17 results about "Millimeter wave circuits" patented technology

The invention discloses a low-loss vertical transmission transition structure, belongs to the technical field of microwave and millimeter wave circuits, and solves the problem of impedance mismatch in a signal transmission process of an SIP (Session Initiation Protocol) packaging device. A packaging substrate of the SIP packaging device is provided with a non-standard rectangular waveguide, a ball planting type waveguide structure constructed by using the idea that wide and narrow sides of the waveguide are slotted at the same time, a two-order waveguide cavity formed in a multi-layer printed board and a standard rectangular waveguide cavity in a metal waveguide are concentrically arranged from top to bottom; a vertical transmission transition structure is formed by the planting ball type waveguide structure and the two-order waveguide cavity and is used for realizing bidirectional low-loss transition transmission of signals; according to the invention, efficient vertical transmission of signals among the SIP packaging device, the multi-layer printed board and the metal waveguide is realized, the advantages of low transmission loss, simple structure and easy integration are realized, and key technical support is provided for wide application of W-band and terahertz-band SIP devices.

The invention provides a parametric modeling method and device for a silicon-based millimeter wave on-chip component, and belongs to the technical field of integrated circuit modeling and millimeter wave circuit design. The method comprises the following steps: under a preset key parameter interpolation node, acquiring a transmission parameter of a de-embedding test structural member comprising a de-embedded component at each test frequency point; removing a parasitic effect embedded in the test structural member by using transmission matrix operation so as to obtain a transmission matrix of the de-embedded component and obtain a scattering parameter of the de-embedded component; then, through a vector fitting algorithm, obtaining a pole-residue model of the de-embedded component under the parameter interpolation node; and based on the pole-residue model under each parameter interpolation node, establishing a parameterized de-embedding model of the de-embedded component through a gravity center interpolation algorithm. According to the method, rapid and accurate modeling of silicon-based millimeter wave on-chip components of any size can be realized, and the reliability and efficiency of millimeter wave integrated circuit design are improved.

Aspects described herein include a first antenna array disposed on a first surface of a first substrate in a first plane, where the first antenna array comprises a plurality of antenna elements in a first configuration and a second antenna array disposed on a second substrate in a second plane, where the second plane is different than and nonparallel with the first plane, one or more solder bump connections disposed on the first substrate, a millimeter wave (mmW) circuitry connected to the one or more solder bump connections, and a connector physically coupling the second substrate to the first substrate, wherein the mmW circuitry is coupled via the one or more solder bump connections to the first antenna array, the connector, and the second antenna array.

The invention discloses a high-frequency airtight microstrip waveguide power conversion device, which is characterized in that a whole multi-layer ceramic is connected with a metal carrier with a cavity, the integrated structure can realize airtightness at one time, and compared with a sapphire waveguide sealing window structure in the prior art, the high-frequency airtight microstrip waveguide power conversion device is more convenient in structure and simpler in process flow. On the basis of a copper-based LTCC material, the dielectric loss is relatively small, and the dielectric loss is reduced by adopting a multilayer dielectric double-sided slotting mode, so that relatively low insertion loss is realized, local airtightness of an active device is realized, the size of the whole device is reduced, the device is more suitable for being used in a millimeter wave circuit, and the reliability of the device is improved.

This invention belongs to the field of antenna technology in wireless communication, specifically relating to a novel SIW broadband millimeter-wave circularly polarized rectangular loop antenna, comprising two dielectric substrates and three metal layers, which, from top to bottom, are a first metal layer, an upper dielectric substrate, a second metal layer, a lower dielectric substrate, and a third metal layer; the upper dielectric substrate has metallized vias; the first metal layer, the upper dielectric substrate, and the second metal layer together constitute a first structure; the third metal layer and the lower dielectric substrate form a second structure for enabling the antenna to generate unidirectional radiation; the first structure includes a radiating element, which comprises two rectangular loop pairs, each of which achieves a 90° phase delay; this invention uses sequential rotation technology as its design concept, employing a rectangular loop structure with broadband characteristics to improve the antenna's operating bandwidth and gain; the use of SIW feeding not only reduces the antenna's profile height but also facilitates integration into millimeter-wave circuits.

Aspects described herein include a first antenna array disposed on a first surface of a first substrate in a first plane, where the first antenna array comprises a plurality of antenna elements in a first configuration and a second antenna array disposed on a second substrate in a second plane, where the second plane is different than and nonparallel with the first plane, one or more solder bump connections disposed on the first substrate, a millimeter wave (mmW) circuitry connected to the one or more solder bump connections, and a connector physically coupling the second substrate to the first substrate, wherein the mmW circuitry is coupled via the one or more solder bump connections to the first antenna array, the connector, and the second antenna array.

