852nm ultra-narrow line width external-cavity semiconductor laser

Abstract

The invention provides an 852nm ultra-narrow line width external-cavity semiconductor laser, which comprises an 852nm laser gain chip, a collimating lens, a rotatable wedge prism pair, a cube beam splitter, a rotatable all-dielectric thin-film fabry-perot light filter, a totally reflecting mirror and a piezoelectric actuator, wherein the collimating lens, the rotatable wedge prism pair, the cube beam splitter, the rotatable all-dielectric thin-film fabry-perot light filter, the totally reflecting mirror and the piezoelectric actuator are sequentially arranged in a light exiting direction of the gain chip; the collimating lens collimates a laser beam and then reflects the laser beam into an external cavity body; the wedge prism pair rotates around an optical axis, so that an incident beam which positively enters the vertical surface of a prism lens deflects; the cube beam splitter outputs one part of light and the other part of light is left in the cavity for oscillation; the fabry-perot light filter can rotate to achieve the target of mode selection for the external cavity; and the totally reflecting mirror can move along the normal direction by combination of the totally reflecting mirror and a PZT. The external-cavity laser can greatly reduce the influence on the frequency caused by mechanical vibration; the mode-hop phenomenon of the laser is avoided; and meanwhile, ultra-narrow line width and linear continuous and adjustable wavelength can be achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to an 852nm ultra-narrow linewidth external cavity semiconductor laser. Background technique [0002] Ultra-narrow linewidth external cavity semiconductor lasers are widely used in technical fields such as atomic physics, spectroscopy, quantum information, coherent communication, remote sensing and precision measurement, among which 852nm ultra-narrow linewidth external cavity semiconductor lasers are mainly used in ultra-high precision Atomic clocks, short-range communications and other fields. Currently, there are two most common external cavity structures: grating external cavity and Fabry-Perot interference filter external cavity. In the grating-type external cavity laser, the grating acts as a mode selector and a mirror at the same time. Although its structure is simple, it is difficult to align the external cavity, and the grating is very sensitive to vibration, ...

AI Technical Summary

Problems solved by technology

In a grating-type external cavity laser, the grating acts as a mode selector and a mirror at the same time. Although its structure is simple, it is difficult to align the external cavity, and the grating is very sensitive to vibration, which is not conducive to the frequency stabilization of the laser.

However, for external cavity lasers based on Fabry-Perot interference filters, the mode selector and mirror are separate components, and the sensitivity of the external cavity to vibration is relatively small.

However, most Fabry-Perot interference filter-type external cavity lasers use kinematic supports to adjust the positions of optical components such as interference filters and mirrors in the external cavity. The positions and angles of filters and mirrors, which not only complicate the alignment of the external cavity optical path, but also introduce mechanical vibrations, seriously affect the frequency stability and linewidth of the external cavity laser

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