8 results about "Millimeter wave circuits" patented technology

The invention provides a parametric modeling method and device for a silicon-based millimeter wave on-chip component, and belongs to the technical field of integrated circuit modeling and millimeter wave circuit design. The method comprises the following steps: under a preset key parameter interpolation node, acquiring a transmission parameter of a de-embedding test structural member comprising a de-embedded component at each test frequency point; removing a parasitic effect embedded in the test structural member by using transmission matrix operation so as to obtain a transmission matrix of the de-embedded component and obtain a scattering parameter of the de-embedded component; then, through a vector fitting algorithm, obtaining a pole-residue model of the de-embedded component under the parameter interpolation node; and based on the pole-residue model under each parameter interpolation node, establishing a parameterized de-embedding model of the de-embedded component through a gravity center interpolation algorithm. According to the method, rapid and accurate modeling of silicon-based millimeter wave on-chip components of any size can be realized, and the reliability and efficiency of millimeter wave integrated circuit design are improved.

The invention discloses a high-frequency airtight microstrip waveguide power conversion device, which is characterized in that a whole multi-layer ceramic is connected with a metal carrier with a cavity, the integrated structure can realize airtightness at one time, and compared with a sapphire waveguide sealing window structure in the prior art, the high-frequency airtight microstrip waveguide power conversion device is more convenient in structure and simpler in process flow. On the basis of a copper-based LTCC material, the dielectric loss is relatively small, and the dielectric loss is reduced by adopting a multilayer dielectric double-sided slotting mode, so that relatively low insertion loss is realized, local airtightness of an active device is realized, the size of the whole device is reduced, the device is more suitable for being used in a millimeter wave circuit, and the reliability of the device is improved.

This invention belongs to the field of antenna technology in wireless communication, specifically relating to a novel SIW broadband millimeter-wave circularly polarized rectangular loop antenna, comprising two dielectric substrates and three metal layers, which, from top to bottom, are a first metal layer, an upper dielectric substrate, a second metal layer, a lower dielectric substrate, and a third metal layer; the upper dielectric substrate has metallized vias; the first metal layer, the upper dielectric substrate, and the second metal layer together constitute a first structure; the third metal layer and the lower dielectric substrate form a second structure for enabling the antenna to generate unidirectional radiation; the first structure includes a radiating element, which comprises two rectangular loop pairs, each of which achieves a 90° phase delay; this invention uses sequential rotation technology as its design concept, employing a rectangular loop structure with broadband characteristics to improve the antenna's operating bandwidth and gain; the use of SIW feeding not only reduces the antenna's profile height but also facilitates integration into millimeter-wave circuits.

A millimeter wave circuit structure and a millimeter wave module measure equipment are provided, and the millimeter wave circuit structure includes a substrate, two metal through hole groups, a signal feed-in structure, a signal feed-out structure, two slot structures and a metal shielding cover. Each of the metal through hole groups penetrates the substrate. The signal feed-in structure and the signal feed-out structure are provided inside the substrate and located between the two metal through hole groups. The two slot structures are provided on the substrate and respectively connected to the signal feed-in structure and the signal feed-out structure. The metal shielding cover is connected to the substrate and shields the two slot structures.

This invention discloses a uniformly distributed radiation energy structure for a millimeter-wave antenna, comprising a transmitting array antenna and / or a receiving array antenna composed of at least one comb-shaped antenna assembly; the comb-shaped antenna assembly includes an elongated antenna body and a microstrip line radiating assembly, one end of the antenna body being connectable to a millimeter-wave circuit capable of generating millimeter waves, and the microstrip line radiating assembly comprising multiple intermediate microstrip line radiating elements spaced apart in the middle section of the antenna body, and an end microstrip line radiating element located at the tail end of the antenna body, wherein the area of ​​the intermediate microstrip line radiating elements gradually increases from one end close to the millimeter-wave circuit toward the other end, so that the distribution of the radiated energy of each intermediate microstrip line radiating element approaches an average.

The invention relates to the technical field of microwave and millimeter wave circuits, and discloses an LTCC-based strip line-to-substrate integrated waveguide transition structure, which comprises a top metal layer, a strip line substrate, a middle metal layer, a substrate integrated waveguide substrate and a bottom metal layer which are sequentially stacked from top to bottom. A strip line conductor and a matching patch are arranged in the strip line substrate, and a coupling slot is formed in the middle metal layer. According to the invention, the metalized coupling probe which vertically extends downwards is arranged in the center of the matching patch, so that the metalized coupling probe passes through the coupling slot and extends into the substrate integrated waveguide, and efficient vertical coupling of electromagnetic energy is realized. The coupling slotted hole is preferably in the shape of a lock hole, so that the process tolerance is improved. According to the invention, the LTCC multi-layer technology is used for integrated manufacturing, the structure is compact, the W wave band (75110 GHz) is operated, the advantages of wide frequency band, low insertion loss, high integration level and good technology compatibility are realized, and the LTCC multi-layer microwave filter is suitable for high-frequency millimeter wave communication and radar systems.

This invention discloses a CPWG transmission line for use in millimeter-wave MMIC circuits and its fabrication method. The CPWG transmission line for millimeter-wave MMIC circuits includes a substrate, a metal bonding layer on the substrate, a nitrogen-polarized GaN layer on the metal bonding layer, a coplanar waveguide signal line and a ground line on the nitrogen-polarized GaN layer. Ions are implanted into the nitrogen-polarized GaN layer, and conductive vias are formed in the ion-containing regions. The conductive vias are electrically connected to the metal bonding layer and the coplanar waveguide ground line, respectively. Each conductive via includes a through-hole penetrating the nitrogen-polarized GaN layer and a conductive material filling the via. By using vias to connect the coplanar waveguide ground line above the nitrogen-polarized GaN layer to the lower metal bonding layer, a grounded coplanar waveguide structure with vias is constructed, effectively eliminating the radio frequency loss of the metal bonding layer and shielding the underlying substrate, thereby reducing the loss of the CPWG transmission line in the nitrogen-polarized GaN millimeter-wave MMIC circuit.

The application discloses a rectangular waveguide filter, and the filter comprises a double-layer hollow waveguide, and four rectangular resonant cavities are formed by two hollow waveguides in each of upper and lower layers; adjacent hollow waveguides in the same layer are communicated through a first coupling hollow waveguide serving as a coupling window, so that the filter structure is more compact, the loss is lower, and the filter is more suitable for application in a modern microwave and millimeter wave circuit system; adjacent hollow waveguides in the upper and lower layers are communicated through a hollow rectangular waveguide, a hollow cylindrical waveguide, a third coupling hollow waveguide and a second coupling hollow waveguide serving as coupling windows; the coupling windows arranged in this way not only do not affect the coupling of the main mode TM 110 , but also can inhibit the coupling of high-order modes TM 210 , so that the effect of keeping high selectivity and extending the filter stopband is achieved.