The invention relates to the field of microwave and millimeter wave circuits, and provides a topological structure of a multi-frequency-point adjustable notch equalizer with a filtering characteristic, which comprises a plurality of adjustable notch equalization units connected in parallel, each adjustable notch equalization unit comprises a first resistor, a first inductor and a first adjustable capacitor which are connected in series; and a converter is connected between every two adjustable trapped wave equalization units. According to the invention, a plurality of independent and adjustable trapped wave equalization frequency points can be realized, and a good standing wave is ensured at the same time. On the basis, the topological structure has a filtering characteristic with adjustable passband frequency.

A millimeter wave circuit structure and a millimeter wave module measure equipment are provided, and the millimeter wave circuit structure includes a substrate, two metal through hole groups, a signal feed-in structure, a signal feed-out structure, two slot structures and a metal shielding cover. Each of the metal through hole groups penetrates the substrate. The signal feed-in structure and the signal feed-out structure are provided inside the substrate and located between the two metal through hole groups. The two slot structures are provided on the substrate and respectively connected to the signal feed-in structure and the signal feed-out structure. The metal shielding cover is connected to the substrate and shields the two slot structures.

This invention discloses a uniformly distributed radiation energy structure for a millimeter-wave antenna, comprising a transmitting array antenna and / or a receiving array antenna composed of at least one comb-shaped antenna assembly; the comb-shaped antenna assembly includes an elongated antenna body and a microstrip line radiating assembly, one end of the antenna body being connectable to a millimeter-wave circuit capable of generating millimeter waves, and the microstrip line radiating assembly comprising multiple intermediate microstrip line radiating elements spaced apart in the middle section of the antenna body, and an end microstrip line radiating element located at the tail end of the antenna body, wherein the area of ​​the intermediate microstrip line radiating elements gradually increases from one end close to the millimeter-wave circuit toward the other end, so that the distribution of the radiated energy of each intermediate microstrip line radiating element approaches an average.

The invention relates to the technical field of microwave and millimeter wave circuits, and discloses an LTCC-based strip line-to-substrate integrated waveguide transition structure, which comprises a top metal layer, a strip line substrate, a middle metal layer, a substrate integrated waveguide substrate and a bottom metal layer which are sequentially stacked from top to bottom. A strip line conductor and a matching patch are arranged in the strip line substrate, and a coupling slot is formed in the middle metal layer. According to the invention, the metalized coupling probe which vertically extends downwards is arranged in the center of the matching patch, so that the metalized coupling probe passes through the coupling slot and extends into the substrate integrated waveguide, and efficient vertical coupling of electromagnetic energy is realized. The coupling slotted hole is preferably in the shape of a lock hole, so that the process tolerance is improved. According to the invention, the LTCC multi-layer technology is used for integrated manufacturing, the structure is compact, the W wave band (75110 GHz) is operated, the advantages of wide frequency band, low insertion loss, high integration level and good technology compatibility are realized, and the LTCC multi-layer microwave filter is suitable for high-frequency millimeter wave communication and radar systems.

The invention provides a radio frequency temperature compensation attenuation circuit only for a receiving circuit and a TR assembly, and relates to the technical field of millimeter wave circuit design. The radio frequency temperature compensation attenuation circuit comprises a radio frequency transmission line, a temperature attenuation compensation unit and a conduction control unit. The radio frequency transmission line is used for transmitting radio frequency signals of the receiving link and the transmitting link. The temperature attenuation compensation unit is connected in series between the radio frequency input end and the radio frequency output end, and temperature attenuation compensation is only carried out on a receiving link signal. The conduction control unit is connected in parallel to two ends of the temperature attenuation compensation unit, is realized by adopting a PIN diode, and is in short circuit with the temperature attenuation compensation unit when a transmitting link works to ensure that a transmitting signal is not influenced by attenuation; and when the receiving link works, the signal is subjected to temperature compensation through the temperature attenuation compensation unit. Through accurate temperature compensation and flexible conduction control, the transmitting output power and the receiving signal stability of the TR assembly are remarkably improved.

