Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Planar magic T based on substrate integration technology

A technology of substrate integration and planar magic, applied in the field of planar magic T, can solve the problems of limited application range, narrow working bandwidth, and difficult realization of broadband, and achieve the effect of compact structure, large working bandwidth and reduced processing difficulty

Inactive Publication Date: 2017-05-24
NANJING UNIV OF POSTS & TELECOMM
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The magic T can be used to form a microwave impedance bridge, a balanced mixer, a power divider, a summator, an antenna duplexer, a balanced phase detector, a frequency discriminator, a modulator, etc., but the traditional waveguide magic T is a three-dimensional structure , large volume, and because it is difficult to realize a broadband matching circuit, its working bandwidth is narrow, these defects greatly limit the scope of its application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Planar magic T based on substrate integration technology
  • Planar magic T based on substrate integration technology
  • Planar magic T based on substrate integration technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail:

[0027] Divide the square substrate integrated resonant cavity into four resonant units along the vertical lines of its four sides, one of the resonant units (that is, a quarter of the square substrate integrated resonant cavity) is shown as figure 1 shown. The square substrate integrated resonator consists of the top metal layer, the dielectric substrate (using Rogers 5880 dielectric plate, the dielectric constant is 2.2, and the thickness is 0.508 mm) and the bottom metal layer from top to bottom, which are evenly distributed on its two long sides with metallized vias.

[0028] by four such as figure 1 The resonant units shown (not exactly the same size) are cross-coupled into a square resonant cavity, and the electric walls of adjacent resonant units are coupled together through the inductive window. For convenience in actual processing, it can...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a planar magic T based on a substrate integration technology and belongs to the microwave technology field. In the invention, firstly, based on a quarter square substrate integration resonance cavity, a novel power divider is designed, and then, based on the power divider, a transmission characteristic from a microstrip line to a groove line is used to realize a novel planar magic T. The magic T is characterized in that a quarter square resonance cavity is taken as a basic resonance unit; windowing is adopted among the resonance cavities so as to realize coupling and energy transmission; four ports use a 50 ohm microstrip line structure; and a bottom layer metal layer etches the groove line so as to realize energy transmission from the microstrip line to the resonance cavities. The structure is designed to be simple, a work bandwidth is large, an electrical property is good, and compared to a traditional stereo and multilayer structure magic T, a single layer structure is more suitable for being applied to modern microwave millimeter wave circuit integration.

Description

technical field [0001] The invention relates to a planar magic T based on substrate integration technology, which belongs to the field of microwave technology. Background technique [0002] With the rapid development of modern technology, wireless communication technology is developing towards high speed, multi-band and large capacity. The four-port magic T is widely used in the field of microwave technology because it is easy to realize equal-power in-phase / reverse-phase power division. The magic T can be used to form a microwave impedance bridge, a balanced mixer, a power divider, a summator, an antenna duplexer, a balanced phase detector, a frequency discriminator, a modulator, etc., but the traditional waveguide magic T is a three-dimensional structure , large volume, and because it is difficult to realize a wideband matching circuit, its working bandwidth is narrow, and these defects greatly limit the scope of its application. [0003] The traditional slot line struct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01P5/20
CPCH01P5/20
Inventor 许锋杨玲
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com