35results about How to "Improve quality factor Q value" patented technology

The invention provides a magnesium-zinc soft magnetic ferrite. The magnesium-zinc soft magnetic ferrite comprises main ingredients and accessory ingredients, wherein the main ingredients comprise the following components in percentage by weight: 68.92 to 70.59 percent of ferric oxide, 16.03 to 18.52 percent of zinc oxide, 8.07 to 9.83 percent of magnesium oxide and 3.62 to 3.86 percent of copper oxide; and the accessory ingredients comprise the following components in percentage by weight: 0.1 to 0.3 percent of bismuth trioxide and 0.1 to 0.3 percent of vanadium pentoxide. The invention also relates to a method for preparing the magnesium-zinc soft magnetic ferrite. The performance of the material is close to that of a nickel-zinc soft magnetic ferrite, the loss of the magnesium-zinc soft magnetic ferrite is low when the magnesium-zinc soft magnetic ferrite is used at high frequency, and the cost is relatively lower.

A high-power, tunable and narrow linewidth external cavity semiconductor laser belongs to the technical field of a semiconductor laser and aims to solve the problem that the comprehensive requirements such as mode characteristic, beam quality, linewidth, coherence and tunability of a single laser are difficult to be met. The high-power, tunable and narrow linewidth external cavity semiconductor laser is formed by directly coupling a gain chip, a tunable external cavity and an inclined power amplifier with a curved waveguide through an end surface, wherein the gain chip is used for achieving laser output of single-mode wide spectrum; the tunable external cavity adopts a silicon on insulator (SOI) material; the linewidth is narrowed by increasing cavity length and a quality factor Q of a laser resonant cavity; the tunability is achieved by the adoption of refractive index of a thermal modulation material; and by the arrangement of the inclined power amplifier with curved waveguide, laser output with high power and high beam quality is achieved under ensuring the stability of the gain chip and the tunable external cavity. By the high-power, tunable and narrow linewidth external cavity semiconductor laser, a novel semiconductor laser integrating a single mode, high power, high beam quality, narrow linewidth, high coherence, tunable wavelength and the like is achieved, and the high-power, tunable and narrow linewidth external cavity semiconductor laser has important application prospect in the fields such as space laser communication and laser radar.

The invention discloses a plane spiral inductor; the width of a lead wire of the plane spiral inductor is gradually increased from interior to exterior, the distance between the lead wires is gradually reduced from an inner ring to an outer ring; compared with the inductor with the traditional structure, eddy effect and proximity effect of the plane spiral inductor are reduced at high frequency, the series resistance of inductor coil lead wires is reduced, so as to improve the quality factor Q value of the inductor on the premise of not changing the domain area and the size of inner diameter; a preparation process of the plane spiral inductor is compatible to the conventional CMOS process, and the performance of an important functional unit at the CMOS radio-frequency front end can be improved.

The invention relates to a high-sensitivity resonant optic gyro, and particularly relates to a double-resonant cavity resonant optic gyro which comprises an isolation collimation chip tunable light source Laser, a first coupler C1, a multifunctional integrated optic modulator, a third coupler C3, a second coupler C2, a fourth coupler C4, a main resonant cavity, a first photoelectric detector PD1, a first lock-in amplifier LIA1, a second photoelectric detector PD2, a second lock-in amplifier LIA2, and a feedback control circuit FBC, and also comprises a circular auxiliary resonant cavity with an ohmic contact disposed at the central position, a temperature control module and a fifth coupler C5; an output port is disposed at a position opposite to an input port on the main resonant cavity; an input end of the fifth coupler C5 contacts the output port of the main resonant cavity; an output end of the fifth coupler C5 contacts an input port of the auxiliary resonant cavity; the temperature control module is connected with the ohmic contact through wires made by MEMS technology; and the invention solves the problem of low sensitivity of optic gyros.

