The invention discloses a manufacturing method of a three-dimensional
system chip based on an aluminum
nitride bonding structure and the three-dimensional
system chip, and belongs to the field of advanced packaging of semiconductors. The manufacturing method comprises the following steps: providing a mother
wafer, wherein the surface of the mother
wafer is provided with a mother core
metal electrode array; providing at least one sub-
core particle, wherein the surface of the sub-
core particle is provided with a sub-core
metal electrode array; forming an aluminum
nitride bonding layer in a non-
electrode interconnection area on the surface of the mother
wafer and / or the surfaces of the sub core particles; and stacking and aligning the sub-core particles and the mother wafer, and bonding through the aluminum
nitride bonding layer, so that the mother core
metal electrode array and the sub-core metal
electrode array are vertically interconnected. According to the invention, aluminum nitride is used as a bonding and filling medium, and has the characteristics of high insulativity and high
thermal conductivity, so that high-density and high-reliability electrical
interconnection is realized, an efficient heat dissipation channel is provided for the high-power-consumption core particles, and the technical problem that heat dissipation and insulation in traditional three-dimensional integration are difficult to collaboratively optimize is solved.