Dual-layer nanometer array-structure inverted ultraviolet LED and fabrication method thereof

A nano-array and nano-structure technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., to achieve the effect of increasing the light output power and reducing the limitation of light extraction efficiency

Active Publication Date: 2019-12-20
SUZHOU UVCANTEK CO LTD
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  • Claims
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Problems solved by technology

[0003] The object of the present invention is to provide a flip-chip UV LED with a double-layer nano-array structure and its preparation method, which is used to solve the problem in the prior art that the total reflection of ultraviolet light at the sapphire / air interface suppresses the light extraction efficiency

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  • Dual-layer nanometer array-structure inverted ultraviolet LED and fabrication method thereof
  • Dual-layer nanometer array-structure inverted ultraviolet LED and fabrication method thereof
  • Dual-layer nanometer array-structure inverted ultraviolet LED and fabrication method thereof

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Embodiment Construction

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0020] For the first solution proposed by the present invention, see figure 1 , figure 1 It is a structural schematic diagram of an embodiment of a flip-chip ultraviolet LED with a double-layer nano-array structure of the present invention. In the present invention, the flip-chip ultraviolet LED with a double-layer nano-array structure includes a support 1, an LED chip 2, an organic polymer layer 3 and a lens 4; the lens 4 is arranged on the top of the suppor...

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Abstract

The invention discloses a dual-layer nanometer array-structure inverted ultraviolet LED and a fabrication method thereof. The ultraviolet LED comprises a support, an LED chip, an organic polymer layerand a lens, wherein the lens is arranged at the top of the support, the LED chip and the organic polymer layer both are arranged in an enclosed space encircled by the support and the lens, the LED chip is arranged at the bottom of the support and comprises a sapphire layer with a first nanometer array structure, the sapphire layer is arranged at one side far away from the bottom of the support, the LED chip is coated with the organic polymer layer, and a second nanometer array structure is arranged at one side, far away from the sapphire layer, of the organic polymer layer. In the dual-layernanometer array structure comprising the high-transmittance organic polymer material and sapphire, vacuum is maintained between the organic polymer material and the sapphire, the limitation of ultraviolet light total reflection of a sapphire/air interface on light extraction efficiency is substantially reduced, so that the light giving-out power of an LED is remarkably improved.

Description

technical field [0001] The invention relates to the field of preparation of ultraviolet LEDs, in particular to a flip-chip ultraviolet LED with a double-layer nano-array structure and a preparation method thereof. Background technique [0002] At present, ultraviolet LEDs have been widely used in disinfection, sterilization, air purification, food preservation and other fields. In terms of the performance of ultraviolet LEDs, the existing ultraviolet LED devices still maintain a low level of light efficiency, usually less than 20% and changes with the wavelength, especially the limitation of light extraction efficiency. On the one hand, it is far from mature commercial blue light. There is still a large gap in the performance of LEDs. On the other hand, LEDs generate a lot of heat during use, which will affect their life and stability. For ultraviolet LEDs of different wavelengths, the limitation of light extraction efficiency is also different. Above the wavelength of 365 ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/58H01L33/22H01L33/00
CPCH01L33/44H01L33/58H01L33/22H01L33/0066H01L33/0075H01L2933/0025H01L33/60H01L33/0008H01L33/007H01L33/32
Inventor 陈谦张会雪戴江南陈长清
Owner SUZHOU UVCANTEK CO LTD
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