217results about How to "Narrow line width" patented technology

An optical phase lock loop (OPLL) system is disclosed that includes a master external cavity laser (ECL), and a substantially identical slave ECL. The master and slave ECLs are fabricated using a planar semiconductor device with waveguide-integrated planar Bragg gratings (PBG). Both the master and slave ECLs have a narrow linewidth and a low frequency-noise. Each of the ECLs has their own controller-modulator circuits for thermal tuning or electrical tuning via direct modulation. A laser-select-logic (LSL) module receives and processes a filtered phase error signal from a loop filter coupled to an electronic PLL device, and directs the processed phase error signal to one or both of the master and slave controller-modulators according to a logical determination of a required mode of operation of the OPLL system in order to achieve a stable and identical phase performance of the master and the slave ECLs. The required mode of operation is chosen from a locking mode, a prediction mode, a tracking mode, and a searching mode.

A touch display panel including a first substrate, a touch sensing device, and a display medium layer is provided. The first substrate has a display area and a non-display area located outside the display area. The touch sensing device may be directly disposed on the first substrate and located within the non-display area, wherein the touch sensing device is consisted of two or more groups of receiving elements. The display medium layer is disposed in the display area.

In a laser based curing apparatus, the acts both as the curing light and the excitation source for a Raman spectroscopic sensor. The spectroscopic sensor provides real-time, in situ, non-invasive curing status monitoring via Raman spectroscopy. The spectroscopic information can be further used to control the operation parameters of the laser to achieve the optimum cure result.

The invention concerns a method for the hyperpolarisation of ¹³C nuclear spin in a diamond, comprising an optical pumping step, in which colour centre electron spins in the diamond are optically pumped. The method further comprises a transfer step in which the polarisation of a long-lived state of the colour centre electron spins is transferred to ¹³C nuclear spins in the diamond via a long-range interaction.

The invention provides a surface-emitting terahertz quantum cascade laser and a manufacturing method thereof. The laser comprises a single mode producing zone waveguide, a cone-shaped coupled zone waveguide and a surface-emitting zone waveguide, wherein the single mode producing zone waveguide and the cone-shaped coupled zone waveguide respectively adopt a first-order grating structure; the surface-emitting zone waveguide adopts a second-order grating structure; single mode terahertz seed light is produced in the single mode producing zone waveguide; the cone-shaped coupled zone waveguide is used for amplifying the terahertz seed light and coupling the terahertz seed light to the surface-emitting zone waveguide; and the surface-emitting zone waveguide enables the terahertz laser light to be exited vertical to the surface of a substrate. According to the surface-emitting terahertz quantum cascade laser, terahertz laser surface emitting with large power, narrow linewidth, small angle of divergence is realized, the laser emission of horizontal high-order mode is restrained to some extent, and the coupling loss and the end face loss between the waveguides are simultaneously reduced.

An illumination optical system has superior image formation capabilities, and can radiate a linear beam with excellent illumination uniformity and a narrow line width having a large aspect ratio; the illumination optical system comprises an afocal beam expander system which expands an beam illuminated from a laser light source; a linear beam-forming lens system having at least refractive power in a second direction which is substantially at a right angle to at least a first direction, the linear beam-forming lens system converting the beam, illuminated from said beam expander system, to a linear beam having its long side in said first direction; a lens array section having a plurality of element lenses, arranged along said first direction; and a condenser optical system which illuminates a processed face by reconnecting images of said linear beam from each of said element lenses thereon.

A widely tunable laser is described where a compound semiconductor gain chip is coupled to a waveguide filter fabricated on silicon. The filter has two resonators with different free-spectral-ranges, such that Vernier tuning between the filters can be used to provide a single wavelength of light feedback into the gain chip, where the wavelength is adjustable over a wide range. The coupling between the gain chip and the filter is realized through a microlens whose position can be adjusted using micromechanics and locked in place.

