Graphene surface acoustic wave filter device and preparation method thereof

Abstract

The invention discloses a graphene surface acoustic wave filter device and a preparation method thereof. The graphene surface acoustic wave filter device comprises a piezoelectric substrate, a catalytic metal electrode layer and a graphene layer, wherein the piezoelectric substrate, the catalytic metal electrode layer and the graphene layer are sequentially arranged from bottom to top, and the graphene layer and the catalytic metal electrode layer jointly form a graphene interdigital electrode. The preparation method comprises the following steps: (1) cleaning the piezoelectric substrate; (2) preparing the catalytic metal electrode layer on the piezoelectric substrate in a graphical manner; and (3) growing graphene on the catalytic metal electrode layer to form the graphene interdigital electrode. According to the invention, the graphene / metal layer is prepared by adopting the method of combining chemical vapor deposition and metal layer catalytic cracking, so that thickness of the catalytic metal electrode layer and graphene growth temperature can be remarkably reduced, the graphene interdigital electrode and the piezoelectric substrate have stronger binding force, and the quality of the graphene and the performance of the surface acoustic wave filter device can be obviously improved.

Description

technical field [0001] The invention relates to the technical fields of communication and sensing, in particular to a graphene surface acoustic wave filter device and a preparation method thereof. Background technique [0002] Surface acoustic wave (SAW) devices have the advantages of miniaturization, high sensitivity, and high consistency, and have been widely used in radio frequency communications such as phased radar, satellite, mobile, and electronic countermeasures, as well as high-precision sensing such as temperature and pressure. The working frequency of the current SAW device is mainly determined by the width and thickness of the interdigital electrode and the sound velocity of the surface acoustic wave, while the thickness of the traditional metal interdigital electrode is usually about 100nm. In the high frequency mode, the mass loading effect and interface coupling effect will not be ignored. Therefore, it cannot meet the high-frequency application requirements. ...

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Problems solved by technology

The graphene / piezoelectric substrate interface obtained by this method has a small binding force, which will seriously affect the device performance

However, if the non-catalytic direct growth method on the piezoelectric substrate is used, in order to promote the cracking of the carbon source, the growth temperature needs to be increased to above 1400 degrees, which will inevitably introduce a series of new problems, such as graphene wrinkles, substrate surface roughness, pollutants, etc. increase etc.

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