Integrated millimeter wave tile type TR component
A millimeter-wave, tile-based technology, applied in radio wave measurement systems, radio wave reflection/re-radiation, and re-radiation utilization, can solve the problems of scattered layout, heavy weight, and low integration, and reduce the vertical size and weight, save mass production cost, and improve the effect of component integration
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Embodiment 1
[0034] This embodiment provides an integrated millimeter wave tile-type TR component, such as figure 1 Shown:
[0035] It includes a common input port, a power supply and control signal port, a control module, a millimeter wave circuit module, a transmission output port and a power supply module. In the power division integrated chip, one end of the common input port is used to access the millimeter wave transmission signal, and the other end is connected to the input end of the one-to-two power splitter, and the two output ends of the one-to-two power splitter are respectively connected to one Eight-point power divider, the output of each one-point-eight power divider is connected to a one-point four-power divider integrated chip, and a one-point four-power divider, VM phase shifter is integrated in each one-point four-power divider integrated chip and power amplifying circuit, the transmission channels of the four output terminals of the one-to-four power divider are connec...
Embodiment 2
[0040] As an optimization to the above-mentioned embodiment, the described one-to-four power-divider integrated chip adopts SOC chip 7, and a total of sixteen SOC chips 7, two one-to-eight power dividers and one-to-one are integrated on the high-frequency circuit board 5. Divide into two power dividers. The two output terminals of the one-to-two power divider are respectively connected with drive amplifier chips, which are used to drive and amplify the millimeter-wave transmission signal output by the one-to-two power divider, and drive and amplify the millimeter-wave transmission signal to meet the final stage output power requirements. The control module includes a DAC digital-to-analog conversion chip 8, four DAC digital-to-analog conversion chips 8 are integrated on the low-frequency control circuit board 4, and each DAC digital-to-analog conversion chip 8 corresponds to controlling a total of sixteen on the four SOC chips 7. a VM phase shifter.
[0041] Through chip-lev...
Embodiment 3
[0044] As an optimization of the above-mentioned embodiment, the sixteen SOC chips 7 can respectively select different power levels, so that the corresponding transmission output ports 12 output millimeter-wave transmission signals with different powers. According to different system equipment performance requirements and application environment conditions, mmWave tile-type TR components can achieve different single-channel transmission output powers by using SOC chips 7 of different power levels, such as 50mW, 100mW, 200mW, 400mW, etc.; for large Scale array requirements such as Figure 5 As shown, the standardized millimeter-wave tile-type transmitting components can be assembled according to the array layout, such as using 32 millimeter-wave tile-type TR components to build a phased array antenna with 2048 transmitting channels. According to different applications, the working frequency of millimeter-wave tile-type TR components is different, so that the channel spacing D t...
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