiplication is realized, a disturbance phenomenon of electric signals of double multiplication regions is avoided, the size of the device can be reduced to nanometer size, the transition time and the dark current can be reduced, and the sensitivity is increased.