Bulk acoustic wave resonator

A technology of bulk acoustic wave resonators and acoustic mirrors, which is applied to electrical components, impedance networks, etc., and can solve problems such as the degradation of the quality factor of resonators and the degradation of filter performance

Active Publication Date: 2019-06-14
TIANJIN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the actual working state of the bulk wave resonator with the traditional structure, in addition to the vibration of the piston mode, a large number of spurious mode vibrations (clutter) will be generated, and the ex

Method used

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Embodiment Construction

[0038] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0039] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the descrip...

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Abstract

The invention provides a bulk acoustic wave resonator which comprises a substrate, an acoustic mirror structure, a lower electrode, a piezoelectric film structure and an upper electrode which are sequentially arranged from bottom to top. The upper surface and/or the lower surface of the upper electrode and/or the lower electrode are/is provided with an accessory structure, and the accessory structure is provided with protrusions or pits in the direction perpendicular to the surface of the upper electrode.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a bulk acoustic wave resonator. Background technique [0002] The traditional top view structure of BAW resonator is as follows figure 1 shown along the figure 1 The polyline AOA’ in the section can be obtained figure 2 The cross-sectional structure in figure 1 and figure 2 The basic structure of the bulk acoustic wave contained in includes the substrate SUB, the acoustic mirror structure AM embedded in the substrate, the lower electrode BE located on the substrate and the acoustic mirror, the piezoelectric film structure PZ located on the lower electrode and the substrate, and the piezoelectric film structure PZ located on the piezoelectric The upper electrode TE on the electric film. in figure 1 It also includes the lower electrode pin BEC and the upper electrode pin TEC, the two-part structure is in figure 2 not shown in [0003] The ideal working state of th...

Claims

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Application Information

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IPC IPC(8): H03H9/02H03H9/05
Inventor 杨清瑞庞慰孙晨张孟伦
Owner TIANJIN UNIV
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