Waveguide coupling type separate absorption and multiplication avalanche diode

Abstract

The invention discloses a waveguide coupling type separate absorption and multiplication avalanche diode, which relates to the field of semiconductor photoelectric devices and the field of optical interconnection. The waveguide coupling type separate absorption and multiplication avalanche diode comprises a p plus type ohmic contact electrode, a p plus type ohmic contact layer, an absorption layer, a p type charge region, a multiplication region, an n plus type ohmic contact electrode, an n plus type ohmic contact region, an insulated burial layer, a substrate and a single-mode waveguide; the waveguide coupling type separate absorption and multiplication avalanche diode is characterized that the p type charge region is positioned at the tail end of the single-mode waveguide, the absorption layer is positioned at the top part of the p type charge region, the multiplication region and the n plus type ohmic contact region are coplanar with the single-mode waveguide and are tightly close to the p type charge region to be sequentially arranged, stretching directions of the p type charge region, the multiplication region and the n plus type ohmic contact region are vertical to a light transmission direction of the single-mode waveguide, and the p type charge region, the multiplication region and the n plus type ohmic contact region are in the same thickness with the single-mode waveguide. According to the waveguide coupling type separate absorption and multiplication avalanche diode disclosed by the invention, the optical coupling efficiency is increased by a device by utilizing the coupling of the single-mode waveguide while the separate absorption and multiplication is realized, a disturbance phenomenon of electric signals of double multiplication regions is avoided, the size of the device can be reduced to nanometer size, the transition time and the dark current can be reduced, and the sensitivity is increased.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices and the field of optical interconnection, in particular to a waveguide absorption multiplication separation type avalanche diode capable of detecting weak communication optical signals. Background technique [0002] Avalanche photodetector (APD) is an important branch of photodetector research that uses the avalanche multiplication effect to achieve photocurrent multiplication inside the device. The device has higher sensitivity and photoresponse, and is mainly used for the detection of weak light signals, especially The application of high-loss big data transmission technologies such as wavelength division multiplexing and time division multiplexing has made the sensitivity requirements of the optical receiving end higher and higher. Therefore, the avalanche photodetector is an important research direction in the field of optical communication and optical switching. [0003] A...

AI Technical Summary

Problems solved by technology

However, the waveguide absorption multiplication separation type avalanche detectors currently researched are still unable to achieve industrial integration with high sensitivity and large bandwidth.

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