Grid electrode enhanced surface plasmon laser and preparation method thereof

A surface plasmon, laser technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problem that the size cannot break through the optical diffraction limit.

Active Publication Date: 2021-09-28
NANJING UNIV
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Problems solved by technology

However, the size of the above-mentioned lasers cannot break through the limitation of the optical ...

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  • Grid electrode enhanced surface plasmon laser and preparation method thereof
  • Grid electrode enhanced surface plasmon laser and preparation method thereof
  • Grid electrode enhanced surface plasmon laser and preparation method thereof

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Embodiment 1

[0050] Embodiment 1 A grid electrode enhanced surface plasmon laser.

[0051] In this implementation case, silicon wafer 1 is selected as the substrate material, and the specific preparation method of a grid electrode-enhanced surface plasmon laser is as follows:

[0052] (1) if figure 1 As shown, a layer of SiO with a thickness of 200 nm was evaporated on a silicon wafer 1 by using plasma enhanced chemical vapor deposition (PECVD) technology. 2 Insulation layer 2, PECVD grown SiO 2 The way is to pass 5% SiH into the reaction chamber 4 / N 2 and N 2 The mixed gas of O, the flow rates are 100sccm and 450sccm respectively, under the condition of pressure 300mTorr, power 10W, temperature 350℃, through SiH x +O→SiO 2 (+H 2 ) reaction to deposit SiO on the epitaxial wafer surface 2 , the time is 9 minutes and 40 seconds;

[0053] (2) if figure 2 As shown, in the first insulating layer SiO 2 A silver (Ag) metal layer 3 with a thickness of 80 nm is deposited on the surface...

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Abstract

The invention discloses a grid electrode enhanced surface plasmon laser. The laser comprises a surface plasmon substrate, a multi-quantum well nanowire and a grid-shaped electrode. According to the grid electrode enhanced surface plasmon laser, the grid-shaped electrode is used for implementing electromagnetic field stimulation on a nanometer structure, meanwhile, plasmons and excitons in a gain medium can form resonance coupling, so that stimulated radiation of photons in the gain medium is achieved, and the enhanced surface plasmon nanometer laser is successfully obtained. According to the core principle of the laser,electromagnetic field stimulation is carried out on carriers in a nano optical cavity by adopting the grid-shaped electrode, so that light in the nano optical cavity is enhanced to generate high-efficiency excitation, the threshold value of the surface plasmon laser is reduced, 0.8 W/cm < 2 > low-threshold lasing at room temperature is realized, and the quality factor Q value of the laser is improved. The device is characterized in that the grid-shaped electrode is not in contact with the nano optical cavity, the problem of electric leakage is effectively avoided while electromagnetic field loading is implemented, and the limitation of optical diffraction limit can be broken through in one dimension.

Description

technical field [0001] The invention relates to a grid-shaped electrode-enhanced surface plasmon laser structure and a preparation method thereof, belonging to the field of laser technology. Background technique [0002] Since its inception, lasers have been widely used in industrial, medical, military and other fields. In recent years, laser technology and applications have developed rapidly, and have been combined with multiple disciplines to form multiple application technology fields. [0003] Such as optoelectronic technology, laser medical treatment and photon biology. However, the size of the above-mentioned lasers cannot break through the limitation of the optical diffraction limit, and further exploration is needed to achieve ultra-small size and ultra-low threshold. In 2003, Bergman and Stockman first proposed the basic concept of plasmon amplification of stimulated radiation at the subwavelength scale. In 2009, Professor Zhang Xiang's research group realized pla...

Claims

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Application Information

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IPC IPC(8): H01S5/042H01S5/34
CPCH01S5/04254H01S5/04252H01S5/341
Inventor 陶涛苗涛蒋迪智婷刘斌
Owner NANJING UNIV
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