The present invention relates to external cavity laser (ECL) apparatuses and manufacturing processes, and more particularly to implementing low noise narrow bandwidth ECLs on planar lightwave circuit (PLC) platforms for harnessing high-performance, high-stability operation from a compact-footprint, low-power packaged device. An ECL device with narrow linewidth and low noise is disclosed, the device comprising a PLC device and a gain chip butt-coupled to each other. The PLC device has a planar Bragg grating (PBG) integrated onto a rectangular waveguide. The PLC device has anti-reflection coatings (ARC) on its input facet and output facet. The waveguide is designed to be selective of a single polarization. The gain chip has high-reflection coating (HRC) on a back facet and an ARC on a front facet. An operating wavelength of the ECL is aligned to a longer wavelength red slope of a reflectivity spectrum of the PBG. The operating wavelength may be tuned thermally, electrically, or thermo-electrically.

The invention provides a double-resonance, wide-tuning and narrow-linewidth all-solid-state nanosecond pulse medium-infrared optical parameter oscillator comprising four parts including single-frequency pump light, a double-resonance resonant cavity, an electrical control part and seed light. A 1.064 <mu>m single-frequency pulse laser pump quasi-phase matching multi-cycle polarized crystal double-resonance parameter oscillator is adopted to acquire dual-band laser output of wide-tuning range near-infrared signal light and medium-infrared idle light. The output central wavelength is tunable within the wide spectral range, and the cavity length is dynamically adjusted through electro-optical crystal by combining a single-frequency continuous semiconductor laser seed injection technology so as to realize narrow-linewidth laser output of the optical parameter oscillator. The oscillator can be widely applied to the field of high-resolution laser spectroscopy, laser radar, laser remote sensing, environmental detection, optical-electro countermeasure and laser medicine.

An optical characterization device has a guiding body and a diffractive structure integrated with it. The guiding body delivers radiation to the diffractive structure at a preselected angle and the diffractive structure diffracts at least a portion of radiation guided to it to give spatial resolution according to wavelength. A position sensitive detector detects the position of the spatially resolved radiation and thus the radiation can be characterized according to wavelength. Embodiments can be used to monitor and adjust the wavelength of a radiation source, using a feedback connection. By using the integrated approach, a very small structure can be realized and the structure can be relatively simply fabricated and assembled. The guiding body might be either capable of supporting multimode propagation of the radiation or might be a single mode waveguide. Where it is capable of supporting multimode propagation, an input to the guiding body acts to select a mode for propagation of the radiation.

The invention relates to a Raman spectra measuring device for multi-wavelength laser frequency shift excitation. The Raman spectra measuring device comprises at least two semiconductor lasers used for generating lasers with fixed wavelengths, at least two laser control modules used for controlling parameters of the lasers, a fiber-optical switch used for switching light sources of the semiconductor lasers, a Raman probe used for carrying out focusing excitation on a sample to be detected and collecting Raman optical signals generated by the sample, a sample cell used for placing the sample to be detected, a grating splitting module used for dividing the Raman optical signals on space, a spectral data acquisition module used for carrying out photoelectric conversion on the Raman optical signals and an arithmetic processing module used for analyzing and extracting Raman spectra. The Raman spectra measuring device is capable of overcoming the disadvantages of the common tunable laser of instability, complex device or the like, effectively inhibiting fluorescence interference and realizing Raman spectra detection under strong fluorescence background.

A narrow line width optical parametric oscillator (OPO) (10) is used a pump for a tunable optical parametric oscillator to enable it to produce a mid and long wavelength IR output over a wide 5-20 micron bandwidth. The pumping OPO (10) is then set up to be non-colinearly phase matched. To enable the pumping OPO (10) to exhibit the narrow line width, it is seeded with a narrow line width seeding source. The result is output energy having an extremely narrow 4 nanometer line width. The narrowness of the pumping OPO (10) output is derived first by using noncolinear phase matching in the pumping OPO (10) and secondly by using seeding in the pumping of the pumping OPO (10).

