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Non-fully-convex dioctahedral transformer Balun

A transformer and angle-shaped technology, applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of low quality factor Q value, achieve high quality factor, reduce chip area, and save chip area.

Active Publication Date: 2011-09-14
广州润芯信息技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with hexagons, octagons, etc., whose number of sides is increasing, its quality factor Q value is relatively low

Method used

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  • Non-fully-convex dioctahedral transformer Balun
  • Non-fully-convex dioctahedral transformer Balun
  • Non-fully-convex dioctahedral transformer Balun

Examples

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Embodiment Construction

[0018] Such as figure 2 As shown, the non-full-convex hexagonal transformer balun includes a surrounding pattern formed by the primary winding and the secondary winding spaced from each other. The surrounding pattern is hexagonal, and sixteen The corners are composed of eight convex outer corners and eight concave inner corners, and the outer corners and inner corners are adjacent to each other. The angle of the outer corner of the surrounding figure is 90 degrees, and the angle of the inner corner is 135 degrees. Among them, ports 1, 2, and 3 are the ports of the primary winding, 2 is the center tap, and 4 and 5 are the ports of the secondary winding. The primary and secondary windings are mainly based on the top layer metal of the current process. This is because the top layer metal is thicker than other layer metals, and the conductivity is also high, and its resistance value under DC and AC conditions is relatively small. , which is conducive to improving the quality fac...

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Abstract

The invention discloses a non-fully-convex dioctahedral transformer Balun which comprises an encircled pattern formed by encircling a primary winding and a secondary winding at a certain interval, wherein the encircled pattern has a dioctahedral structure; and sixteen angles include eight convex outer angles and eight concave inner angles which are arranged close to one another. The transformer Balun has a novel structure, small chip area, high resonant frequency and high primary and secondary inductance. High resonant frequency and high primary and secondary inductance can be provided on a system on a chip, the transformer Balun can be manufactured under the processing conditions of a BiCMOS (Bipolar-Complementary Metal-Oxide-Semiconductor Transistor) and a CMOS (Complementary Metal-Oxide-Semiconductor Transistor), high quality factor, high resonant frequency and high primary and secondary inductance are realized, and only small ship area is consumed.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, in particular to an on-chip transformer balun suitable for radio frequency integrated circuits. Background technique [0002] Currently, transformer baluns are widely used in RF system-on-chips. Both the transmitting and receiving parts of the radio frequency circuit need to use inductors and transformer baluns. Transformer baluns realize single-ended to double-ended signal coupling in low-noise amplifiers, mixers, and power amplifiers, and also improve the quality factor due to mutual inductance. and inductance value. However, when realizing the on-chip transformer balun, it is necessary to reduce the chip area and provide low transformer loss, as well as ensure effective signal transmission. Therefore, it is necessary to improve the structure of the balun and improve its performance. [0003] US Patent No. US20080042792 discloses a structure called "on-chip transformer balun". r...

Claims

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Application Information

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IPC IPC(8): H01L23/522
Inventor 张华斌李正平何思远
Owner 广州润芯信息技术有限公司
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