Bulk acoustic wave resonator
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- TIANJIN UNIV
- Publication Date
- 2019-06-14
Smart Images
Figure 1 
Figure 2 
Figure 3
Abstract
Description
technical field
[0001] The invention relates to the technical field of semiconductors, in particular to a bulk acoustic wave resonator. Background technique
[0002] The traditional top view structure of BAW resonator is as follows figure 1 shown along the figure 1 The polyline AOA’ in the section can be obtained figure 2 The cross-sectional structure in figure 1 and figure 2 The basic structure of the bulk acoustic wave contained in includes the substrate SUB, the acoustic mirror structure AM embedded in the substrate, the lower electrode BE located on the substrate and the acoustic mirror, the piezoelectric film structure PZ located on the lower electrode and the substrate, and the piezoelectric film structure PZ located on the piezoelectric The upper electrode TE on the electric film. in figure 1 It also includes the lower electrode pin BEC and the upper electrode pin TEC, the two-part structure is in figure 2 not shown in
[0003] The ideal working state of th...