The invention is a device and measuring method for using Brillouin optical fiber circle laser to measure linewidth of ultra-narrow laser, which relates to a measuring device and method for laser linewidth. The output of the laser source is connected to the input of the isolator, the output of the isolator is connected to the input of the fiber coupler, the output of the coupler is connected to the inlet of the fiber coupler, the output of the fiber coupler is connected to the input of the photoelectric diode, the output of the photoelectric diode is connected to the input of the frequency spectrum analyzer, the fiber circular cavity is formed by connection one end of the aperture circle made up of unimodular fiber and the port of the fiber coupler, another end of the aperture circle is connected to the port three of the coupler. The method is: the laser needed to be measured is sent into the fiber circle cavity, when the power of the laser needed to be measured reach the threshold of SBS, it generates a first order Stokes light in the coupler, when the power of the first order stokes light reach the SBS threshold, it generates the second order stokes light in the coupler, then the second order stokes light and the laser needed to be measured frequency are analyzed by the frequency spectrum analyzer, and the linewidth can be acquired.

Provided is a microwave-signal generating method and device based on the excited brillouin scattering effect and the optical frequency comb in high nonlinear fibers. The invention belongs to the technical field of microwave photonics. The device comprises a tunable laser, a first coupler, a second coupler, a first circulator, a second circulator, a first high nonlinear fiber, an attenuator, a fourth coupler, a first photoelectric detector, a power divider, an intensity modulator, a fourth DC voltage regulator, a first double parallel mach-zehnder modulator, a fifth DC voltage regulator, a sixth DC voltage regulator, a seventh DC voltage regulator, a third circulator, a second high nonlinear fiber, a third coupler, a second photoelectric detector, a microwave amplifier, a second double parallel mach-zehnder modulator, a first DC voltage regulator, a second DC voltage regulator, a third DC voltage regulator, an isolator, a fifth coupler, a third photoelectric detector and a frequency analyzer. Due to the advantages of mode selection and positive feedback of a photoelectric oscillator, the microwave signals which are output by the device have the advantages of good spectrum purity and low noises.

The invention discloses a two-dimensional topological photonic crystal cavity, a design method thereof, and application in a laser. The two-dimensional topological photonic crystal cavity comprises aplurality of photonic crystal supercells that have a vortex-type structure change around the cavity center of the two-dimensional topological photonic crystal cavity, and the energy band of the plurality of photonic crystal supercells has a Dirac point at the equilibrium position where the vortex-type structure changes. The two-dimensional topological photonic crystal cavity, also known as a Diracvortex cavity, has the characteristics such as large mode field area, large free spectral range, narrow beam divergence angle, degeneracy of any mode and compatibility with a variety of substrate materials, and can be applied to surface emitting semiconductor lasers to ensure that the laser can still work stably in both single transverse mode and single longitudinal mode when outputting at largearea and high energy.

The invention relates to an array type outer cavity adjustable laser adopting passive waveguide gratings. The array type outer cavity adjustable laser comprises a monomode optical waveguide grating array unit, a second light beam collimation lens, a micro electro mechanical system (MEMS) optical reflector, a first light beam collimation lens, a semiconductor optical amplifier, a laser output assembly and a monomode tail fiber in sequence, wherein the monomode optical waveguide grating array unit provides a plurality of narrow-band high-reflectivity ports with specific wavelengths; the rotatable MEMS optical reflector is used for selecting optical paths connecting between the semiconductor optical amplifier and the narrow-band high-reflectivity ports with the specific wavelengths and realizing the lasing of the laser output assembly under the specific wavelengths; the semiconductor optical amplifier is used for providing resonant cavity gain; the first light beam collimation lens and the second light beam collimation lens are used for realizing the transformation of light beams inside a cavity; and the laser output assembly is used for realizing the reverse isolation of output light and the extraction of output optical signals and outputting the output optical signals to the monomode tail fiber in a coupling way. The invention can realize narrower line widths, larger wavelength covering range, the cooperative control of cavity lengths and centre wavelengths and the selection of multiple resonance wavelengths.

The invention provides a frequency stabilizing device of a semiconductor laser and an adjusting method thereof. The frequency stabilizing device consists of the semiconductor layer, a quarter wave plate, an atomic absorption basin, a half-transparent and half-reflecting mirror, a photoelectric prober, an oscilloscope, an ordinary optical glass and a signal generator. According to the invention, based on the combination of an atomic saturated absorption spectroscopy technology and an incoherent feedback frequency stabilization technology, an output frequency of the semiconductor laser is stabilized at an atomic saturated absorption peak. Therefore, the narrow line width pressure and the stable frequency of the semiconductor laser can be realized simultaneously. The frequency stabilizing device has the characteristics of simple structure and high frequency stability.