The invention discloses an organic-substrate-based passive radio capacitive humidity sensor packaging structure, which comprises a humidity sensitive capacitor, an organic packaging substrate, a planar spiral inductor, a back connecting wire, an external connection pad, an internal connection pad, a sealing cover, an upper covering layer and a lower covering layer, wherein the humidity sensitive capacitor and the planar spiral inductor are respectively and fixedly connected to the top surface of the organic packaging substrate; one end of the back connecting wire is connected with an external port of the planar spiral inductor, and the other end of the back connecting wire is connected with the external connection pad which is connected with one electrode of the humidity sensitive capacitor; an internal connecting wire of the planar spiral inductor is connected with the internal connection pad which is connected with the other electrode of the humidity sensitive capacitor; and the sealing cover is fixedly connected onto the organic packaging substrate through an adhesive layer. The humidity sensor packaging structure consists of the wireless passive elements and has the performance advantages of no contact, small size and low power consumption.

The invention relates to the technical field of semiconductor devices, relating to a method for improving the quality of a metal-intermediate-metal (MIM) capacitor, applied to the manufacturing process of semiconductor passive components, comprising the steps of: 1. on a substrate, photoetching a bottom pole plate pattern; 2. in turn evaporating Ti/Au to form the capacitor bottom pole plate; 3. depositing an intermediate layer; 4. making an air bridge; 5. photoetching a top pole plate pattern, and plating to form the top pole plate. The method is simple, low cost and very good repeatability and the properties of the obtained capacitor devices are largely improved as compared with those of the traditional process.

The invention provides a piezoelectric resonator. The piezoelectric resonator comprises a bottom electrode; a piezoelectric layer is stacked on the bottom electrode; a top electrode is stacked on the side, away from the bottom electrode, of the piezoelectric layer; a sound wave reflecting layer structure is formed on the side, away from the piezoelectric layer, of the bottom electrode; a top electrode leading-out structure is positioned on one side, far away from the bottom electrode, of the piezoelectric layer; the bottom electrode, the piezoelectric layer, the top electrode and the sound wave reflecting layer structure are overlapped together to form a space region which is defined as a resonance region; the top electrode leading-out structure is connected with the top electrode in the resonance area and extends out of the resonance area from the inside of the resonance area, and the top electrode leading-out structure and the orthographic projection part of the top electrode towards the piezoelectric layer are overlapped. The invention further provides a manufacturing method of the piezoelectric resonator. Compared with the prior art, the manufacturing method of the piezoelectric resonator can reduce the influence of the growth defect of the piezoelectric layer on the performance of the device, so that the piezoelectric resonator structure has a higher quality factor Q and a higher effective electromechanical coupling coefficient.

The invention discloses a non-fully-convex dioctahedral transformer Balun which comprises an encircled pattern formed by encircling a primary winding and a secondary winding at a certain interval, wherein the encircled pattern has a dioctahedral structure; and sixteen angles include eight convex outer angles and eight concave inner angles which are arranged close to one another. The transformer Balun has a novel structure, small chip area, high resonant frequency and high primary and secondary inductance. High resonant frequency and high primary and secondary inductance can be provided on a system on a chip, the transformer Balun can be manufactured under the processing conditions of a BiCMOS (Bipolar-Complementary Metal-Oxide-Semiconductor Transistor) and a CMOS (Complementary Metal-Oxide-Semiconductor Transistor), high quality factor, high resonant frequency and high primary and secondary inductance are realized, and only small ship area is consumed.

A dielectric ceramic material comprising titanium dioxide and cobalt oxychloride, and a method of preparing the same are provided. The dielectric ceramic material has a higher quality factor Q value and higher compactness, and the temperature during heating and sintering is also lowered. The temperature coefficient of the resonant frequency of the material can be effectively improved by containingtitanium dioxide and cobalt oxychloride.

