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Method for optimizing photonic crystal surface emitting laser

A technology for emitting lasers and photonic crystals, applied in the legal field, can solve problems such as low luminous efficiency, large threshold current, and mode leakage, and achieve the effects of simple preparation process, strong modulation characteristics, and high transmission speed

Inactive Publication Date: 2012-07-25
BEIJING UNIV OF TECH
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Problems solved by technology

At present, the performance of photonic crystal surface-emitting lasers is limited by factors such as excessive threshold current and low luminous efficiency, which are mainly due to the non-radiative coincidence caused by the etching damage of photonic crystals and the mode leakage and scattering loss caused by photonic crystal holes. etc., the most important of which is that the injection current area is too large and the high-priced mode lasing cannot be lased, and most of the energy is lost in other forms

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  • Method for optimizing photonic crystal surface emitting laser
  • Method for optimizing photonic crystal surface emitting laser
  • Method for optimizing photonic crystal surface emitting laser

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Embodiment Construction

[0020] In order to verify the design scheme, we used the following method to prepare the device. A structured epitaxial wafer is selected, and an oxidation-confined surface-emitting laser in which the oxidation hole 9 and the photonic crystal defect hole 13 meet the matching coupling conditions is prepared through a conventional semiconductor process. Cleavage, bonding, testing. It is found that the threshold current of the device is an order of magnitude lower than that of the device without matching coupling, and the single fundamental mode power is increased by 30% compared with the device without matching coupling. The feasibility of our scheme is verified.

[0021] (Take a single-hole defect with a wavelength of 850nm, a photonic crystal lattice period of 5 microns, a photonic crystal air hole diameter of 2.5 microns, and a seven-hole defect structure with a photonic crystal period of 2 microns and a photonic crystal air hole diameter of 1 micron as an example)

[0022]...

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Abstract

The invention relates to a method for optimizing photonic crystal surface emitting laser, belonging to the technical field of the semiconductor optoelectronics. In the method, an oxidized aperture and a photonic crystal defect aperture are horizontally matched and coupled on the basis of transverse coupling of an oxidation restricted type surface emitting laser and a two-dimensional photonic crystal. By the optimization of the relationship of the oxidized aperture and the photonic crystal defect aperture, the device whose oxidized aperture is greater than the photonic crystal defect aperture by one photonic crystal air hole diameter is prepared to allow the device to work in low threshold current, small series resistance and high single-mode output power state. According to the invention, the method can be applied to oxidation limit photonic crystal surface emitting lasers of different materials and cannot be influenced by the wavelength range.

Description

technical field [0001] The present invention relates to a new method for optimizing the performance of photonic crystal surface-emitting lasers, in particular a new method for longitudinal coupling matching between oxidation aperture and photonic crystal defect aperture based on oxidation-limited surface-emitting laser and two-dimensional photonic crystal transverse coupling, The method can be applied to oxidation-limited photonic crystal surface-emitting lasers of various types of materials, and belongs to the technical field of semiconductor optoelectronics. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) has the advantages of low threshold current, dynamic single longitudinal mode operation, small divergence angle, circularly symmetrical beam, high modulation bandwidth, easy two-dimensional integration, etc., and is widely used in optical communication, optical storage and optical display, etc. field. Common oxidation-limited vertical cavity ...

Claims

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Application Information

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IPC IPC(8): H01S5/183
Inventor 徐晨解意洋朱彦旭邓军毛明明魏思民曹田阚强王春霞陈弘达
Owner BEIJING UNIV OF TECH
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