The invention provides an 852nm ultra-narrow line width external-cavity semiconductor laser, which comprises an 852nm laser gain chip, a collimating lens, a rotatable wedge prism pair, a cube beam splitter, a rotatable all-dielectric thin-film fabry-perot light filter, a totally reflecting mirror and a piezoelectric actuator, wherein the collimating lens, the rotatable wedge prism pair, the cube beam splitter, the rotatable all-dielectric thin-film fabry-perot light filter, the totally reflecting mirror and the piezoelectric actuator are sequentially arranged in a light exiting direction of the gain chip; the collimating lens collimates a laser beam and then reflects the laser beam into an external cavity body; the wedge prism pair rotates around an optical axis, so that an incident beam which positively enters the vertical surface of a prism lens deflects; the cube beam splitter outputs one part of light and the other part of light is left in the cavity for oscillation; the fabry-perot light filter can rotate to achieve the target of mode selection for the external cavity; and the totally reflecting mirror can move along the normal direction by combination of the totally reflecting mirror and a PZT. The external-cavity laser can greatly reduce the influence on the frequency caused by mechanical vibration; the mode-hop phenomenon of the laser is avoided; and meanwhile, ultra-narrow line width and linear continuous and adjustable wavelength can be achieved.

A high-power, tunable and narrow linewidth external cavity semiconductor laser belongs to the technical field of a semiconductor laser and aims to solve the problem that the comprehensive requirements such as mode characteristic, beam quality, linewidth, coherence and tunability of a single laser are difficult to be met. The high-power, tunable and narrow linewidth external cavity semiconductor laser is formed by directly coupling a gain chip, a tunable external cavity and an inclined power amplifier with a curved waveguide through an end surface, wherein the gain chip is used for achieving laser output of single-mode wide spectrum; the tunable external cavity adopts a silicon on insulator (SOI) material; the linewidth is narrowed by increasing cavity length and a quality factor Q of a laser resonant cavity; the tunability is achieved by the adoption of refractive index of a thermal modulation material; and by the arrangement of the inclined power amplifier with curved waveguide, laser output with high power and high beam quality is achieved under ensuring the stability of the gain chip and the tunable external cavity. By the high-power, tunable and narrow linewidth external cavity semiconductor laser, a novel semiconductor laser integrating a single mode, high power, high beam quality, narrow linewidth, high coherence, tunable wavelength and the like is achieved, and the high-power, tunable and narrow linewidth external cavity semiconductor laser has important application prospect in the fields such as space laser communication and laser radar.

The invention provides a single-longitudinal-mode optical parametric oscillation amplifier which is extra narrow in bandwidth, ultra in frequency stabilization, tunable and efficient. An optical parameter laser is a solid laser pump injected with seed light, the oscillator stage is of an annular cavity structure design, continuous stable single-longitudinal-mode seed light is injected, and cavity length mode locking is automatically controlled through programs. The optical parameter laser can output single longitudinal mode lasers with the bandwidth smaller than 200MHz, the energy conversion efficiency is close to 40% to the maximum extent, and the output wave length can cover 430-3500nm (limited by the range of seed light wave length). Stabilization of the wave length of the laser and continuous scanning of wave lengths of the seed light within a limitation of non-mode-jump by controlling a self-feedback system through programs can be achieved.

The invention discloses a distribution feedback external cavity narrow line board semi-conductor laser for achieving frequency self-locking, which comprises a semi-conductor laser (a), a collimating lens (b), a polarizingprism (c), a first 1/4 wave plate (d), an F-P etalon (e), a second 1/4 wave plate (f), a front cavity reflector (g), an isolator (h), a focusing lens (f), and an optical fiber (j). The laser disclosed by the invention can effectively narrow the light width of a light source, and achieve the frequency self-locking of the external cavity semi-conductor laser.

This invention pertains to an optical device and method for using a chalcogenide glass waveguide to amplify a pump light beam by means of stimulated Raman scattering and obtaining a depleted pump light beam and an amplified beam at a wavelength higher than the wavelength of the depleted pump light beam.