High-power, tunable and narrow linewidth external cavity semiconductor laser

Abstract

A high-power, tunable and narrow linewidth external cavity semiconductor laser belongs to the technical field of a semiconductor laser and aims to solve the problem that the comprehensive requirements such as mode characteristic, beam quality, linewidth, coherence and tunability of a single laser are difficult to be met. The high-power, tunable and narrow linewidth external cavity semiconductor laser is formed by directly coupling a gain chip, a tunable external cavity and an inclined power amplifier with a curved waveguide through an end surface, wherein the gain chip is used for achieving laser output of single-mode wide spectrum; the tunable external cavity adopts a silicon on insulator (SOI) material; the linewidth is narrowed by increasing cavity length and a quality factor Q of a laser resonant cavity; the tunability is achieved by the adoption of refractive index of a thermal modulation material; and by the arrangement of the inclined power amplifier with curved waveguide, laser output with high power and high beam quality is achieved under ensuring the stability of the gain chip and the tunable external cavity. By the high-power, tunable and narrow linewidth external cavity semiconductor laser, a novel semiconductor laser integrating a single mode, high power, high beam quality, narrow linewidth, high coherence, tunable wavelength and the like is achieved, and the high-power, tunable and narrow linewidth external cavity semiconductor laser has important application prospect in the fields such as space laser communication and laser radar.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to a high-power tunable narrow-linewidth external-cavity semiconductor laser. Background technique [0002] Traditional semiconductor lasers are widely used in optical communication, optical information storage, 3D laser printing, optical measurement, solid-state laser pump source, laser molecular spectroscopy and other fields. However, due to the characteristics of line width, beam quality, brightness, and tuning ability of a single laser, it cannot be used in high-speed, high-precision and long-distance space laser communication, basic atomic clocks, lidar, quantum information science, precision spectrum measurement and other fields. . Therefore, in order to meet the above applications, it is necessary to prepare a new type of semiconductor laser that integrates single-mode, high power, high beam quality, narrow linewidth, high coherence, and wavelength tunability. ...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems existing in the prior art, the present invention provides a high-power tunable narrow-linewidth external-cavity semiconductor laser, which solves the problem that existing lasers are difficult to meet single-mode, high-power, high-beam-quality, narrow-linewidth, High coherence, wavelength tunable problem

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