The invention relates to an electronic piano sound box device, which is characterized by comprising a long groove body formed by splicing three long plates which are a lower crosspiece front plate, a lower crosspiece panel and a lower crosspiece rear plate; wherein two ends of the groove body are provided with edge supporting plates; the middle part of the groove body is provided with two middle supporting plates; a pedal set is connected between the two middle supporting plates; and two cover plates are arranged to respectively close a space formed by the edge supporting plates at the left and the right sides of the groove body, the middle supporting plates and the groove body so as to form two symmetrical sound box cavities which take the pedal set as the center. A certain inclined angle is formed between the lower crosspiece panel and the horizontal plane; the two ends of the lower crosspiece panel are symmetrically provided with loudspeaker holes and phase reversing holes; loudspeakers are respectively arranged on the loudspeaker holes on the lower crosspiece panel corresponding to the two sound box cavities; a short partition and a long partition are arranged to divide a phase reversing pipe in each loudspeaker cavity; and the phase reversing holes are communicated with the sound box cavities through the phase reversing pipe. Compared with the prior art, the electronic piano sound box device is novel and practical, and is capable of improving the loudspeaker effect and extending the function of the electronic piano as the active sound box.

The invention discloses a graphene surface acoustic wave filter device and a preparation method thereof. The graphene surface acoustic wave filter device comprises a piezoelectric substrate, a catalytic metal electrode layer and a graphene layer, wherein the piezoelectric substrate, the catalytic metal electrode layer and the graphene layer are sequentially arranged from bottom to top, and the graphene layer and the catalytic metal electrode layer jointly form a graphene interdigital electrode. The preparation method comprises the following steps: (1) cleaning the piezoelectric substrate; (2) preparing the catalytic metal electrode layer on the piezoelectric substrate in a graphical manner; and (3) growing graphene on the catalytic metal electrode layer to form the graphene interdigital electrode. According to the invention, the graphene/metal layer is prepared by adopting the method of combining chemical vapor deposition and metal layer catalytic cracking, so that thickness of the catalytic metal electrode layer and graphene growth temperature can be remarkably reduced, the graphene interdigital electrode and the piezoelectric substrate have stronger binding force, and the quality of the graphene and the performance of the surface acoustic wave filter device can be obviously improved.

The invention relates to the technical field of varactor circuits, and discloses a low-phase noise varactor circuit, which comprises two capacitors and two resistors, the two capacitors and the two resistors are connected in series, the two resistors are positioned between the two capacitors, a plurality of first variable capacitors are connected in parallel between the two resistors, and a plurality of second variable capacitors are connected in parallel between the two resistors. The two common end nodes are located between the capacitor and the resistor, a plurality of second variable capacitors are connected to the two common end nodes in parallel, and the first variable capacitor and the second variable capacitors are the same in gain but opposite in polarity. According to the invention, the first variable capacitor and the second variable capacitor with the same gain and opposite polarity are selected and connected to the resistor in the same way, so that the phase noise generated by the thermal noise of the resistor through the first variable capacitor at a certain moment can be exactly counteracted by the phase noise generated by the second variable capacitor; and the resistance can select a larger value to improve the quality factor Q value.

The invention discloses a grid electrode enhanced surface plasmon laser. The laser comprises a surface plasmon substrate, a multi-quantum well nanowire and a grid-shaped electrode. According to the grid electrode enhanced surface plasmon laser, the grid-shaped electrode is used for implementing electromagnetic field stimulation on a nanometer structure, meanwhile, plasmons and excitons in a gain medium can form resonance coupling, so that stimulated radiation of photons in the gain medium is achieved, and the enhanced surface plasmon nanometer laser is successfully obtained. According to the core principle of the laser,electromagnetic field stimulation is carried out on carriers in a nano optical cavity by adopting the grid-shaped electrode, so that light in the nano optical cavity is enhanced to generate high-efficiency excitation, the threshold value of the surface plasmon laser is reduced, 0.8 W/cm < 2 > low-threshold lasing at room temperature is realized, and the quality factor Q value of the laser is improved. The device is characterized in that the grid-shaped electrode is not in contact with the nano optical cavity, the problem of electric leakage is effectively avoided while electromagnetic field loading is implemented, and the limitation of optical diffraction limit can be broken through in one dimension.