The invention provides a double-balanced mixer, and relates to the technical field of microwave and millimeter wave circuits. The double-balanced mixer comprises a radio frequency plane balun, a local oscillator plane balun, an FET annular mixing core, a first FET tube and a second FET tube, the input end of the local oscillator plane balun is used for receiving a local oscillator signal, and the two output ends of the local oscillator plane balun are connected with the drain electrode of an FET tube in the FET annular mixing core; the input end of the radio frequency plane balun is used for receiving a radio frequency input signal, two output ends of the radio frequency plane balun are respectively connected with the grid electrodes of the first FET tube and the second FET tube, the source electrodes of the first FET tube and the second FET tube are grounded, and the drain electrodes of the first FET tube and the second FET tube are connected with the source electrodes of the FET tubes in the FET annular mixing core; and the drain electrode of the FET tube in the FET annular mixing core is connected to the intermediate frequency signal output end. The problem that a current mixer based on the GaAs HEMT technology is difficult to have the characteristics of low power consumption and small size can be solved.

This invention discloses a CPWG transmission line for use in millimeter-wave MMIC circuits and its fabrication method. The CPWG transmission line for millimeter-wave MMIC circuits includes a substrate, a metal bonding layer on the substrate, a nitrogen-polarized GaN layer on the metal bonding layer, a coplanar waveguide signal line and a ground line on the nitrogen-polarized GaN layer. Ions are implanted into the nitrogen-polarized GaN layer, and conductive vias are formed in the ion-containing regions. The conductive vias are electrically connected to the metal bonding layer and the coplanar waveguide ground line, respectively. Each conductive via includes a through-hole penetrating the nitrogen-polarized GaN layer and a conductive material filling the via. By using vias to connect the coplanar waveguide ground line above the nitrogen-polarized GaN layer to the lower metal bonding layer, a grounded coplanar waveguide structure with vias is constructed, effectively eliminating the radio frequency loss of the metal bonding layer and shielding the underlying substrate, thereby reducing the loss of the CPWG transmission line in the nitrogen-polarized GaN millimeter-wave MMIC circuit.

The disclosure relates to mmWave RF (MMW) circuits made by methods of Additively Manufactured Electronics (AME). Specifically, the disclosure relates to reconfigurable and / or tunable RF and / or MMW circuits made by direct and / or indirect inkjet printing.

The invention relates to a vertical interconnection structure. The vertical interconnection structure comprises a first transmission line and a second transmission line which are arranged along a first direction. The first transmission line includes: a first package substrate having a first groove on one side in a first direction, the first groove extending in a second direction perpendicular to the first direction; the first boss is arranged at the groove bottom of the first groove in a protruding mode and extends in the second direction, and the side wall of the first boss and the side wall of the first groove are arranged in a spaced mode; the first conductive layer is arranged on the top surface of the first boss, and the first conductive layer is coupled or electrically connected with the second transmission line; the second conducting layer is at least arranged on the side wall of the first groove, and the second conducting layer and the first conducting layer are arranged in an insulated mode; the grounding plate is arranged on the side, provided with the first groove, of the first packaging substrate, the grounding plate and the first conductive layer are arranged in an insulated mode, the second conductive layer is electrically connected with the grounding plate, the transmission loss of the first transmission line is reduced, and the first transmission line can be conveniently integrated with a microwave and millimeter wave circuit to form a three-dimensional circuit structure.

The invention relates to a surface-mounted substrate integrated waveguide filter and a preparation method thereof. The surface-mounted substrate integrated waveguide filter comprises at least one substrate and at least one substrate integrated waveguide filter, the upper surface of each substrate is formed by sequentially arranging a first metal region, a second metal region and a third metal region along the y-axis direction; one end of each second metal area along the x-axis direction is provided with a radio frequency input section, and the other end of each second metal area along the x-axis direction is provided with a radio frequency output section; each substrate is provided with an insulating area; a plurality of conductive holes which are symmetrically distributed along the center line of the second metal region are formed in each first metal region and each third metal region at intervals; at least one substrate integrated waveguide filter is mounted on each substrate in each first metal area or each third metal area. The microwave millimeter wave filter can be widely applied to the field of microwave millimeter wave circuits.

The application discloses a rectangular waveguide filter, and the filter comprises a double-layer hollow waveguide, and four rectangular resonant cavities are formed by two hollow waveguides in each of upper and lower layers; adjacent hollow waveguides in the same layer are communicated through a first coupling hollow waveguide serving as a coupling window, so that the filter structure is more compact, the loss is lower, and the filter is more suitable for application in a modern microwave and millimeter wave circuit system; adjacent hollow waveguides in the upper and lower layers are communicated through a hollow rectangular waveguide, a hollow cylindrical waveguide, a third coupling hollow waveguide and a second coupling hollow waveguide serving as coupling windows; the coupling windows arranged in this way not only do not affect the coupling of the main mode TM 110 , but also can inhibit the coupling of high-order modes TM 210 , so that the effect of keeping high selectivity and extending the filter stopband is achieved.