Method for enhancing metal-medium-metal structural capacity performance

Abstract

The invention relates to the technical field of semiconductor devices, relating to a method for improving the quality of a metal-intermediate-metal (MIM) capacitor, applied to the manufacturing process of semiconductor passive components, comprising the steps of: 1. on a substrate, photoetching a bottom pole plate pattern; 2. in turn evaporating Ti/Au to form the capacitor bottom pole plate; 3. depositing an intermediate layer; 4. making an air bridge; 5. photoetching a top pole plate pattern, and plating to form the top pole plate. The method is simple, low cost and very good repeatability and the properties of the obtained capacitor devices are largely improved as compared with those of the traditional process.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, and relates to a method for improving the quality of metal-medium-metal (MIM) capacitors in the manufacturing process of semiconductor passive components. New process methods formed in the process of devices and circuits. Background technique [0002] In Microwave Monolithic Integrated Circuit (MMIC), a large number of passive devices and active devices will be integrated on the same chip, which is one of the important signs that Microwave Monolithic Integrated Circuit (MMIC) is different from traditional integrated circuits. In microwave monolithic integrated circuit (MMIC) design, passive devices are often used in various sub-circuits such as matching networks, DC bias networks, phase conversion and filters, and the quality of capacitors in passive devices will directly affect It affects the reliability of the entire microwave monolithic integrated circuit (MMIC). In the microwa...

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Problems solved by technology

[0013] However, there are some defects in this method: first, a dielectric layer is directly deposited on the metal gold of the lower plate, because the adhesion between the gold and the dielectric is not good, which affects the surface condition of the metal lower plate, and the dielectric is directly deposited on the lower plate. Such a surface will affect the growth of the dielectric layer, thereby reducing the density of the dielectric, reducing the quality of the dielectric layer, resulting in a large leakage of the capacitor, a decrease in the quality factor Q value, and a low breakdown voltage.

Secondly, in order to improve the quality of capacitance, people generally use methods to improve the dielectric layer, such as thickening the dielectric layer and using different deposition methods, but thickening the dielectric layer will reduce the unit capacitance value and increase the chip area. The deposition dielectric method will greatly increase the cost of chip manufacturing and increase the complexity of the process

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