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A kind of dielectric ceramic material and preparation method thereof

A technology of dielectric ceramics and ceramic powders, applied in the direction of ceramics, inorganic insulators, etc., can solve problems such as difficult densification, low density, and loose ion arrangement

Active Publication Date: 2021-09-14
ANHUI TATFOOK TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the long-term research and development process, the inventor of the present application found that Y 2 Ba(Cu 1-x Mg x )O 5 The quality factor Q value of ceramic materials is low (quality factor Q value is less than 4000GHz); AWO 4 Ceramic materials due to AWO 4 It is difficult to densify, so that the density is not high; Al 2 o 3 Al in ceramic materials 2 o 3 The higher the content (90% ~ 99%), the better its overall performance, the higher the required sintering temperature, up to 1600 ° C; the main crystal phase of cordierite ceramic material is 2MgO 2Al 2 o 3 ·5SiO2 2 , the ions of this material are not tightly arranged, and there are large gaps in the crystal lattice, so it is not easy to be dense, and the dielectric loss is large; the talc ceramic material is based on natural talc (3MgO 4SiO 2 ·H 2 O) is made of raw materials, and its layered structure leads to poor thermal stability

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  • A kind of dielectric ceramic material and preparation method thereof
  • A kind of dielectric ceramic material and preparation method thereof
  • A kind of dielectric ceramic material and preparation method thereof

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preparation example Construction

[0038] see image 3 , image 3 A schematic flow chart of an embodiment of the method for preparing a dielectric ceramic material of the present invention. The preparation method of the dielectric ceramic material in this embodiment includes:

[0039] Step S101, performing the first high-energy ball milling on the starting materials of magnesium oxide and silicon dioxide with a purity of more than 99.9% to obtain nanopowder;

[0040] Among them, [2MgO+(1+x)SiO 2 ] The mass percentage in the dielectric ceramic material is not less than 75%, further, [2MgO+(1+x)SiO 2 ] in the range of 75%-95% by mass, such as 75%, 85% or 95, etc., wherein the molar ratio of magnesium oxide to silicon dioxide is 2: (1+x), wherein, 0≤x≤0.2, For example, the value of x is 0.5, 1, 1.5, etc.

[0041] The particle size d50 of the nano-powder after the first high-energy ball milling is distributed within the range of 50-400nm. Further, the d50 of the nano-powder is distributed within the range of 5...

Embodiment 1

[0070] The raw material ratio expression of the present embodiment is: [2MgO+(1+0.05)SiO 2 ]+5wt%TiO 2 +0.25wt% CoO, using magnesium oxide, silicon dioxide, titanium dioxide, and cobaltous oxide with a purity of more than 99% as the main raw materials, through the following steps.

[0071] 1. Using magnesium oxide and silicon dioxide with a purity of more than 99% as the starting powder, according to the expression 2MgO+(1+0.05)SiO 2 After the required mole percentage is weighed, zirconia balls and deionized water are added into the ball milling medium, and mixed mechanically, and dried after mixing to obtain a dry powder. Wherein, the weight ratio of starting powder, ball milling medium and deionized water is 1:1.5:2, and the mixing time is 4 hours.

[0072]2. The dry powder obtained in step 1 is subjected to high-energy ball milling for the first time to obtain nanometer powder. Among them, the ball-to-material ratio is 5:1, the rotating speed is 550 rpm, the ball milling...

Embodiment 2

[0078] The raw material ratio expression of the present embodiment is: [2MgO+(1+0.1)SiO 2 ]+8wt%TiO 2 +0.4wt% CoO, using magnesium oxide, silicon dioxide, titanium dioxide, and cobaltous oxide with a purity of more than 99% as the main raw materials, through the following steps.

[0079] 1. Using magnesium oxide and silicon dioxide with a purity of more than 99% as the starting powder, according to the expression 2MgO+(1+0.1)SiO 2 After the required mole percentage is weighed, zirconia balls and deionized water are added into the ball milling medium, and mixed mechanically, and dried after mixing to obtain a dry powder. Wherein, the weight ratio of starting powder, ball milling medium and deionized water is 1:1.5:2, and the mixing time is 4 hours.

[0080] 2. The dry powder obtained in step 1 is subjected to high-energy ball milling for the first time to obtain nanometer powder. Among them, the ball-to-material ratio is 6:1, the rotating speed is 600 rpm, the ball milling t...

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Abstract

A dielectric ceramic material and a preparation method thereof. The dielectric ceramic material contains titanium dioxide and cobaltous oxide. The quality factor Q value of the dielectric ceramic material is high, and the compactness is high. At the same time, the temperature during heating and sintering is also reduced; because it contains titanium dioxide and cobaltous oxide, the temperature coefficient of the resonant frequency of the material can be effectively improved.

Description

technical field [0001] The invention relates to the technical field of ceramic materials, in particular to a dielectric ceramic material and a preparation method thereof. Background technique [0002] Microwave dielectric ceramic materials are new functional electronic ceramic materials that are used as dielectric materials and perform one or more functions in the application of microwave frequency band circuits. They are the key basic materials of modern communication technology. With the rapid development of microwave communication, microwave communication systems urgently need high-performance microwave dielectric devices. At present, the frequency range of mobile communication is in the L-band. Although the corresponding microwave dielectric devices have been industrialized, when the frequency develops to high-end, such as the frequency of satellite TV receivers and highway toll systems are located in the C-band, the existing microwave dielectric The dielectric constant...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/04C04B35/622H01B3/12
CPCC04B35/04C04B35/622C04B2235/3232C04B2235/3275C04B2235/3418C04B2235/5445C04B2235/5454C04B2235/602C04B2235/656C04B2235/6567H01B3/12
Inventor 曾俊陆正武袁亮亮
Owner ANHUI TATFOOK TECH CO LTD
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